| Project/Area Number |
13355006
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
機械工作・生産工学
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| Research Institution | OSAKA UNIVERSITY |
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Principal Investigator |
MIYOSHI Takashi OSAKA UNIVERSITY, GRADUATE SCHOOL OF ENGINEERING, PROFESSOR, 大学院・工学研究科, 教授 (00002048)
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| Co-Investigator(Kenkyū-buntansha) |
KIMURA Keiichi OSAKA UNIVERSITY, GRADUATE SCHOOL OF ENGINEERING, ASSOCIATE PROFESSOR, 大学院・工学研究科, 客員助教授
TAKAYA Yasuhiro OSAKA UNIVERSITY, GRADUATE SCHOOL OF ENGINEERING, ASSOCIATE PROFESSOR, 大学院・工学研究科, 助教授 (70243178)
高橋 哲 大阪大学, 大学院・工学研究科, 助手 (30283724)
島田 尚一 大阪大学, 大学院・工学研究科, 助教授 (20029317)
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| Project Period (FY) |
2001 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥46,930,000 (Direct Cost: ¥36,100,000、Indirect Cost: ¥10,830,000)
Fiscal Year 2003: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
Fiscal Year 2002: ¥21,320,000 (Direct Cost: ¥16,400,000、Indirect Cost: ¥4,920,000)
Fiscal Year 2001: ¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000)
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| Keywords | optical radiation pressure / nanotechnology / polishing process / CMP / planarization / laser trapping / silicon wafer / semiconductor |
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| Research Abstract |
This research aims to realize the planarization with the chemical mechanical polishing where the aggregated marks of fine particles in slurry are created with the optical radiation pressure induced by irradiated laser beam, and to process selective material removal intentionally in small projected areas on the VLS's circuit pattern.
In this paper, the considerations to create the aggregated marks by laser beam irradiation onto the surface of silicon wafer were investigated. Furthermore, new planarization method, which fills up the dimples with laser aggregated marks and polish the area as one surface, was proposed and attempted to obtain high planarity on trench-shaped uneven, surface which was processed by FIB (Focused Ion Beam) machining on the silicon wafer surface.
This proposed method indicates two unique points as follows ; (1) The aggregated marks are formed with laser irradiation on the surface of silicon wafer. The aggregated marks are made of fine particles in slurry. (2) After aggregated marks are formed and filled up at the recessed areas of surface of silicon wafer, this process is possible to realize high planarity on silicon wafer.
As a final result, the smooth surface of less than 1nmRq is obtained with the LAFP (Laser Aggregation Filling-up & Polishing) method, and the method has a high potential for planarization.
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