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The invention of interstitial-type metal nitride thin films with opto-agilent function and their device fabrication

Research Project

Project/Area Number 13305047
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Inorganic materials/Physical properties
Research InstitutionShizuoka University

Principal Investigator

TAKAHASHI Naoyuki  Shizuoka University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (50242243)

Co-Investigator(Kenkyū-buntansha) KANEMITSU Yoshihiko  Nara Institute of Sci. & Tech., Graduate School of Mater. Sci., Professor, 物質創成科学研究科, 教授 (30185954)
NAKAMURA Takato  Shizuoka University, Faculty of Engineering, Professor, 工学部, 教授 (10022287)
Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥49,400,000 (Direct Cost: ¥38,000,000、Indirect Cost: ¥11,400,000)
Fiscal Year 2003: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2002: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2001: ¥40,820,000 (Direct Cost: ¥31,400,000、Indirect Cost: ¥9,420,000)
KeywordsInterstitial-type metal nitride / Thin film / Electron spin resonance / Opto-agilent / Device / Iron nitride / Indium nitride / Tin nitride / 窒化マンガン / 薄膜材料 / 光磁気記録 / 強磁性共鳴 / 大気圧ハライド気相成長 / 国際情報交換(英国:米国)
Research Abstract

1.The invention of interstitial-type metal nitride thin films with opto-agilent function
(1)Thin films of interstitial-type metal nitride were successfully prepared by original halide vapour phase growth under atmospheric pressure.
(2)It was clarified, for the first time, that the thin films of interstitial-type metal nitride shows opto-agilent function.
(3)By control of the nitric invasion quantity, it was found that the opto-agilent function of interstitial-type metal nitride thin films show the wavelength dependence and optical anisotropy.
2.The investigation of opto-agilent function
(1)The variation of refractivity, reflectivity and band-gap of interstitial-type metal nitride thin films originates from the change of the local structure in the film by the nitrogen invasion quantity. It was found the wavelength dependence of the function appears by these phenomena.
(2)It was clarified by ESR and SQUIED measurement that the angle dependence of opto-agilent function derived from the magnetic anisotropy of unpaired electron in a film.
3.The device fabrication of interstitial-type metal nitride thin film with opto-agilent function
(1)The device fabrication of interstitial-type metal nitride thin films were successfully, such as optical switching and modulated light.
From these results, the practical application as optics device and electron device in next generation may be possible using thin film of interstitial-type metal nitride with opto-agilent function.

Report

(4 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (41 results)

All Other

All Publications (41 results)

  • [Publications] T.Takahashi, N.Takahashi, N.Tamura, T.Nakamura, M.Yoshioka, W.Inami, Y.Kawata.: "Growth of Fe_4N epitaxial layers displaying anomalous light reflectivity modulated by an external magnetic field"J.Mater.Chem.. 11. 3154-3158 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, K.Terada, T.Nakamura: "Growth of tin nitride tin films by atmospheric pressure chemical vapor deposition using halide sources."J.Mater.Sci.. 20. 227-229 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] 高橋直行, 高橋正志, 中村高遠, 金光義彦, Graham.M.Smith, Peter.C.Riedi: "オプトアジレソト機能を有する金属窒化物薄膜の作製-金属窒化物薄膜の不思議な機能"表面. 40. 141-151 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, A.Niwa, T.Takahashi, T.Nakamura, M.Yoshioka, Y.Momose: "Growth of InN pillar crystal films by means of atmospheric pressure halide chemical vapor deposition."J.Mater.Chem.. 12. 1573-1576 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Tamura, N.Takahashi, T.Nakamura, T.Takahashi: "Growth of Fe_4N Thin Films by Atmospheric Pressure Vapor Phase Epitaxy"J.Mater.Sci.Lett.. 21. 321-323 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, A.Niwa, H.Sugiura, T.Nakamura: "Indium nitride crystals with flower-like structure"Chem.Comm.. 3. 318-319 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, K.Terada, T.Takahashi, T.Nakamura, W.Inami, Y.Kawata: "Optical Response of Tin Nitride Thin Films Prepared by Atmospheric Pressure Halide Chemical Vapor Deposition."J.Electron.Mater.. 32. 268-271 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, M.Takekawa, T.Takahashi, T.Nakamura, M.Yoshioka, W.Inami, Y.Kawata.: "Optical recording characteristics of tin nitride thin films prepared by an atmospheric pressure halide chemical vapor deposition."Solid State Science. 5. 587-589 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Nakamura, T.Takahashi, N.Takahasi, T.Kato, K.Furukawa, G.M.Smith, C.J.Oates, PC.Riedi: "High field FMR investigation of epitaxially grown Fe_4N films on a MgO(001) substrate."Electrochem.& Solid State Letts.. 6(10). C146-C148 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, A.Niwa, T.Takahashi, T.Nakamura: "Crystalline orientation of the InN films prepared by atmospheric pressurehalide chemical vapor deposition"Solid State Science. 5. 1417-1419 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] 高橋 直行: "盆栽結晶-フラワー状InN結晶-"Crystal Letters. 62. 7-11 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Takahashi, N.Takahashi, T.Nakamura: "Preparation of freestanding Fe_4N crystal by vapor phase epitaxy under atmospheric pressure."Materials Chemistry & Physics. 83. 7-9 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Takahashi, N.Takahashi, T.Nakamura, T.Kato, K.Furukawa, G.M.Smith, P.C.Ried: "Magnetic characteristics of Fe_4N epitaxial films grown by halide vapor phase deposition under atmospheric pressure."Solid State Science. (In-press). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Takahashi, N.Takahashi, N.Tamura, T.Nakamura, M.Yoshioka, W.Inami, Y.Kawata: "Growth of Fe_4N epitaxial layers displaying anomalous light reflectivity modulated by an external magnetic field."J.Mater.Chem.. Vol.11. 3154-3158 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, K.Terada, T.Nakamura: "Growth of tin nitride tin films by atmospheric pressure chemical vapor deposition using halide sources."J.Mater.Sci.. Vol.20. 227-229 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, T.Takahashi, T.Nakamura, Y.Kanemitsu, Graham.M.Smith, Peter.C.Riedi: "Preparation of metal nitride thin films with opto-agilent function."Surface. Vol.40(in Japanese). 141-151 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N Takahashi, A.Niwa, T.Takahashi, T.Nakamura, M.Yoshioka, Y.Momose: "Growth of InN pillar crystal films by means of atmospheric pressure halide chemical vapor deposition."J.Mater.Chem.. Vol.12. 1573-1576 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Tamura, N.Takahashi, T.Nakamura, T.Takahashi: "Growth of Fe_4N Thin Films by Atmospheric Pressure Vapor Phase Epitaxy."J.Mater.Sci.Lett. Vol.21. 321-323 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, A.Niwa, H.Sugiura, T.Nakamura, T.Nakamura: "Indium nitride crystals with flower-like structure."Chem.Comm.. Vol.3. 318-319 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, K.Terada, T.Takahashi, T.Nakamura, W.Inami, Y.Kawata: "Optical Response of Tin Nitride Thin Films Prepared by Atmospheric Pressure Halide Chemical Vapor Deposition."J.Electron.Mater.. Vol.32. 268-271 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, M.Takekawa, T.Takahashi, T.Nakamura, M.Yoshioka, W.Inami, Y.Kawata: "Optical recording characteristics of tin nitride thin films prepared by an atmospheric pressure halide chemical vapor deposition."Solid State Science. Vol.5. 587-589 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Nakamura, T.Takahashi, N.Takahasi, T.Kato, K.Furakawa, G.M.Smith, C.J.Oates, P C.Riedi: "High field FMR investigation of epitaxially grown Fe_4N films on a MgO(001) substrate."Electrochem. & Solid State Letts.. Vol.6. C146-C148 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi: "Bonsai Crystal-Flower like InN crystal."Crystal Letter. Vol.62. 7-11 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Takahashi, N.Takahashi, T.Nakamura: "Preparation of freestanding Fe_4N crystal by vapor phase epitaxy under atmospheric pressure."Materials Chemistry & Physics. Vol.83. 7-9 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Takahashi, N.Takahashi, T.Nakamura, T.Kato, K.Furukawa, G.M.Smith, P.C.Ried: "Magnetic characteristics of Fe_4N pitaxial films grown by halide vapor phase deposition under atmospheric pressure."Solid State Science. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, A.Niwa, T.Takahashi, T.Nakamura: "Crystalline orientation of the InN films prepared by atmospheric pressure halide chemical vapor deposition"Solid State Science. Vol.5. 1417-1419 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Takahashi, A.Niwa, H.Sugiura, T.Nakamura: "Indium nitride crystals with flower-like structure"Chem.Comm.. 3. 318-319 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] N.Takahashi, K.Terada, T.Takahashi, T.Nakamura, W.Inami, Y.Kawata: "Optical Response of Tin Nitride Thin Films Prepared by Atmospheric Pressure Halide Chemical Vapor Deposition"J.Electron.Mater.. 32. 268-271 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] N.Takahashi, M.Takekawa T.Takahashi, T.Nakamura, M.Yoshioka, W.Inami, Y Kawata.: "Optical recording characteristics of tin nitride thin films prepared by an atmospheric pressure halide chemical vapor deposition"Solid State Science. 5. 587-589 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Nakamura, T.Takahashi, N.Takahasi, T.Kato, K.Furakawa, G.M.Smith, C.J.Oates, P C.Riedi: "High field FMR investigation of epitaxially grown Fe_4N films on a MgO(001) substrate"Electrochem. & Solid State Letts.. 6(10). C146-C148 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] N.Takahashi, A.Niwa, T.Takahashi, T, Nakamura: "Crystalline orientation of the InN films prepared by atmospheric pressurehalide chemical vapor deposition"Solid State Science. 5. 1417-1419 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 高橋 直行: "盆栽結晶-フラワー状InN結晶-"Crystal Letters. 62. 7-11 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Takahashi, N.Takahashi, T Nakamura: "Preparation of freestanding Fe_4N crystal by vapor phase epitaxy under atmospheric pressure"Materials Chemistry & Physics. 83. 7-9 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Takahashi, N.Takahashi, T.Nakamura, T.Kato, K.Furukawa, G.M.Smith, P.C.Ried: "Magnetic characteristics of Fe_4N epitaxial films grown by halide vapor phase deposition under atmospheric pressure"Solid State Science. (In-press). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] N.Takahashi: "Growth of InN pillar crystal films by means of atmospheric pressure halide chemical vapor deposition"Journal of Materials Chemistry. 12. 1573-1576 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 高橋 直行: "オプトアジレント機能を有する金属窒化物薄膜の創製-金属窒化物薄膜の不思議な機能-"表面. 40巻4号. 141-151 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Takahashi: "Indium nitride crystals with flower-like structure"Chemical Communications. 3. 318-319 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Takahashi: "Optical Response of Tin Nitride Prepared by Atmospheric Pressure Halide Chemical Vapor Deposition"Journal of Electronic Materials. (論文受理掲載予定). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Takahashi: "Optical recording characteristics of tin nitride thin films prepared by an atmospheric pressure halide chemical vapor deposition"Solid State Science. (論文受理掲載予定). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Tamura: "Growth of Fe_4N thin films by atmospheric pressure vapor phase epitaxy"Journal of Materials Science Letters. (論文受理 発表予定). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Takahashi: "Growth of Fe_4N epitaxial layers displaying anomalous light reflectivity modulated by an external magnetic field"Journal of Materials Chemistry. 12. 3154-3157 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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