| Project/Area Number |
13305013
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
機械工作・生産工学
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| Research Institution | TOKYO METLOPOLITAN UNIVERSITY |
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Principal Investigator |
KAKUTA Akira (2003) TOKYO METLOPOLITAN UNIV., DEPT.OF MECHANICAL ENGINIERRING, RESERCH ASSOCIATE, 大学院・工学研究科, 助手 (60224359)
古川 勇二 (2001-2002) 東京都立大学, 工学研究科, 教授 (10087190)
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| Co-Investigator(Kenkyū-buntansha) |
YANG Ming TOKYO METLOPOLITAN UNIV., DEPT.OF MECHANICAL ENGINIERRING, ASSOCIATE PROFESSER, 大学院・工学研究科, 助教授 (90240142)
MASUDA Hideki TOKYO METLOPOLITAN UNIV., DEPT.OF APPLIED CHEMISTRY, PROFESSER, 大学院・工学研究科, 教授 (90190363)
OKUMURA Tugunori TOKYO METLOPOLITAN UNIV., DEPT.OF ELECTRICAL ENGINIERRING, PROFESSER, 大学院・工学研究科, 教授 (00117699)
FURUKAWA Yuji TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY, FACULTY OF TECHNOLOGY, PROFESSER, 工学部, 教授 (10087190)
角田 陽 東京都立大学, 工学研究科, 助手 (60224359)
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| Project Period (FY) |
2001 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥47,060,000 (Direct Cost: ¥36,200,000、Indirect Cost: ¥10,860,000)
Fiscal Year 2003: ¥2,210,000 (Direct Cost: ¥1,700,000、Indirect Cost: ¥510,000)
Fiscal Year 2002: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2001: ¥41,080,000 (Direct Cost: ¥31,600,000、Indirect Cost: ¥9,480,000)
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| Keywords | mono crystal silicon / molecular beam epitaxy / nano-texture |
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| Research Abstract |
We have reported that free silicon molecules grew horizontally along a silicon substrate surface under a certain condition, so-called, a step-flow type growth, and could compose both a nano-meter order flatness and a perfect crystal structure by applying molecular Beam Epitaxy (MBE).
In this study, it is clarified that the above mentioned step-flow type growth of silicon molecules can be either constrained or changed its growing direction by such geometrical patterns as regularly positioned micro-holes and grooves which are pre-shaped on the surface of silicon substrate before epitaxial deposition processes. As a result, the surface of silicon substrate can be textured at a nano-meter order.
The mechanism of texturing is discussed in view of chemophysical deposition process and constriction of molecules under the step-flow depositing conditions. Micro steps are generated toward a certain orientation which is decided by a direction of substrate inclination and this growth is hindered by the pre-shaped pattern, hence, a square-like texture with a pitch of the pattern and a nano-meter order roughness inside of the texture patch is generated.
It is revealed that various types of textured surfaces can be obtained by combining the pre-shaped geometrical patterns and depositing conditions. These silicon nano-textures are expected to be used for micro-optomechatronic contacts, replica surface of LIGA process and etc.
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