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Highly Sesitive and High-resolution Amplification Solid-State Imagine System with Instant Imaging Parareli Processor

Research Project

Project/Area Number 13305024
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

SUGAWA Shigetoshi  Tohoku University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (70321974)

Co-Investigator(Kenkyū-buntansha) OHMI Tadahiro  Tohoku University, New Industry Creation Hatchery Center, Professor, 未来科学技術共同研究センター, 教授 (20016463)
KOTANI Koji  Tohoku University, Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (20250699)
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥51,090,000 (Direct Cost: ¥39,300,000、Indirect Cost: ¥11,790,000)
Fiscal Year 2002: ¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2001: ¥32,500,000 (Direct Cost: ¥25,000,000、Indirect Cost: ¥7,500,000)
KeywordsImage Sensor / plasma CVD / Image Compression / Object Extraction / 固体撮像システム / 並列画像処理 / 画像データ圧縮 / 高感度撮像素子
Research Abstract

This research aims at realizing of personal mobile system which can instantly import and modify information in worldwide through global network, then make a transmission or a record, and quickly find and utilize a required datum in enormous amount of information. In order to realize such system, instant transmission of the high-definition picture information, record, and search are essential technologies. Therefore, we developed the algorithm which raises the rate of picture compression after separating object completely at the time of imaging, and built the foundation of realization of the intelligent man-machine-interface system equipped with recognition and judgment processing.
First, in order to form amorphous photoelectric film used as photoelectric conversion layer without structural failure, we created the gas flow control system featuring the gas pressure control method, which can instantly control composition of gas-mixture in film formation chamber, and microwave excited high- … More density plasma equipment having dual shower-plate featuring low electron temperature, in which the novel exhaust pumps featuring non-equivalent pitch and non-equivalent angle of lead screw are implemented. By using this equipment, we established the foundation to form the highly reliable photoelectric film, which is formed by high-quality CVD, and highly selective RIE for miniaturized contact/ via-hole. Both of processes are realized by the selection of plasma-excitation gases and process-gases, respectively, which can realize suppression of both excess-decomposition of process gases and ion-bombardment-damages.
Moreover, in order to realize the highly sensitive and highly efficient image sensor which carries out noise control while imaging picture at the video rate and extracts the attributes and the amount of features which each imaged object has characteristic, such as a position of the depth direction, motion, color balance, and roughness (spatial frequency), on real time, and carries out category separation, we examined the device, circuit, and processing algorithm in detail, and completed the chip design.
Furthermore, we devised the technique of choosing the optimal image compression algorithm for every divided object category and established the foundation of the new vector quantization technique which maintains high image quality and realizes the overwhelming high compression rate. Less

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (20 results)

All Other

All Publications (20 results)

  • [Publications] Shunsuke Inoue: "A3.25M-pixel APS-C size CMOS Image Sensor"2001 Workshop on Charge-Coupled Device and Advanced Image Sensors. 16-19 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 中山貴裕: "ベクトル量子化を用いた静止画像高画質高圧縮システム"電子情報通信学会技術研究報告. 47-52 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masanori Fujibayashi: "A Still Image Encoder Based on Adaptive Resolution Vector Quantization Realizing Compressin Ratio over 1/200 Featuring Needless Calculation Elimination Architecture"2002 Symposium on VLSI Circuits Dig. Tech. Papers. 262-265 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Hiroaki Tanaka: "High Quality Silicon Oxide Film Formed by Diffusion Region PECVD arid Oxgen Radical Treatment using Microwave-Excited High-Density Plasma"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials. 424-425 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Tetsuya Goto: "A New Microwave-Excited Plasma Etching Equipment for Separated Plasma Excited Region from Etching Process Region"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials. 444-445 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masanori Fujibayashi: "A Still Image Encoder Based on Adaptive Resolution Vecotr Quantization Employing Needless Calculation Architectures"Asisa and South Pacific Design Automation Conference 2003. 567-568 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S. Inoue, K. Sakurai, T. Koizumi, H. Hiyama, T. Asada, S. Sugawa, A. Maeda, K. Higashitani, H. Kato, K. Iizuka, M. Yamazaki: "A 3.25M-pixel APS-C size CMOS Image Sensor"2001 Workshop on Charge-Coupled Device and Advanced Image Sensors. 16-19 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Nakayama, N. Nozawa, M. Fujibayashi, K. Mochizuki, M. Konda, K. Kotani, S. Sugawa, T. Ohmi: "Still Image Processing Having Very High Compression Ratio and Quality Using Adaptive Resolution"Technical Report of IEICE, DSP2001-l16, ICD2001-121, IE2001-100(2001-10). 47-52 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Fujibayashi, T. Nozawa, T. Nakayama, K. Mochizuki, K. Konda, K. Kotani, S. Sugawa, T. Ohmi: "A Still Image Encoder Based on Adaptive Resolution Vector Quantization Realizing Compression Ratio over 1/200 Featuring Needless Calculation Elimination Architecture"2002 Symposium on VLSI Circuits Dig. Tech. Papers. 262-265 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] H. TanaKa, Z. Chuanjie, M. Hirayama, A. Teramoto, S. Sugawa, T. Ohmi: "High Quality Silicon Oxide Film Formed by Diffusion Region PECVD and Oxgen Radical Treatment using Microwave-Excited High-Density"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials. 424-425 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Goto, H. Yamaguchi, M. Hirayama, M. Moriguchi, S. Sugawa, T. Ohmi: "A New Microwave-Excited Plasma Etching Equipment for Separated Plasma Excited Region from Etching Process Region"Extended Abstracts of the 2002 International Conferenc on Solid State Devices and Materials. 444-445 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Fujibayashi, T. Nozawa, T. Nakayama, K. Mochizuki, K. Kotani, S. Sugawa, T. Ohmi: "A Still Image Encoder Based on Adaptive Resolution Vector Quantizasion Enploying Needless Calculation Eliminatio"Asia and South Pacific Design Automation Conference 2003. 6D5. 567-568 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Fujibayashi, T.Nozawa, T.Nakayama, K.Kotani, S.Sugawa: "Still Image Encoder Based on Adaptive Resolution Vector Quantization Realizing Compression Ratio over 1/200 Featuring Needless Calculation"2002 Symposium on VLSI Circuits Dig. Tech. Papers. 262-265 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Tanaka, Z.Chuanjie, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi: "High Quality Silicon Oxide Film Formed by Diffusion Region PECVD and Oxygen Radical Treatment using Microwave-Excited High-Density Plasma"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials. 424-425 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Goto, M.Hirayama, M.Moriguchi, S.Sugawa, T.Ohmi: "A New Microwave-Excited Plasma Etching Equipment separated Plasma Excited Region from Etching Process Region"Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials. 444-445 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Fujibayashi, T.Nozawa, T.Nakayama, K.Mochizuki, K.Kotani, S.Sugawa et al.: "A Still Image Encoder Based on Adaptive Resolution Vector Quantization Employing Needless Calculation Elimination Architecture"Asia and South Pacfic Design Automation Conference 2003. 6D-5. 567-568 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Morimoto, K.Kotani, S.Sugawa, T.Ohmi: "Interconnect and Substrate Structure for Gigascale Integration"JAPANASE JOURNAL OF APPLIED PHYSICS. 40・4B. 3038-3043 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Inoue, K.Sakurai. I.Ueno, T.Koizumi, H.Hiyama, T.Asaba, S.Sugawa: "A 3.25M-pixel APS-C size CMOS Image Sensor"2001 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors. 2001. 16-19 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] C.J.Zhong, H.Tanaka, M.Hirayama, S.Sugawa, T.Ohmi: "Deposition of high quality silicon films by Kr/O2/SiH4 high-density and low ions energy plasma at low temperature (400℃)"International Microelectronics Conference. 2001. 41-47 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] S.Sugawa, I.Ohshima, H.Ishino, Y.Saito, M.Hirayama, T.Ohmi: "Advantage of Silicon Nitride Gate insulator Transistor by using Microwave-Excited High-Density Plasma for applying 100nm Technology Node"2001 International Electron Device Meeting, TECHNICAL DIGEST. 2001. 817-820 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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