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Single Electron Integrated Circuits Based on A BDD Architecture Utilizing Quantum Dots Controlled by Nano-Schottky Gates

Research Project

Project/Area Number 13305020
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

HASEGAWA Hideki  Hokkaido Univ., Graduate School of Eng., Prof., 大学院・工学研究科, 教授 (60001781)

Co-Investigator(Kenkyū-buntansha) AKAZAWA Masamichi  Hokkaido Univ., Res.Center For Integrated Quantum Electronics, Associate Prof., 量子集積エレクトロニクス研究センター, 助教授 (30212400)
HASHIZUME Tamotsu  Hokkaido Univ., Res.Center For Integrated Quantum Electronics, Associate Prof., 量子集積エレクトロニクス研究センター, 助教授 (80149898)
AMEMIYA Yoshihito  Hokkaido Univ., Graduate School of Eng., Prof., 大学院・工学研究科, 教授 (80250489)
KASAI Seiya  Hokkaido Univ., Graduate School of Eng., Associate Prof., 大学院・工学研究科, 助教授 (30312383)
Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥55,380,000 (Direct Cost: ¥42,600,000、Indirect Cost: ¥12,780,000)
Fiscal Year 2003: ¥10,660,000 (Direct Cost: ¥8,200,000、Indirect Cost: ¥2,460,000)
Fiscal Year 2002: ¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2001: ¥28,470,000 (Direct Cost: ¥21,900,000、Indirect Cost: ¥6,570,000)
KeywordsSingle Electron Circuit / Binary Decision Diagram (BDD) / Hexagonal BDD Quantum Circuit / Quantum Dots / Schottky Gate / Quantum Wire Network / Power-Delay Product / Quantum Transport / ヘキサゴナルBDD量子回路 / ショットキーゲート
Research Abstract

The purpose of this research was to investigate a novel single electron integrated circuit based on a binary-decision diagram (BDD) architecture utilizing quantum dots controlled by nano-Schottky gates. Main results are listed below :
(1)A novel "hexagonal BDD quantum circuit approach" for realization of quantum LSIs, in which the BDD architecture is implemented on hexagonal nanowire network in high dense, was proposed. Various logic subsystems and arithmetic logic units (ALUs) were successfully designed utilizing the novel circuit approach.
(2)Elemental BDD devices (node devices) were realized using GaAs-based etched nanowires controlled by Schottky wrap gates (WPGs). They showed clear path switching characteristics from low temperature to room temperature. Power-delay product (PDP) of WPG-controlled single electron node devices was found to be as small as 10^<-22> J. Capability of GHz operation of WPG switches was confirmed experimentally by direct measurement of cut-off frequency.
(3)B … More asic BDD logic circuits were fabricated on etched hexagonal nanowire networks controlled by WPGs and they operated correctly in a quantum regime at low temperature. They were found to be possible to operate correctly even at room temperature by trading off of PDP values. Then, high-density integrated circuit fabrication process realizing 45 million devices/cm^2 has been established. Utilizing this process, 2-bit BDD adder circuits were fabricated and their correct operations were confirmed, and 8-bit adder was also successfully fabricated.
(4)Formation of hexagonal quantum nanowire network structures by MBE selective growth on patterned substrates was investigated and ultra-high density network fabrication technology of 240 million nodes/cm^2 for GaAs-based systems and 1 giga nodes/cm^2 for InP-based systems have been established. Branch switches and node devices were successfully fabricated utilizing the selectively MBE grown nanowires and their correct operations were confirmed.
(5)For surface passivation of III-V semiconductor quantum nanostructures, a technique using ultra-thin Si and c-GaN interface control layers (ICLs) was investigated for III-V materials and optimized. It was found that GaAs surfaces was successfully passivated by preparation of Ga-rich (4×6) reconstructed surface as an initial surface for the ICL formation. Ultra-small minimum interface state density of 4×10^<10> cm^<-2>eV^<-1> was obtained in the SiO_2/GaAs interface. Less

Report

(4 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (261 results)

All Other

All Publications (261 results)

  • [Publications] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40. 2029-2032 (2001)

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      2003 Final Research Report Summary
  • [Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40. 2021-2025 (2001)

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      2003 Final Research Report Summary
  • [Publications] T.Muranaka: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Japanese Journal of Applied Physics. 40. 1874-1877 (2001)

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      2003 Final Research Report Summary
  • [Publications] F.Ishikawa: "Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40. 2769-2774 (2001)

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  • [Publications] Z.Jin: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40. 2757-2761 (2001)

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  • [Publications] C.Jiang: "Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate"Japanese Journal of Applied Physics. 40. 3003-3008 (2001)

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  • [Publications] H.Okada: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors"Japanese Journal of Applied Physics. 40. 2797-2800 (2001)

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  • [Publications] M.Miczek: "Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum"Vacuum. 63. 223-227 (2001)

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      2003 Final Research Report Summary
  • [Publications] T.Yoshida: "Realization of UHV-Compatible Defect-Free Hydrogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applied Surface Science. 175/176. 163-168 (2001)

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      2003 Final Research Report Summary
  • [Publications] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. 175/176. 181-186 (2001)

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  • [Publications] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors"Applied Surface Science. 175/176. 255-259 (2001)

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  • [Publications] Y.-G.Xie: "Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer"IEICE-C. E84-C 10. 1335-1343 (2001)

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  • [Publications] H.Takahashi: "Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer"IEICE-C. E84-C 10. 1344-1349 (2001)

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  • [Publications] T.Hashizume: "Surface passivation process for GaN-based electronic devices utilizing ECR-CVD SiN_x film"IEICE-C. E84-C 10. 1455-1461 (2001)

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  • [Publications] 謝永桂: "InP系高速デバイス用多層エピタキシャル構造のSi超薄膜による表面不活性化"電子情報通信学会論文誌C. J84-C. 872-882 (2001)

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  • [Publications] T.Yamada: "Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram"Japanese Journal of Applied Physics. 40. 4485-4488 (2001)

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  • [Publications] Y.G.Xie: "A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC- and RF-Performance"IEEE Electron Device Letter. 22. 312-314 (2001)

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  • [Publications] S.Anantathanasarn: "Surface passivation of GaAs using an ultrathin cubic GaN interface control layer"Journal of Vacuum Science & Technology B. 19. 1589-1596 (2001)

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  • [Publications] T.Hashizume: "Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostuctures"Journal of Vacuum Science & Technology B. 19. 1675-1681 (2001)

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  • [Publications] H.Hasegawa: "Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique"Materials Science & Engineering B. 80. 147-151 (2001)

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  • [Publications] T.Hashizume: "Surface characterization of GaN and AlGaN layers grown by MOVPE"Materials Science & Engineering B. 80. 309-312 (2001)

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  • [Publications] H.Hasegawa: "Quantum Devices and Integrated Circuits based on Quantum Confinement in III-V Nanowire Networks controlled by Nano-Schottky Gates"The Electrochemical Society Proceedings Volumes 2001-19 "Quantum Confinement : Nanostructured Materials and Devices". 189-208 (2001)

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  • [Publications] H.Hasegawa: "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires"Physica E. 11. 149-154 (2001)

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      2003 Final Research Report Summary
  • [Publications] S.Ootomo: "Surface passivation of AlGaN/GaN heterostructures using and ultrathin Al_2O_3 layer"Physica Status Solidi A. 188. 371-374 (2001)

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  • [Publications] H.Hasegawa: "Formation and Quantum Devices Applications of III-V Compound Semiconductor Nanostructures"Journal of the Korean Physical Society. 39. S402-S409 (2001)

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  • [Publications] M.Miczek: "Characterization of electronic properties of InP(100) surfaces from computer-aided analysis of photoluminescence"Optica Applicata. 32. 227-233 (2002)

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      2003 Final Research Report Summary
  • [Publications] T.Sato: "Selective MBE growth of GaAs/AlGaAs nanowires on patterned GaAs (001) substrates and its application to hexagonal nanowire network formation"Institute of Physics Conference Series. 170. 325-330 (2002)

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  • [Publications] F.Ishikawa: "Self-consistent computer analysis of cathodoluminescence in-depth spectra for compound semiconductor heterostructures"Institute of Physics Conference Series. 170. 461-466 (2002)

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      2003 Final Research Report Summary
  • [Publications] M.Konishi: "In-situ XPS and photoluminescence characterization of GaN surfaces grown by MBE on MOVPE GaN templates"Institute of Physics Conference Series. 170. 837-842 (2002)

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      2003 Final Research Report Summary
  • [Publications] Y.G.Xie: "Surface passivation of epitaxial multilayer structures for InP-based high-speed devices by an ultrathin silicon layer"Electronics and Communications in Japan, Part II-Electronics. 2-85. 17-28 (2002)

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      2003 Final Research Report Summary
  • [Publications] B.Adamowicz: "Rigorous analysis of photoluminescence efficiency for characterization of electronic properties of InP(100) surfaces"Vacuum. 67. 3-10 (2002)

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  • [Publications] M.Yumoto: "Graph-based quantum logic circuits and their realization by novel GaAs multiple quantum wire branch switches utilizing Schottky wrap gates"Microelectronic Engineering. 63. 287-291 (2002)

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  • [Publications] C.Jiang: "Molecular beam epitaxy growth mechanism and wire width control for formation of dense networks of narrow InGaAs quantum wires"Microelectronic Engineering. 63. 293-299 (2002)

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  • [Publications] S.Kasai: "A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon"IEEE Electron Device Letter. 23. 446-448 (2002)

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      2003 Final Research Report Summary
  • [Publications] M.Miczek: "Determination of InP surface state density distribution from excitation-power-dependent photoluminescence spectra using genetic algorithm-based fitting procedure"Surface Science. 507. 240-244 (2002)

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  • [Publications] S.Kasai: "III-V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks"Applied Surface Science. 190. 176-183 (2002)

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  • [Publications] A.Ito: "Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy"Applied Surface Science. 190. 231-235 (2002)

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  • [Publications] M.Yumoto: "Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures"Applied Surface Science. 190. 242-246 (2002)

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  • [Publications] N.Negoro: "Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4×4) surfaces"Applied Surface Science. 190. 269-274 (2002)

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  • [Publications] Z.Fu: "Gated photoluminescence study of oxide-free InP MIS structure having an ultrathin silicon interface control layer"Applied Surface Science. 190. 298-301 (2002)

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  • [Publications] S.Oyama: "Mechanism of current leakage through metal/n-GaN interfaces"Applied Surface Science. 190. 322-325 (2002)

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  • [Publications] S.Anantathanasarn: "Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer"Applied Surface Science. 190. 343-347 (2002)

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  • [Publications] Z.Jin: "Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride"Applied Surface Science. 190. 361-365 (2002)

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  • [Publications] F.Ishikawa: "Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces"Applied Surface Science. 190. 508-512 (2002)

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  • [Publications] Y.Nakano: "Strong photoluminescence and low surface state densities on clean and silicon deposited (001) surfaces of GaAs with (4×6) reconstruction"Japanese Journal of Applied Physics. 41. 2542-2547 (2002)

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  • [Publications] M.Yumoto: "Novel quantum wire branch-switches for binary decision diagram logic architecture utilizing Schottky wrap-gate control of GaAs/AlGaAs nanowires"Japanese Journal of Applied Physics. 41. 2671-2674 (2002)

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  • [Publications] M.Endo: "Reactive ion beam etching of GaN and AlGaN/GaN for nanostructure fabrication using methane-based gas mixtures"Japanese Journal of Applied Physics. 41. 2689-2693 (2002)

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  • [Publications] S.Kasai: "GaAs and InGaAs single electron hexagonal nanowire circuits based on binary decision diagram logic architecture"Physica E. 13. 925-929 (2002)

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  • [Publications] T.Muranaka: "Control of morphology and wire width in InGaAs ridge quantum wires grown by atomic hydrogen-assisted selective molecular beam epitaxy"Physica E. 13. 1185-1189 (2002)

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  • [Publications] S.Anantathanasarn: "Pinning-free GaAs MIS structures with Si interface control layers formed on (4×6) reconstructed (001) surface"Applied Surface Science. 216. 275-282 (2003)

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  • [Publications] F.Ishikawa: "Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures"Applied Surface Science. 212-213. 885-889 (2003)

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  • [Publications] S.Kasai: "Terahertz response of Schottky wrap gate-controlled quantum dots"Physica Status Solidi C. 0. 1329-1332 (2003)

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  • [Publications] H.Hasegawa: "Characterization and control of surfaces and interfaces for III-V nanoelectronics"Physica Status Solidi A. 195. 9-17 (2003)

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  • [Publications] M.Akazawa: "A UHV contactless capacitance-voltage characterization method applicable to semiconductor layers grown on insulating substrates"Physica Status Solidi A. 195. 248-254 (2003)

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  • [Publications] T.Kakumu: "Control of order parameter during growth of In_<0.5>Ga_<0.5>P/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine"Japanese Journal of Applied Physics. 42. 2230-2236 (2003)

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  • [Publications] H.Hasegawa: "Fabrication of AlGaN/GaN quantum nanostructures by methane-based dry etching and characterization of their electrical properties"Japanese Journal of Applied Physics. 42. 2375-2381 (2003)

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  • [Publications] S.Kasai: "Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach"Solid State Electronics. 47. 199-204 (2003)

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  • [Publications] A.Kameda: "Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs"Solid State Electronics. 47. 323-331 (2003)

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  • [Publications] T.Hashizume: "Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors"Journal of Vacuum Science & Technology B. 21. 1828-1838 (2003)

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  • [Publications] H.Hasegawa: "Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors"Journal of Vacuum Science & Technology B. 21. 1844-1855 (2003)

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  • [Publications] N.Negoro: "Effects of Si deposition on the properties of Ga-rich (4×6) GaAs (001) surfaces"Journal of Vacuum Science & Technology B. 21. 1945-1952 (2003)

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      2003 Final Research Report Summary
  • [Publications] H.Hasegawa: "Formation of III-V low dimensional structures and their applications to intelligent quantum chips"Microelectronics Journal. 34. 341-345 (2003)

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  • [Publications] T.Hashizume: "Al_2O_3-based surface passivation and insulated gate structure for AlGaN/GaN HFETs"Physica Status Solidi C. 0. 2380-2384 (2003)

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  • [Publications] F.Ishikawa: "Characterization of Recombination Processes in GaN by Cathodoluminescence In-Depth Spectroscopy"Physica Status Solidi C. 0. 2707-2711 (2003)

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  • [Publications] T.Hashizume: "Suppression of Current Collapse in Insulated Gate AlGaN/GaN Heterostructure Field-Effect Transistors Using Ultrathin Al_2O_3 Dielectric"Applied Physics Letter. 83. 2952-2954 (2003)

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  • [Publications] T.Sato: "Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism"Institute of Physics Conference Series. 174. 145-148 (2003)

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  • [Publications] H.Hasegawa: "Properties of Electronic States at Free Surfaces and Schottky Barrier Interfaces of AlGaN/GaN"Institute of Physics Conference Series. 174. 299-302 (2003)

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  • [Publications] I.Tamai: "Formation of High-Density GaAs Hexagonal Nano-Wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates"Physica E. (in press). (2004)

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  • [Publications] S.Yoshida: "Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates"Japanese Journal of Applied Physics. (in press). (2004)

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    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Sato: "Evolution Mechanism of Heterointerface Cross Section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy"Applied Surface Science. (in press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Hashizume: "Effects of Nitrogen Deficiency on Electronic Properties of AlGaN Surfaces Subjected to Thermal and Plasma Processes"Applied Surface Science. (in press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Iizuka: "Surface Plasma Wave Interactions between Semiconductor and Electromagnetic Space Harmonics from Microwave to THz Range"Thin Solid Films. (in press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Kotani: "Computer Simulation of Current Transport in GaN and AlGaN Schottky Diodes Based on Thin Surface Barrier Model"Applied Surface Science. (in press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] A.Manaf Hashim: "Plasma Wave Interactions in Microwave to THz Range between Carriers in Semiconductor 2DEG and Interdigital Slow Waves"Superlattice and Microstructures. (in press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Yumoto: "Fabrication of BDD Quantum Node Switches on Embedded GaAs Quantum Wires Grown by Selective MBE"Superlattice and Microstructures. (in press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] 長谷川英機: "応用物理ハンドブック第2版(第8章編著)"丸善株式会社. 1094 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Kasai, H.Hasegawa: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40. 2029-2032 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Sato, S.Kasai, H.Hasegawa: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40. 2021-2025 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Muranaka, C.Jiang, A.Ito, H.Hasegawa: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Japanese Journal of Applied Physics. 40. 1874-1877 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] F.Ishikawa, A.Hirama, H.Hasegawa: "Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40. 2769-2774 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Z.Jin, T.Hashizume, H.Hasegawa: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40. 2757-2761 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] C.Jiang, T.Muranaka, H.Hasegawa: "Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate"Japanese Journal of Applied Physics. 40. 3003-3008 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Okada, H.Hasegawa: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors"Japanese Journal of Applied Physics. 40. 2797-2800 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Miczek, B.Adamowicz, J.Szuber, H.Hasegawa: "Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum"Vacuum. 63. 223-227 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Yoshida, H.Hasegawa: "Realization of UHV-Compatible Defect-Free Hydrogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applied Surface Science. 175/176. 163-168 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Sato, S.Kasai, H.Hasegawa: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. 175/176. 181-186 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Kasai, N.Negoro, H.Hasegawa: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors"Applied Surface Science. 175/176. 255-259 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.-G.Xie, S.Kasai, H.Takahashi, C.Jiang, H.Hasegawa: "Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer"IEICE-C. E84-C 10. 1335-1343 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Takahashi, M.Yamada, Y.G.Xie, S.Kasai, H.Hasegawa: "Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer"IEICE-C. E84-C 10. 1344-1349 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Hashizume, R.Nakasaki, S.Ootomo, H.Hasegawa: "Surface passivation process for GaN-based electronic devices utilizing ECR-CVD SIN_x film"IEICE-C. E84-C 10. 1455-1461 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.-G.Xie, S.Kasai, H.Takahashi, C.Jiang, H.Hasegawa: "Surface passivation of epitaxial multilayer structures for InP-based high-speed devices by an ultrathin silicon layer (in Japanese)"IEICE-C. J84-C. 872-882 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Yamada, Y.Kinoshita, S.Kasai, H.Hasegawa, Y.Amemiya: "Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram"Japanese Journal of Applied Physics. Vol.40. 4485-4488 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.G.Xie, S.Kasai, H.Takahashi, C.Jiang, H.Hasegawa: "A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC-and RF-Performance"IEEE Electron Device Letter. vol.22. 312-314 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Anantathanasarn, H.Hasegawa: "Surface passivation of GaAs using an ultrathin cubic GaN interface control layer"Journal of Vacuum Science & Technology B. 19. 1589-1596 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Hashizume, S.Ootomo, S.Oyama, M.Konishi, H.Hasegawa: "Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostuctures"Journal of Vacuum Science & Technology B. 19. 1675-1681 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Hasegawa, H.Takahashi, T.Yoshida, T.Sakai: "Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique"Materials Science & Engineering. B80. 147-151 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Hashizume, R.Nakasaki, S.Ootomo, S.Oyama, H.Hasegawa: "Surface characterization of GaN and AlGaN layers grown by MOVPE"Materials Science & Engineering. B80. 309-312 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Hasegawa: "QUANTUM DEVICES AND INTEGRATED CIRCUITS BASED ON QUANTUM CONFINEMENT IN III-V NANOWIRE NETWORKS CONTROLLED BY NANO-SCHOTTKY GATES"The Electrochemical Society Proceedings. Volumes 2001-19. 189-208 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Hasegawa, S.Kasai: "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGeAs nanowires"Physica E. 11. 149-154 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Ootomo, T.Hashizume, H.Hasegawa: "Surface passivation of AlGaN/GaN heterostructures using and ultrathin Al_2O_3 layer"Physica Status Solidi A-Applied Research. 188. 371-374 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Hasegawa: "Formation and Quantum Devices Applications of III-V Compound Semiconductor Nanostructures"Journal of The Korean Physica Society. 39. S402-S409 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Miczek, B.Adamowicz, H.Hasegawa: "Characterization of electronic properties of InP(100) surfaces from computer-aided analysis of photoluminescence"Opt.Appl.. 32. 227-233 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Sato, I.Tamai, C.Jiang, H.Hasegawa: "Selective MBE growth of GaAs/AlGaAs nanowires on patterned GaAs(001) substrates and its application to hexagonal nanowire network formation"Institute of Physics Conference.Series. vol.170. 325-330 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] F.Ishikawa, H.Hasegawa: "Self-consistent computer analysis of cathodoluminescence in-depth spectra for compound semiconductor heterostructures"Institute of Physics Conference.Series. vol.170. 461-466 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Konishi, S.Anantathanasarn, T.Hashizume, H.Hasegawa: "In-situ XPS and photoluminescence characterization of GaN surfaces grown by MBE on MOVPE GaN templates"Institute of Physics Conference.Series. vol.170. 837-842 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.G.Xie, K.Takahashi, H.Takahashi, C.Jiang, S.Kasai, H.Hasegawa: "Surface passivation of epitaxial multilayer structures for InP-based high-speed devices by an ultrathin silicon layer"Electron.Comm.Jpn.. vol.2-85. 17-28 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] B.Adamowicz, M.Miczek, S.Arabasz, H.Hasegawa: "Rigorous analysis of photoluminescence efficiency for characterization of electronic properties of InP(100) surfaces"Vacuum. vol.67. 3-10 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Yumoto, S.Kasai, H.Hasegawa: "Graph-based quantum logic circuits and their realization by novel GaAs multiple quantum wire branch switches utilizing Schottky wrap gates"Microelectronics Engineering. vol.63. 287-291 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] C.Jiang, T.Muranaka, H.Hasegawa: "Molecular beam epitaxy growth mechanism and wire width control for formation of dense networks of narrow InGaAs quantum wires"Microelectronics Engineering. vol.63. 293-299 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Kasai, H.Hasegawa: "A single electron binary-decision-diagram quantum logic circuit based on Schottky wrap gate control of a GaAs nanowire hexagon"IEEE Electron Device Letter. vol.23. 446-448 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Miczek, B.Adamowicz, H.Hasegawa: "Determination of InP surface state density distribution from excitation-power-dependent photoluminescence spectra using genetic algorithm-based fitting procedure"Surface Science. vol.507. 240-244 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Kasai, H.Hasegawa: "III-V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks"Applied Surface Science. vol.190. 176-183 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] A.Ito, T.Muranaka, C.Jiang, H.Hasegawa: "Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy"Applied Surface Science. vol.190. 231-235 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Yumoto, S.Kasai, H.Hasegawa: "Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures"Applied Surface Science. vol.190. 242-246 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Negoro, S.Kasai, H.Hasegawa: "Scanned-probe topological and spectroscopic study of surface states on clean and St-deposited GaAs(001)-c(4×4) surfaces"Applied Surface Science. vol.190. 269-274 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Z.Fu, S.Kasai, H.Hasegawa: "Gated photoluminescence study of oxide-free InP MIS structure having an ultrathin silicon interface control layer"Applied Surface Science. vol.190. 298-301 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Oyawa, T.Hashizume, H.Hasegawa: "Mechanism of current leakage through metal/n-GaN interfaces"Applied Surface Science. vol.190. 322-325 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Anantathanasarn.H.Hasegawa: "Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer"Applied Surface Science. vol.190. 343-347 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Z.Jin, T.Hashizume, H.Hasegawa: "Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride"Applied Surface Science. vol.190. 361-365 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] F.Ishikawa, H.Hasegawa: "Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces"Applied Surface Science. vol.190. 508-512 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Nakano, N.Negoro, H.Hasegawa: "Strong photoluminescence and low surface state densities on clean and silicon deposited (001) surfaces of GaAs with (4 × 6) reconstruction"Japanese Journal of Applied Physics. vol.41. 2542-2547 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Yumoto, S.Kasai, H.Hasegawa: "Novel quantum wire branch-switches for binary decision diagram logic architecture utilizing Schottky wrap-gate control of GaAs/AlGaAs nanowires"Japanese Journal of Applied Physics. vol.41. 2671-2674 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Endo, Z.Jin, S.Kasai, H.Hasegawa: "Reactive ion beam etching of GaN and AlGaN/GaN for nanostructure fabrication using methane-based gas mixtures"Japanese Journal of Applied Physics. vol.41. 2689-2693 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Kasai, H.Hasegawa: "GaAs and InGaAs single electron hexagonal nanowire circuits based on binary decision diagram logic architecture"Phisica E. 13(2-4). 925-929 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Muranaka, S.Kasai, C.Jiang, H.Hasegawa: "Control of morphology and wire width in InGaAs ridge quantum wires grown by atomic hydrogen-assisted selective molecular beam epitaxy"Phisica E. 13(2-4). 1185-1189 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Anantathanasarn, H.Hasegawa: "Pinning-free GaAs MIS structures with Si interface control layers formed on (4×6) reconstructed (001) surface"Applied Surface Science. vol.216. 275-282 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] F.Ishikawa, H.Hasegawa: "Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures"Applied Surface Science. vol.216. 885-889 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Kasai, W.Han, M.Yumoto, H.Hasegawa: "Terahertz response of Schottky wrap gate-controlled quantum dots"Physica Status Solidi C. vol.0. 1329-1332 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Hasegawa: "Characterization and control of surfaces and interfaces for III-V nanoelectronics"Physica Status Solidi A. vol.195. 9-17 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Akazawa, H.Hasegawa: "A UHV contactless capacitance-voltage characterization method applicable to semiconductor layers grown on insulating substrates"Physica Status Solidi A. vol.195. 248-254 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Kakumu, F.Ishikawa, S.Kasai, T.Hashizume, H.Hasegawa: "Control of order parameter during growth of In_<0.5>Ga_<0.5>P/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine"Japanese Journal of Applied Physics. vol.42. 2230-2236 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Hasegawa, T.Muranaka, S.Kasai, T.Hashizume: "Fabrication of AlGaN/GaN quantum nanostructures by methane-based dry etching and characterization of their electrical properties"Japanese Journal of Applied Physics. vol.42. 2375-2381 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Kasai, M.Yumoto, H.Hasegawa: "Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach"Solid State Electronic. vol.47. 199-204 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] A.Kameda, S.Kasai, T.Sato, H.Hasegawa: "Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs"Solid State Electronic. vol.47. 323-331 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Hashizume, S.Ootomo, T.Inagaki, H.Hasegawa: "Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors"Journal of vacuum Science and Technology B. 21. 1828-1838 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Hasegawa, T.Inagaki, S.Ootomo, T.Hashizume: "Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors"Journal of vacuum Science and Technology B. 21. 1844-1855 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Negoro, S.Anantathanasarn, H.Hasegawa: "Effects of Si deposition on the properties of Ga-rich (4×6) GaAs(001) surfaces"Journal of vacuum Science and Technology B. 21. 1945-1952 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Hasegawa: "Formation of III-V low dimensional structures and their applications to intelligent quantum chips"Microelectronics Journal. 34. 341-345 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Hashizume, S.Ootomo, H.Hasegawa: "Al_2O_3-based surface passivation and insulated gate structure for AlGaN.GaN HFETs"Phisica Status Solidi C. Vol.0. 2380-2384 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] F.Ishikawa H.Hasegawa: "Characterization of Recombination Processes in GaN by Cathodoluminescence In-Depth Spectroscopy"Physica Status Solidi C. Vol.0(7). 2707-2711 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Hashizume, S.Ootomo, H.Hasegawa: "Suppression of current Collapse in Insulated Gate AlGaN/GaN Heterostructure Field-Effect Transistors Using Ultrathin Al_2O_3 Dielectric"Applied Physics Letter. vol.83(14). 2952-2954 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Sato, I.Tamai, H.Hasegawa: "Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism"Institute of Physics Conference Series. vol.174-3. 145-148 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Hasegawa, T.Inagaki, S.Ootomo, T.Hashizume: "Properties of Electronic States at Free Surfaces and Schottky Barrier Interfaces of AlGaN/GaN"Institute of Physics Conference Series. vol.174-3. 299-302 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Tamai, T.Sato, H.Hasegawa: "Formation of High-Density GaAs Hexagonal Nano-Wire Networks by Selective MBE Growth on Pre-patterned (001) Substrates"Physica E. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Yoshida, I.Tamai, T.Sato, H.Hasegawa: "Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates"Japanese Journal of Applied Physics. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Sato, I.Tamai, S.Yoshida, H.Hasegawa: "Evolution Mechanism of Heterointerface Cross Section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy"Applied Surface Science. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Hashizume, H.Hasegawa: "Effects of Nitrogen Deficiency on Electronic Properties of AlGaN Surfaces Subjected to Thermal and Plasma Processes"Applied Surface Science. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Iizuka, A.Manaf Hashim, H.Hasegawa: "Surface Plasma Wave Interactions between Semiconductor and Electromagnetic Space Harmonics from Microwave to THz Range"Thin Solid Films. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Kotani, H.Hasegawa, T.Hashizume: "Computer Simulation of Current Transport in GaN and AlGaN Schottky Diodes Based on Thin Surface Barrier Model"Applied Surface Science. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] A.Manaf Hashim, T.Hashizume, K.Iizuka, H.Hasegawa: "Plasma Wave Interactions in Microwave to THz Range between Carriers in Semiconductor 2DEG and Interdigital Slow Waves"Superlattice and Microstructures. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Yumoto, T.Tamura, T.Sato, H.Hasegawa: "Fabrication of BDD Quantum Node Switches on Embedded GaAs Quantum Wires Grown by Selective MBE"Superlattice and Microstructures. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Anantathanasarn: "Pinning-free GaAs MIS structures with Si interface control layers formed on (4x6) reconstructed (001) surface"Applied Surface Science. 216. 275-282 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] F.Ishikawa: "Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures"Applied Surface Science. 212-213. 885-889 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] S.Kasai: "Terahertz response of Schottky wrap gate-controlled quantum dots"Physica Status Solidi C. 0. 1329-1332 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Hasegawa: "Characterization and control of surfaces and interfaces for III-V nanoelectronics"Physica Status Solidi A. 195. 9-17 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] M.Akazawa: "A UHV contactless capacitance-voltage characterization method applicable to semiconductor layers grown on insulating substrates"Physica Status Solidi A. 195. 248-254 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Kakumu: "Control of order parameter during growth of In_<0.5>Ga_<0.5>P/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine"Japanese Journal Applied Physics. 42. 2230-2236 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Hasegawa: "Fabrication of AlGaN/GaN quantum nanostructures by methane-based dry etching and characterization of their electrical properties"Japanese Journal Applied Physics. 42. 2375-2381 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] S.Kasai: "Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach"Solid State Electronics. 47. 199-204 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] A.Kameda: "Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs"Solid State Electronics. 47. 199-204 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Hashizume: "Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors"Journal of Vacuum Science and Technology B. 21. 1844-1855 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Hasegawa: "Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors"Journal of Vacuum Science and Technology B. 21. 1844-1855 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] N.Negoro: "Effects of Si deposition on the properties of Ga-rich (4X6) GaAs (001) surfaces"Journal of Vacuum Science and Technology B. 21. 1945-1952 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Hasegawa: "Formation of III-V low dimensional structures and their applications to intelligent quantum chips"Microelectronics Journal. 34. 341-345 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Hashizume: "Al_2O_3-based surface passivation and insulated gate structure for AlGaN/GaN HFETs"Physica Status Solidi C. 0. 2380-2384 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] F.Ishikawa: "Characterization of Recombination Processes in GaN by Cathodoluminescence In-Depth Spectroscopy"Physica Status Solidi C. 0. 2707-2711 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Sato: "Selective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned (001) Substrates and Its Growth Mechanism"Institute Physics Conference Series. 174. 145-148 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Hasegawa: "Properties of Electronic States at Free Surfaces and Schottky Barrier Interfaces of AlGaN/GaN"Institute Physics Conference Series. 174. 299-302 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] I.Tamai: "Formation of High-Density GaAs Hexagonal Nano-Wrie Networks by Selective MBE Growth on Pre-patterned (001) Substrates"Physica E. (in press). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] S.Yoshida: "Selective Molecular Beam Epitaxy Growth of GaAs Hexagonal Nanowire Networks on (111)B Patterned Substrates"Japanese Journal of Applied Physics. (in press). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Sato: "Evolution Mechanism of Heterointerface Cross Section during Growth of GaAs Ridge Quantum Wires by Selective Molecular Beam Epitaxy"Applied Surface Science. (in press). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Hashizume: "Effects of Nitrogen Deficiency on Electronic Properties of AlGaN Surfaces Subjected to Thermal and Plasma Processes"Applied Surface Science. (in press). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] K.Iizuka: "Surface Plasma Wave Interactions between Semiconductor and Electromagnetic Space Harmonics from Microwave to THz Range"Thin Solid Films. (in press). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] J.Kotani: "Computer Simulation of Current Transport in GaN and AlGaN Schottky Diodes Based on Thin Surface Barrier Model"Applied Surface Science. (in press). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] A.Manaf Hashim: "Plasma Wave Interactions in Microwave to THz Range between Carriers in Semiconductor 2DEG and Interdigital Slow Waves"Superlattice and Microstructures. (in press). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] M.Yumoto: "Fabrication of BDD Quantum Node Switches on Embedded GaAs Quantum Wires Grown by Selective MBE"Superlattice and Microstructures. (in press). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Y.Nakano, N.Negoro, H.Hasegawa: "Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited(001)Surface of GaAs with(4x6)Reconstruction"Japanese Journal Applied Physics. 41(4B). 2542-2547 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Endo, Z.Jin, S.Kasai, H.Hasegawa: "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures"Japanese Journal Applied Physics. 41(4B). 2689-2693 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] C.Jiang, T.Muranaka, H.Hasegawa: "Structural and Optical Properties of 10 nm-class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate"Japanese Journal Applied Physics. 41(4B). 2683-2688 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Yumoto, S.Kasai, H.Hasegawa: "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires"Japanese Journal Applied Physics. 41(4B). 2671-2674 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Kasai, H.Hasegawa: "III-V quantum devices and circuits based on nanoscale Schottky gate control of hexagonal quantum wire networks"Applied Surface Science. 190(1-4). 176-183 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Ito, T.Muranaka, C.Jiang, H.Hasegawa: "Formation of high-density hexagonal networks of InGaAs ridge quantum wires by atomic hydrogen-assisted selective molecular beam epitaxy"Applied Surface Science. 190(1-4). 231-235 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Yumoto, S.Kasai, H.Hasegawa: "Gate control characteristics in GaAs nanometer-scale Schottky wrap gate structures, Applied Surface Science"Applied Surface Science. 190(1-4). 242-246 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Negoro, S.Kasai, H.Hasegawa: "Scanned-probe topological and spectroscopic study of surface states on clean and Si-deposited GaAs (001)-c(4×4)surfaces"Applied Surface Science. 190(1-4). 269-274 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Z.Fu, S.Kasai, H.Hasegawa: "Gated photoluminescence study of oxide-free InP MIS structure having an ultrathin silicon interface control layer"Applied Surface Science. 190(1-4). 298-301 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Oyama, T.Hashizume, H.Hasegawa: "Mechanism of current leakage through metal/n-GaN interfaces"Applied Surface Science. 190(1-4). 322-325 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Anantathanasarn, H.Hasegawa: "Photoluminescence and capacitance-voltage characterization of GaAs surface passivated by an ultrathin GaN interface control layer"Applied Surface Science. 190(1-4). 343-347 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Z.Jin, T.Hashizume, H.Hasegawa: "Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride"Applied Surface Science. 190(1-4). 361-365 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] F.Ishikawa, H.Hasegawa: "Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces"Applied Surface Science. 190(1-4). 508-512 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Miczek, B.Adamowicz, H.Hasegawa: "Determination of InP surface state density distribution from excitation-power-dependent photoluminescence spectra using genetic algorithm-based fitting procedure"Surface Science. 507. 240-244 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Kasai, H.Hasegawa: "A Single Electron Binary-Decision-Diagram Quantum Logic Circuit Based on Schottky Wrap Gate Control of a GaAs Nanowire Hexagon"IEEE Electron Device Letters. 23(8). 446-448 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Hasegawa, S.Oyama: "Mechanism of anomalous current transport in n-type GaN Schottky contacts"Journal of Vacuum Science & Technology. B20. 1647-1655 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Miki Yumoto, Seiya Kasai, Hideki Hasegawa: "Graph-based quantum logic circuits and their realization by novel GaAs multiple quantum wire branch switches utilizing Schottky wrap gates"Microelectronic Engineering. 63(1-3). 287-291 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Chao Jiang, Tsutomu Muranaka, Hideki Hasegawa: "Molecular beam epitaxy growth mechanism and wire width control for formation of dense networks of narrow InGaAs quantum wires, Microelectronic Engineering"Microelectronic Engineering. 63(1-3). 293-299 (2002)

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      2002 Annual Research Report
  • [Publications] B.Adamowicz, M.Miczek, S.Arabasz, H.Hasegawa: "Rigorous analysis of photoluminescence efficiency for characterization of electronic properties of InP(001)surfaces"Vacuum. 67(1). 3-10 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Ootomo, T.Hashizume, H.Hasegawa: "A Novel Thin Al2O3 Gate Dielectric by ECR-Plasuma Oxidation of Al for AlGaN/GaN Insulated Gate Heterostructure Field-Effect Transistors"Phys. Stat. Sol.(c). 0(1). 90-94 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Konishi, S.Anantathanasarn, T.Hashizume, H.Hasegawa: "In-situ XPS and photoluminescence characterization of GaN surfaces grown by MBE on MOVPE GaN templates"Inst. Phys. Conf. Ser.. 170. 837-842 (2002)

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      2002 Annual Research Report
  • [Publications] F.Ishikawa, H.Hasegawa: "Self-consistent computer analysis of cathodoluminescence in-depth spectra for compound semiconductor heterostructures"Inst. Phys. Conf. Ser.. 170. 461-466 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Sato, I.Tamai, C.Jian, H.Hasegawa: "Selective MBE Growth of GaAs/AlGaAs Nanowires on Patterned GaAs(001) Substrates and Its Application to Hexagonal Nanowire Network Formation"Inst. Phys. Conf. Ser.. 170. 325-330 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Hasegawa: "Characterization and control of surfaces and interfaces for III-V nanoelectronics"PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 195. 9-17 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Akazawa, H.Hasegawa: "UHV contactless capacitance-voltage characterization method applicable to semiconductor layers grown on insulating substrates"PHYSICA STATUS SOLIDI A-APPLIED RESEARCH. 195. 248-254 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Kasai, M.Yumoto, H.Hasegawa: "Fabrication of GaAs-based integrated half and full adders by novel hexagonal BDD quantum circuit approach"Solid-State Electronics. 47(2). 199-204 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Kameda, S.Kasai, T.Sato, H.Hasegawa: "Effects of surface states on control characteristics of nano-meter scale Schottky gates formed on GaAs"Solid-State Electronics. 47(2). 323-331 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Hasegawa: "III-V Nanoelectronics and Related Surface/Interface Issues"Applied Surface Science. (in press). (2003)

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      2002 Annual Research Report
  • [Publications] F.Ishikawa, H.Hasegawa: "Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures"Applied Surface Science. (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Hasegawa, T.Muranaka, S.Kasai, T.Hashizume: "Fabrication of AlGaN/GaN Quantum Nanostructures by Methane-Based Dry Etching and Characterization of Their Electrical Properties"Japanese Journal Applied Physics. (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Kakumu, F.Ishikawa, S.Kasai, T.Hashizume, H.Hasegawa: "Control of Order Parameter during Growth of In0.5Ga0.5P/GaAs Heterostructures by GSMBE Using Tertiarybutylphosphine(TBP)"Japanese Journal of Applied Physics. (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Kasai, W.Han M.Yumoto, H.Hasegawa: "Theraherz Response of Schottky Wrap Gate-Controlled Quantum Dots"Physica Status Solidi. (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Hasegawa, T.Inagaki, S.Ootomo, T.Hashizume: "Properties of Electronic States at Free Surfaces and Schottky Barrier Interfaces of AlGaN/GaN Heterostructure"Inst. Phys. Conf. Ser. (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Sato, I.Tamai, H.Hasegawa: "elective MBE Growth of GaAs Ridge Quantum Wire Arrays on Patterned(001)Substrates and Its Growth Mechanism"Inst. Phys. Conf. Ser. (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Anantathanasarn, H.Hasegawa: "Pinning-Free GaAs MIS Structures with Si Interface Control Layers Formed on (4x6) Reconstructed(001)Surface"Applied Surface Science. (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Inagaki, T.Hashizume, H.Hasegawa: "Effects of Surface Processing on 2DEG Current Transport at AlGaN/GaN Interface Studied by Gateless HFET Structure"Applied Surface Science. (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Hasegawa, T.Hashizume: "Prospects and Passivation of Electronic States at Free Surfaces and Schottky Interfaces of GaN and Related Alloys"Materials Research Society Symposium Proceedings Series. (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Hasegawa: "Formation of III-V Low Dimensional Structures and Their Applications to Intelligent Quantum Chips"Microelectronics Journal. (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Sato: "Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III-V Single Electron Devices and Quantum Devices"Japanese Journal of Applied Physics. 40. 2021-2025 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Okada: "Novel Single Electron Memory Device Using Metal Nano-Dots and Schottky In-Plane Gate Quantum Wire Transistors"Japanese Journal of Applied Physics. 40. 2797-2800 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Muranaka: "Characterization and Optimization of Atomic Hydrogen Cleaning of InP Surface for Selective MBE growth of InGaAs Quantum Structure Arrays"Japanese Journal of Applied Physics. 40. 1874-1877 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] F.Ishikawa: "Bulk and Interface Deep Levels in InGaP/GaAs Heterostructures Grown by Tertiarybutyl Phosphine-Based Gas Source Molecular Beam Epitaxy"Japanese Journal of Applied Physics. 40. 2769-2774 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Z.Jin: "In-Situ XPS Study of Etch Chemistry of Methane-Based RIBE of InP Using N_2"Japanese Journal of Applied Physics. 40. 2757-2761 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] C.Jiang: "Improvement of Growth Process to Achieve High Geometrical Uniformity in InGaAs Ridge Quantum Wires Grown by Selective MBE on Patterned InP Substrate"Japanese Journal of Applied Physics. 40. 3003-3008 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Kasai: "GaAs-Based Single Electron Transistors and Logic Inverters Utilizing Schottky Wrap-Gate Controlled Quantum Wires and Dots"Japanese Journal of Applied Physics. 40. 2029-2032 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Miczek: "Computer analysis of photoluminescence efficiency at InP surface with U-shaped surface state continuum"Vacuum. 63. 223-227 (2001)

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      2001 Annual Research Report
  • [Publications] T.Yoshida: "Realization of UHV-Compativle Defect-Free Hydrogen Terminated Silicon Surfaces with the Use of UHV Contactless Capacitance-Voltage Method"Applied Surface Science. 175/176. 163-168 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Sato: "Current Transport and Capacitance-Voltage Characteristics of GaAs and InP Nanometer-Sized Schottky Contacts Formed by in situ Electrochemical Process"Applied Surface Science. 175/176. 181-186 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Kasai: "Conductance Gap Anomaly in Scanning Tunneling Spectra of MBE-Grown (001) Surfaces of III-V Compound Semiconductors"Applied Surface Science. 175/176. 255-259 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.-G.Xie: "Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer"IEICE-C. E84-C10. 1335-1343 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Takahashi: "Process Characterization and Optimization for a Novel Oxide-Free Insulated Gate Structure for InP MISFETs Having Silicon Interface Control Layer"IEICE-C. E84-C10. 1344-1349 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Hashizume: "Surface passivation process for GaN-based electronic devices utilizing ECR-CVD SiN_x film"IEICE-C. E84-C10. 1455-1461 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] 謝永桂: "InP系高速デバイス用多層エピタキシャル構造のSi超薄膜による表面不活性化"電子情報通信学会論文誌C. J84-C. 872-882 (2001)

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      2001 Annual Research Report
  • [Publications] T.Yamada: "Quantum-Dot Logic Circuits Based on the Shared Binary-Decision Diagram"Japanese Journal of Applied Physics. 40. 4485-4488 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.G.Xie: "A Novel InGaAs/InAlAs Insulated Gate Pseudomorphic HEMT with a Silicon Interface Control Layer Showing High DC- and RF-Performance"IEEE Electron Device Letter. 22. 312-314 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Anantathanasarn: "Surface passivation of GaAs using an ultrathin cubic GaN interface control layer"Journal of Vacuum Science & Technology B. 19. 1589-1596 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Hashizume: "Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostuctures"Journal of Vacuum Science & Technology B. 19. 1675-1681 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Hasegawa: "Ultra high vacuum-based in situ characterization of compound semiconductor surfaces by a contactless capacitance-voltage technique"Materials Science & Engineering. B80. 147-151 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Hashizume: "Surface characterization of GaN and AlGaN layers grown by MOVPE"Materials Science & Engineering. B80. 309-312 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Hasegawa: "Hexagonal binary decision diagram quantum logic circuits using Schottky in-plane and wrap-gate control of GaAs and InGaAs nanowires"Physica E. 11. 149-154 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Ootomo: "Surface passivation of AlGaN/GaN heterostructures using and ultrathin Al2O3 layer"Physica Status Solidi A-Applied Research. 188. 371-374 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Hasegawa: "Formation and Quantum Devices Applications of III-V Compound Semiconductor Nanostructures"Journal of the Korean Physical Society. 39. S402-S409 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Konishi: "In-situ XPS and Photoluminescence Characterization of GaN Surfaces Grown by MBE on MOVPE GaN Templates"Institute of Physics Conference Series. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Sato: "Selective MBE Growth of GaAs/AlGaAs Nanowires on Patterned GaAs (001) Substrates and Its Application to Hexagonal Nanowire Network Formation"Institute of Physics Conference Series. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] F.Ishikawa: "Self-consistent Computer Analysis of Cathodoluminescence In-Depth Spectra for Compound Semiconductor Heterostructures"Institute of Physics Conference Series. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Kasai: "GaAs and InGaAs Single Electron Hexagonal Nanowire Circuits Based on Binary Decision Diagram Logic Architecture"Physica E. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Muranaka: "Control of Morphology and Wire Width in InGaAs Ridge Quantum Wires Grown by Atomic Hydrogen-Assisted Selective Molecular Beam Epitaxy"Physica E. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Yumoto: "Graph-Based Quantum Logic Circuits and Their Realization by Novel GaAs Multiple Quantum Wire Branch Switches Utilizing Schottky Wrap Gates"Microelectronics Engineering. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] C.Jiang: "MBE Growth Mechanism and Wire Width Control for Formation of Dense Networks of Narrow InGaAs Quantum Wires"Microelectronics Engineering. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Hirano: "Electrochemical Formation of Self-Assembled InP Nanopore Arrays and Their Use as Templates for Molecular Beam Epitaxy Growth of lnGaAs Quantum Wires and Dots"Japanese Journal of Applied Physics. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Z.Fu: "Optimization of Novel Oxide-Free Insulated Gate Structure for InP Having An Ultrathin Silicon Interface Control Layer"Japanese Journal of Applied Physics. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] C.Jiang: "Realization of Submicron-Pitch Linear Arrays of Nanometer-Sized InGaAs Ridge Quantum Wires by Selective MBE Growth on Patterned InP Substrates"Japanese Journal of Applied Physics. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Yumoto: "Novel Quantum Wire Branch-Switches for Binary Decision Diagram Logic Architecture Utilizing Schottky Wrap-Gate Control of GaAs/AlGaAs Nanowires"Japanese Journal of Applied Physics. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] C.Jiang: "Structural and Optical Properties of 10 nm-Class InGaAs Ridge Quantum Wire Arrays with Sub-Micron Pitches Grown by Selective MBE on Patterned InP Substrate"Japanese Journal of Applied Physics. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Endo: "Reactive Ion Beam Etching of GaN and AlGaN/GaN for Nanostructure Fabrication Using Methane-Based Gas Mixtures"Japanese Journal of Applied Physics. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Nakano: "Strong Photoluminescence and Low Surface State Densities on Clean and Silicon Deposited (001) Surfaces of GaAs with (4x6) Reconstruction"Japanese Journal of Applied Physics. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Kasai: "III-V Quantum Devices and Circuits Based on Nano-scale Schottky Gate Control of Hexagonal Quantum Wire Networks"Applied Surface Science. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] A.Ito: "Formation of High-Density Hexagonal Networks of InGaAs Ridge Quantum Wires by Atomic Hydrogen Assisted Selective Molecular Beam Epitaxy"Applied Surface Science. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Yumoto: "Gate Control Characteristics in GaAs Nanometer-Scale Schottky Wrap Gate Structure"Applied Surface Science. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] N.Negoro: "Scanned-Probe Topological and Spectroscopic Study of Surface States on Clean and Si-Deposited GaAs (001)-c(4x4) surfaces"Applied Surface Science. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] F.Ishikawa: "Depth Resolved Cathodluminescence Characterization of Buried InGaP/GaAs Heterointerfaces"Applied Surface Science. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Anantathanasarn: "Photoluminescence and Capacitance-Voltage Characterization of GaAs Surface Passivated by an Ultrathin GaN Interface Control Layer"Applied Surface Science. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Z.Fu: "Gated Photoluminescence Study of Oxide-Free InP MIS Structure Having an Ultrathin Silicon Interface Control Layer"Applied Surface Science. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Z.Jin: "Effects of Nitrogen Addition on Methane-Based ECR Plasma Etching of GaN and Related Materials"Applied Surface Science. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Oyama: "Mechanism of Current Leakage through Metal/n-GaN Interfaces"Applied Surface Science. (in press). (2002)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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