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Formation of Very Low Contact Resistance between Metal and Semiconductor using Semiconductor Structures with Ultra High Carrier Concentration

Research Project

Project/Area Number 13355013
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionTohoku University

Principal Investigator

MUROTA Junichi  Tohoku University, Research Institute of Electrical Communication, Professor, 電気通信研究所, 教授 (70182144)

Co-Investigator(Kenkyū-buntansha) MEGURO Toshiyasu  Tohoku University, Research Institute of Electrical Communication, Research Associate, 電気通信研究所, 助手 (50182150)
MATSUURA Takashi  Tohoku University, Research Institute of Electrical Communication, Assistant Professor, 電気通信研究所, 助教授 (60181690)
SAKURADA Masao  Tohoku University, Research Institute of Electrical Communication, Assistant Professor, 電気通信研究所, 助教授 (30271993)
Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥43,290,000 (Direct Cost: ¥33,300,000、Indirect Cost: ¥9,990,000)
Fiscal Year 2003: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2002: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2001: ¥31,980,000 (Direct Cost: ¥24,600,000、Indirect Cost: ¥7,380,000)
KeywordsIV group semiconductor / impurity doping / atomic layer / contact resistance / CVD / SiGeC / P / B / B / IV族半導体結晶 / CDV
Research Abstract

In this research, heavily impurities (B and P) were doped in SiGeC heterostructure using atomically controlled low-pressure chemical vapor deposition (LP-CVD) in order to form a very low contact resistance between metal and semiconductor.
Formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases (PH_3 and B_2H_6) on Si(100) and Ge(100) have been achieved using atomically controlled ultraclean LP-CVD. Heavily impurity doped epitaxial Si films with the impurity concentration of over 10^<21>cm^<-3> are formed by an atomic-layer doping technique. By growing the multi-layer P-doped epitaxial Si with a high carrier concentration at a very low temperature of 450℃ on the P-doped SiGe films, very low contact resistivity of 6.5x10^<-8>Ωcm^2 between W and the Si film has been obtained. For the B-doped SiGeC films with a high carrier concentration, very low contact resistivity is obtained to be 3.8x10^<-8>Ωcm^2 between W and the Si film, 3x10^8<-8>Ωcm^2 between Ti and the Si film.
This heavily impurity-doping technique promises to achieve very low contact resistance between metal and semiconductor for high performance semiconductor devices.

Report

(4 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (185 results)

All Other

All Publications (185 results)

  • [Publications] T.Watanabe et al.: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J.Vac.Sci.Technol.A.. Vol.19,No.4,Part II. 1907-1911 (2001)

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  • [Publications] D.Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H_2 Gas System"Jpn.J.Appl.Phys.. Vol.40,Part 1. 2697-2700 (2001)

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  • [Publications] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma"J.Electrochem.Soc.. Vol.148,No.8. G420-G423 (2001)

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  • [Publications] 室田淳一 他: "CVD法によるSi_<1-x-y>Ge_xC_yエピタキシャル成長とドーピング制御"応用物理学会誌. 第70巻,第9号. 1082-1086 (2001)

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  • [Publications] Y.Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH_3 and SiH_4"J.Phys.IV France.. Vol.11,Pr3. 255-260 (2001)

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  • [Publications] T.Tsuchiya et al.: "Low-Frequency Noise in Si_<1-x>Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors"Jpn.J.Appl.Phys.. Vol.40,Part 1. 5290-5293 (2001)

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  • [Publications] Y.Shimamune et al.: "Doping and Electrical Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France. D-X,3 (2001)

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  • [Publications] M.Fujiu et al.: "Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)"2001 Spring Meeting, The European Materials Research Society. D-VIII/P9 (2001)

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      2003 Final Research Report Summary
  • [Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society. D-V/P20 (2001)

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  • [Publications] J.Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance Site-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. 51 (2001)

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  • [Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors (Keynote)"9th European Conference on Applications of Surface and Interface Analysis (SIA). 20 (2001)

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  • [Publications] T.Seino et al.: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis (SIA). 193 (2001)

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      2003 Final Research Report Summary
  • [Publications] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis (SIA). 194 (2001)

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  • [Publications] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)

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  • [Publications] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)

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  • [Publications] Y.Hashiba et al.: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)

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  • [Publications] D.Muto et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium. 179 (2001)

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  • [Publications] T.Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium. 229 (2001)

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      2003 Final Research Report Summary
  • [Publications] Y.C.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.83-Abs.84 (2001)

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      2003 Final Research Report Summary
  • [Publications] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.85-Abs.86 (2001)

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  • [Publications] D.Kruger et al.: "Transient Processes and Structural Transformations in Si and Si_xGe_<1-x> Layers During Oxygen Implantation and Sputtering"13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII). 108 (2001)

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      2003 Final Research Report Summary
  • [Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si_<1-x>Ge_x CVD"Materials Science and Engineering B. Vol.89,Issues 1-3. 120-124 (2002)

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      2003 Final Research Report Summary
  • [Publications] T.Seino et al.: "Thermal Effects in Atomic-Order Nitridation of Si by a Nitrogen Plasma"J.Vac.Sci.Technol.B. Vol.20. 1431-1435 (2002)

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  • [Publications] T.Seino et al.: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"Surf.Interface Anal.. Vol.34. 451-455 (2002)

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  • [Publications] J.Murota et al.: "Atomically controlled processing for group IV semiconductors"Surf.Interface Anal.. Vol.34. 423-431 (2002)

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      2003 Final Research Report Summary
  • [Publications] O.Jintsugawa et al.: "Thermal nitridation of ultrathin SiO_2 on Si by NH_3"Surf.Interface Anal.. Vol.34. 456-459 (2002)

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      2003 Final Research Report Summary
  • [Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors"Proceedings of the 6th Symp. on Atomic-scale Surface and Interface Dynamics (The Japan Society for the Promotion of Science). 107-115 (2002)

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      2003 Final Research Report Summary
  • [Publications] T.Seino et al.: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"Proceedings of the 6th Symp. on Atomic-scale Surface and Interface Dynamics (The Japan Society for the Promotion of Science). 145-149 (2002)

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      2003 Final Research Report Summary
  • [Publications] Y.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"Proceedings of the 6th Symp. on Atomic-scale Surface and Interface Dynamics (The Japan Society for the Promotion of Science). 151-154 (2002)

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  • [Publications] Y.Jeong et al.: "Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100) and its Thermal Stability"Proceedings of the 19th International Symposium on Silicon Material Science and Technology, 201th Meeting of the Electrochemical Society. Vol.2002-2. 287-296 (2002)

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  • [Publications] M.Mori et al.: "Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using an ECR Plasma"201st Meeting of The Electrochemical Society. Abs.No.402 (2002)

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  • [Publications] D.Lee et al.: "Fabrication of 0.1 μm SiGe-Channel pMOSFETs with In-Situ B-Doped Site Source/Drain"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors. Abs.No.VIII-05 (2002)

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  • [Publications] J.Noh et al.: "Contact Resistivity between W and Heavily Doped Si_<1-x-y>Ge_xC_y Epitaxial Film"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors. Abs.No.VI-07 (2002)

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  • [Publications] H.Shim et al.: "Work Function of Impurity-Doped Poly-Si_<1-x-y>Ge_xC_y Film Deposited by Ultraclean Low-Pressure CVD"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors. Abs.No.IV-10 (2002)

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  • [Publications] M.Nomura et al.: "Boron Atomic-Layer Doping in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors. Abs.No.VI-09 (2002)

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  • [Publications] H.-S.Cho et al.: "Side-Wall Protection by B in Poly-Si and Si_<1-x>Ge_x in Gate Etching"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors. Abs.No.VI-05 (2002)

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  • [Publications] K.Takahashi et al.: "Si Epitaxial Growth on SiH_3CH_3 Reacted Ge(100) and Intermixing between Si and Ge during Heat Treatment"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors. Abs.No.IV-12 (2002)

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  • [Publications] D.Lee et al.: "SiGe-Channel 0.1-μm pMOSFETs with Super Self-Aligned, Ultra-Shallow Junction Formed by Selective In-Situ B-Doped Site CVD"60th Annual Device Research Conference (DRC). 83-84 (2002)

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  • [Publications] J.Murota et al.: "Atomically Controlled Heterostructure Growth of Group IV Semiconductors"3rd "Trends in NanoTechnology" International Conference (TNT2002). 377 (2002)

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  • [Publications] J.Murota et al.: "SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices (Invited Paper)"Meeting Abstracts of International Semiconductor Technology Conference (ISTC 2002), The Electrochemical Society. Abs.No.53 (2002)

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  • [Publications] D.Lee et al.: "0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers"Extended Abstracts of the 2002 Int.Conf. on Solid State Devices and Materials (SSDM 2002). 764-765 (2002)

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  • [Publications] D.Muto et al.: "Atomically Controlled Si Epitaxial Growth in Ar Plasma Enhanced Silane Reaction"Fourth International Symposium on Control of Semiconductor Interfaces. Abs.No.P4-2 (2002)

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  • [Publications] D.Lee et al.: "Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"First International SiGe Technology and Device Meeting (ISTDM 2003). 17-18 (2003)

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  • [Publications] J.Noh et al.: "Relationship between Total Impurity(B or P) and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment"First International SiGe Technology and Device Meeting (ISTDM 2003). 165-166 (2003)

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  • [Publications] H.-S.Cho et al.: "Etching Characteristics of Impurity-Doped Si_<1-x>Ge_X Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma"First International SiGe Technology and Device Meeting (ISTDM 2003). 181-182 (2003)

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  • [Publications] Y.C.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_4"First International SiGe Technology and Device Meeting (ISTDM 2003). 243-244 (2003)

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  • [Publications] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique"First International SiGe Technology and Device Meeting (ISTDM 2003). 247-248 (2003)

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  • [Publications] M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting (ISTDM 2003). 249-250 (2003)

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  • [Publications] D.Muto et al.: "Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth"First International SiGe Technology and Device Meeting (ISTDM 2003). 251-252 (2003)

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  • [Publications] 室田淳一 他: "SiGe系デバイスの微細化と原子制御プロセス"将来加工技術第136委員会第29回研究会(合同研究会). 18-23 (2003)

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  • [Publications] D.Muto et al.: "Atomically Controlled Silane Reaction on Si(100) Using Ar Plasma Irradiation without Substrate Heating"3rd Int.Conf. on SiGe(C) Epitaxy and Heterostructures (ICSI3). 59-61 (2003)

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  • [Publications] S.Takehiro et al.: "Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formation by Selective B-Doped SiGe CVD"3rd Int.Conf. on SiGe(C) Epitaxy and Heterostructures (ICSI3). 179-181 (2003)

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  • [Publications] J.Murota et al.: "Atomically Controlled Processing for SiGe-Based Ultimate-Small Devices (Invited Paper)"22nd Electronic Materials Symp. (EMS-22). 39-42 (2003)

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  • [Publications] Y.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"Rapid Thermal Processing for Future Semiconductor Devices. 139-144 (2003)

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      2003 Final Research Report Summary
  • [Publications] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"Rapid Thermal Processing for Future Semiconductor Devices. 145-150 (2003)

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      2003 Final Research Report Summary
  • [Publications] Y.Jeong et al.: "Atomic-Layer Doping in Si by Alternately Supplied NH_3 and SiH_4"Appl.Phys.Lett.. Vol.82. 3472-3474 (2003)

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      2003 Final Research Report Summary
  • [Publications] K.Takahashi et al.: "Si Epitaxial Growth on SiH_3CH_3 Reacted Ge(100) and Intermixing between Si and Ge during Heat Treatment"Appl.Surf.Sci.. Vol.212-213. 193-196 (2003)

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      2003 Final Research Report Summary
  • [Publications] M.Sakuraba et al.: "Si Atomic Layer-by-Layer Epitaxial Growth Process Using Alternate Exposure of Si(100) to SiH_4 and to Ar Plasma"Appl.Surf.Sci.. Vol.212-213. 197-200 (2003)

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      2003 Final Research Report Summary
  • [Publications] H.Shim et al.: "Work Function of Impurity-Doped Polycrystalline Si_<1-x-y>Ge_xC_y Film Deposited by Ultraclean Low-Pressure CVD"Appl.Surf.Sci.. Vol.212-213. 209-212 (2003)

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      2003 Final Research Report Summary
  • [Publications] J.Noh et al.: "Contact Resistivity between Tungsten and Impurity (P and B)-Doped Si_<1-x-y>Ge_xC_y Epitaxial Layer"Appl.Surf.Sci.. Vol.212-213. 679-683 (2003)

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  • [Publications] T.Kanaya et al.: "W Delta Doping in Si(100) Using Ultraclean Low-Pressure CVD"Appl.Surf.Sci.. Vol.212-213. 684-688 (2003)

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      2003 Final Research Report Summary
  • [Publications] J.Noh et al.: "Relationship between Impurity (B or P) and Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment"Appl.Surf.Sci.. Vol.224. 77-81 (2004)

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      2003 Final Research Report Summary
  • [Publications] Y.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_4"Appl.Surf.Sci.. Vol.224. 197-201 (2004)

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    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique"Appl.Surf.Sci.. Vol.224. 202-205 (2004)

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      2003 Final Research Report Summary
  • [Publications] M.Fujiu et al.: "Effect of Carbon on the Thermal Stability of a Si Atomic Layer on Ge(100)"Appl.Surf.Sci.. Vol.224. 206-209 (2004)

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    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Muto et al.: "Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth"Appl.Surf.Sci.. Vol.224. 210-214 (2004)

    • Description
      「研究成果報告書概要(和文)」より
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      2003 Final Research Report Summary
  • [Publications] D.Lee et al.: "Fabrication of 0.12μm pMOSFETs on High Ge Fraction Si/Si_<1-x>Ge_x/Si(100) Heterostructure with Ultrashallow Source/Drain Formed using B-Doped SiGe CVD"Appl.Surf.Sci.. Vol.224. 254-259 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Murota et al.: "Atomically Controlled Technology for Future Si-Based Devices"Solid State Phenomena.. Vol.95-96. 607-616 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Watanabe et al.: "Atomic-Order Thermal Nitridation of Si (100) and Subsequent Growth of Si"J.Vac.Sci.Technol.A. Vol.19, No.4, Part II. 1907-1911 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Lee et al.: "Phosphorus Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth by Low-Pressure Chemical Vapor Deposition Using a SiH_4-GeH_4-CH_3SiH_3-PH_3-H?2 Gas System"Jpn.J.Appl.Phys.. Vol.40, Part1, No.4B. 2697-2700 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Kanetsuna et al.: "Surface Adsorption and Reaction of Chlorine on Impurity-Doped Single Crystalline Si Using Electron Cyclotron Resonance Plasma"J.Electrochem.Soc.. Vol.148, No.8. G420-G423 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
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      2003 Final Research Report Summary
  • [Publications] 室田淳一 他: "CVD法によるSi_<1-x-y>Ge_xC_yエピタキシャル成長とドーピング制御"応用物理学会. 第70巻,第9号. 1082-1086 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Shimamune et al.: "Epitaxial Growth of Heavily P-doped Si Films at 450℃ by Alternately Supplied PH_3 and SiH_4"J.Phys.IV France. Vol.11, Pr3. 255-260 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Tsuchiya et al.: "Low-Frequency Noise in Si_<1-x>Ge_x p-Channel Metal Oxide Semiconductor Field-Effect Transistors"Jpn.J.Appl.Phys.. Vol.40, Part 1, No.9A. 5290-5293 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Shimamune et al.: "Doping and Electrical Characteristics of Si Films Epitaxially Grown at 4501℃ by Alternately Supplied PH_3 and SiH_4"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France, June 5-8, 2001 Abs.. No.D-X,3.

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Fujiu et al.: "Influence of Carbon on Thermal Stability of Silicon Atomic Layer Formed on Ge(100)"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France, June 5-8, Abs. No.D-VIII/P9. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society, Strasbourg, France, June 5-8, Abs. No.D-V/P20. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics : The Nano Millennium, Ile de Bendor, France, June 25-29. 51 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semi-conductors (Keynote)"9th European Conference on Applications of Surface and Interface Analysis, Avignon, France, Sep.30-Oct.5, Abs. No.MO-KL-MOE. 20 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Seino et al.: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis, Avignon, France, Sep.30-Oct.5, Abs. No.MO-KL-MOE07. 193 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis, Avignon, France, Sep.30-Oct.5, Abs. No.MO-KL-MOE08. 194 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
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      2003 Final Research Report Summary
  • [Publications] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"Proceedings of the Sixth International Conference on Solid-State and Integrated-Circuit Technology, Oct.22-25, Shanghai, China. Vol.1. 525-530 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium, San Francisco, California, Oct.29-Nov.2. PS-MoP10. 53 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Hashiba et al.: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature"AVS 48th International Symposium, San Francisco, California, Oct.29-Nov.2, 2001. LPCVDSS-SC-TuP2. 135

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Muto et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium, San Francisco, California, Oct.29-Nov.2. EL-WeA3. 179 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
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      2003 Final Research Report Summary
  • [Publications] T.Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium, San Francisco, California, Oct.29-Nov.2. PH-ThA7. 229 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.C.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"Proceedings of the 2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP2001), Ise Shima Royal Hotel, Mie, Japan, Nov.14-16. 83-84 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices (RTP2001), Ise Shima Royal Hotel, Mie, Japan, Nov.14-16. 85-86 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
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      2003 Final Research Report Summary
  • [Publications] D.Kruger et al.: "Transient Processes and Structural Transformations in Si and Si_xGe_<1-x> Layers During Oxygen Implantation and Sputtering"13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII), Nara, Japan, Nov.11-16. AA1. 108 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction in MOSFETs Using Selective Si_<1-x>Ge_x CYD"Mat.Sci.Eng.B. Vol.89/1-3. 120-124 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Seino et al.: "Thermal Effects in Atomic-Order Nitridation of Si by a Nitrogen Plasma"J.Vac.Sci.Technol.B, July/August. Vol.20, No4. 1431-1435 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
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      2003 Final Research Report Summary
  • [Publications] T.Seino et al.: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"Surface and Interface Anal.. Vol.34. 451-455 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
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      2003 Final Research Report Summary
  • [Publications] J.Murota et al.: "Atomically controlled processing for group IV semi-conductors"Surface and Interface Anal.. Vol.34. 423-431 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] O.Jintsugawa et al.: "Thermal nitridation of ultrathin SiO_2 on Si by NH_3"Surface and Interface Anal.. Vol.34. 456-459 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semi-conductors"Proceedings of the 6th Symp.on Atomic-scale Surface and Interface Dynamics (The Japan Society for the Promotion of Science), Tokyo, March 1. 107-115 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Seino et al.: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"Proceedings of the 6th Symp.on Atomic-scale Surface and Interface Dynamics (The Japan Society for the Promotion of Science), Tokyo, March 1. 145-149 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"Proceedings of the 6th Symp.on Atomic-scale Surface and Interface Dynamics (The Japan Society for the Promotion of Science), Tokyo, March 1. 151-154 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Jeong et al.: "Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100) and its Thermal Stability"Proceedings of the 19th International Symposium on Silicon Material Science and Technology, Proceeding Volume 2002-2 pp.28-296 201st Meeting of the Electrochemical Society, Philadelphia, PA, May 12-17, Abs.. No.574. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
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      2003 Final Research Report Summary
  • [Publications] M.Mrin et al.: "Si Epitaxial Growth on Atomic-Order Nitrided Si(100) Using an ECR Plasma"201st Meeting of the Electrochemical Society, Philadelphia, PA, May 12-17, Abs.. No.402. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Lee et al.: "Fabrication of 0.1 μm SiGe-Channel pMOSFETs with In-Situ B-Doped SiGe Source/Drain"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, Abs.. No.VIII-05. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Noh et al.: "Contact Resistivity between W and Heavily Doped Si_<1-x-y>Ge_xC_y Epitaxial Film"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, Abs.. No.VI-07. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Shim et al.: "Work Function of Impurity-Doped Poly-Si_<1-x-y>Ge_xC_y Film Deposited by Ultraclean Low-Pressure CVD"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, Abs.. No.IV-10. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Nomura et al.: "Boron Atomic-Layer Doping in Low-Temperature Si Epitaxial Growth on Si(100) by Ultraclean Low-Pressure Chemical Vapor Deposition"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, Abs.. No.VI-09. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Cho et al.: "Side-Wall Protection by B in Poly-Si and Si_<1-x>Ge_x in Gate Etching"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, Abs.. No.VI-05. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Takahashi et al.: "Si Epitaxial Growth on SiH_3CH_3 Reacted Ge(100) and Intermixing between Si and Ge during Heat Treatment"2nd Int.Workshop on New Group IV (Si-Ge-C) Semiconductors : Control of Properties and Applications to Ultrahigh Speed and Opto-Electronic Devices (SiGeC Workshop), Kofu, Japan, June 2-4, Abs.. No.IV-12. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
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      2003 Final Research Report Summary
  • [Publications] D.Lee et al.: "SiGe-Channel 0.1-μm pMOSFETs with Super Self-Aligned Ultra-Shallow Junction Formed by Selective In-Situ B-Doped SiGe CVD"60th Annual Device Research Conference (DRC), UC Santa Barbara, California, June 24-26. 83-84 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Murota et al.: "Atomically Controlled Heterostructure Growth of Group IV Semiconductors"3rd "Trends in NanoTechnology" International Conference (TNT2002), the City of Santiago de Compostela (Spain), September 9-13. 377 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Murota et al.: "SiGe Epitaxial CVD Technology for Si-Based Ultras-mall Devices (Invited Paper)"2nd Int.ECS Semiconductor Technology Conf.(ISTC), The Electro-chem.Soc., Tokyo, Japan, September 11-14, Abs.. No.53. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Lee et al.: "0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers"2002 Int.Conf.on Solid State Devices and Materials (SSDM 2002), Nagoya, Japan, September 17-19. 764-765 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Muto et al.: "Atomically Controlled Si Epitaxial Growth in Ar Plasma Enhanced Silane Reaction"Fourth International Symposium on Control of Semiconductor Inter-faces, Karuizawa, Japan, October 21-25, Abs.. No.P4-2. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Lee et al.: "Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, Abs.. 17-18 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Noh et al.: "Relationship between Total Impurity(B or P) and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment"First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, Abs.. 165-166 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.-S.Cho et al.: "Etching Characteristics of Impurity-Doped Si_<1x>Ge_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma"First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, Abs.. 181-182 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.C.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_4"First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, Abs.. 243-244 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique"First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, Abs.. 247-248 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, Abs.. 249-250 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Muto et al.: "Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth"First International SiGe Technology and Device Meeting (ISTDM 2003), Nagoya, Japan, Jan.15-17, Abs.. 251-252 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
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      2003 Final Research Report Summary
  • [Publications] 室田淳一 他: "SiGe系デバイスの微細化と原子制御プロセス"将来加工技術第136委員会第29回研究会(合同研究会). 18-23 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Muto et al.: "Atomically Controlled Silane Reaction on Si(100) Using Ar Plasma Irradiation without Substrate Heating"Third International Conference on SiGe(C) Epitaxy an Heterostructures (ICSI3), Santa Fe, NM, March 9-12, Abs.. 59-61 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] S.Takehiro et al.: "Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formation by Selective B-Doped SiGe CVD"Third International Conference on SiGe(C) Epitaxy an Heterostructures (ICSI3), Santa Fe, NM, March 9-12, Abs.. 179-181 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Murota et al.: "Atomically Controlled Processing for SiGe-Based Ultimate-Small Devices (Invited Paper)"22nd Electronic Materials Symp. (EMS-22), Biwako, July 2-4. 39-42 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Jeong et al.: "Atomic-Layer Doping in Si by Alternately Supplied NH_3 and SiH_4"Appl.Phys.Lett. Vol.82, No.20. 3472-3474 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(100) Surface in SiH_4 Reaction"Rapid Thermal Processing for Future Semiconductor Devices. 139-144 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"Rapid Thermal Processing for Future Semiconductor Devices. 145-150 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.Takahashi et al.: "Si Epitaxial Growth on SiH_3CH_3 Reacted Ge(100) and Intermixing between Si and Ge during Heat Treatment"Appl.Surf.Sci.. Vol.212-213. 193-196 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Sakuraba et al.: "Si Atomic Layer-by-Layer Epitaxial Growth Process Using Alternate Exposure of Si(100) to SiH_4 and to Ar Plasma"Appl.Surf.Sci.. Vol.212-213. 197-200 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Shim et al.: "Work Function of Impurity-Doped Polycrystalline Si_<1-x-y>Ge_xC_y Film Deposited by Ultraclean Low-Pressure CVD"Appl.Surf.Sci.. Vol.212-213. 209-212 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Noh et al.: "Contact Resistivity between Tungsten and Impurity (P and B)-Doped Si_<1-x-y>Ge_xC_y Epitaxial Layer"Appl.Surf.Sci.. Vol.212-213. 679-683 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Kanaya et al.: "W Delta Doping in Si(100) Using Ultraclean Low-Pressure CVD"Appl.Surf.Sci.. Vol.212-213. 684-688 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Noh et al.: "Relationship between Impurity (B or P) and Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment"Appl.Surf.Sci.. Vol.224. 77-81 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SH_4"Appl.Surf.Sci.. Vol.224. 197-201 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique"Appl.Surf.Sci.. Vol.224. 202-205 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Fujiu et al.: "Effect of Carbon on the Thermal Stability of a Si Atomic Layer on Ge(100)"Appl.Surf.Sci.. Vol.224. 206-209 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Muto et al.: "Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth"Appl.Surf.Sci.. Vol.224. 210-214 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Lee et al.: "Fabrication of 0.12μm pMOSFETs on High Ge Fraction Si/Si_<1-x->Ge_x/Si(100) Heterostructure with Ultrashallow Source/Drain Formed using B-Doped SiGe CVD"Appl.Surf.Sci.. Vol.224. 254-259 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] J.Murota et al.: "Atomically Controlled Technology for Future Si-Based Devices"Solid State Phenomena. Vol.95-96. 607-616 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Jeong et al.: "Atomic-Layer Doping in Si by Alternately Supplied NH_3 and SiH_4"Appl.Phys.Lett.. Vol.82. 3472-3474 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] K.Takahashi et al.: "Si Epitaxial Growth on SiH_3CH_3 Reacted Ge(100) and Intermixing between Si and Ge during Heat Treatment"Appl.Surf.Sci.. Vol.212-213. 193-196 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] M.Sakuraba et al.: "Si Atomic Layer-by-Layer Epitaxial Growth Process Using Alternate Exposure of Si (100) to SiH_4 and to Ar Plasma"Appl.Surf.Sci.. Vol.212-213. 197-200 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Shim et al.: "Work Function of Impurity-Doped Polycrystalline Si_<1-x-y>Ge_xC_y Film Deposited by Ultraclean Low-Pressure CVD"Appl.Surf.Sci.. Vol.212-213. 209-212 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] J.Noh et al.: "Contact Resistivity between Tungsten and Impurity(P and B)-Doped Si_<1-x-y>Ge_xC_y Epitaxial Layer"Appl.Surf.Sci.. Vol.212-213. 679-683 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Kanaya et al.: "W Delta Doping in Si(100) Using Ultraclean Low-Pressure CVD"Appl.Surf.Sci.. Vol.212-213. 684-688 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] J.Noh et al.: "Relationship between Impurity (B or P) and Carrier Concentration in SiGe(C) Epitaxial Film Produced by Thermal Treatment"Appl.Surf.Sci.. Vol.224. 77-81 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Y.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100) by Alternately Supplied NH_3 and SiH_4"Appl.Surf.Sci.. Vol.224. 197-201 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100) by Multiple Atomic-Layer Doping Technique"Appl.Surf.Sci.. Vol.224. 202-205 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] M.Fujiu et al.: "Effect of Carbon on the Thermal Stability of a Si Atomic Layer on Ge(100)"Appl.Surf.Sci.. Vol.224. 206-209 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] D.Muto et al.: "Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth"Appl.Surf.Sci.. Vol.224. 210-214 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] D.Lee et al.: "Fabrication of 0.12-μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"Appl.Surf.Sci.. Vol.224. 254-259 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] J.Murota et al.: "Atomically controlled processing for group IV semiconductors"Surf. Interface Anal.. Vol.34. 423-431 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] O.Jintsugawa et al.: "Thermal nitridation of ultratbin SiO_2 on Si by NH_3"Surf. Interface Anal.. Vol.34. 456-459 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.C.Jeong et al.: "Atomic-Layer Doping of N in Si Epitaxial Growth on Si(100)and its Thermal Stability"Proceedings of the 19th International Symposium on Silicon Material Science and Technology, 201th Meeting of the Electrochemical Society. 287-296 (2002)

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      2002 Annual Research Report
  • [Publications] M.Mori et al.: "Si Epitaxial Growth on Atomic-Order Nitrided Si(100)Using an ECR Plasma"201st Meeting of The Electrochemical Society. 402 (2002)

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      2002 Annual Research Report
  • [Publications] J.Murota et al.: "Atomically Controlled Heterostructure Growth of Group IV Semiconductors"3rd"Trends in Nano Technology"International Conference(TNT 2002). 377 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] J.Murota et al.: "SiGe Epitaxial CVD Technology for Si-Based Ultrasmall Devices(Invited Paper)"Meeting Abstracts of International Semiconductor Technology Conference (ISTC 2002), The Electrochemical Society. 53 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] D.Lee et al.: "0.1μm pMOSFETs with SiGe-Channel and B-Doped SiGe Source/Drain Layers"Extended Abstracts of the 2002 Int. Conf. on Solid State Devices and Materials(SSDM 2002). 764-765 (2002)

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      2002 Annual Research Report
  • [Publications] D.Lee et al.: "Fabrication of 0.12μm SiGe-Channel MOSFET Containing High Ge Fraction with Ultrashallow Source/Drain Formed by Selective B-Doped SiGe CVD"First International SiGe Technology and Device Meeting(ISTDM 2003). 17-18 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] J.Noh et al.: "Relationship between Total Impurity(B or P)and Carrier Concentrations in SiGe Epitaxial Film Produced by the Thermal Treatment"First International SiGe Technology and Device Meeting(ISTDM 2003). 165-166 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.-S.Cho et al.: "Etching Characteristics of Impurity-Doped Si_<1-x>Ge_x Epitaxial Films Using Electron-Cyclotron-Resonance Chlorine Plasma"First International SiGe Technology and Device Meeting(ISTDM 2003). 181-182 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.C.Jeong et al.: "Epitaxial Growth of N Delta Doped Si Films on Si(100)by Alternately Supplied NH_3 and SiH_4"First International SiGe Technology and Device Meeting(ISTDM 2003). 243-244 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Shimamune et al.: "Formation of Heavily P Doped Si Epitaxial Film on Si(100)by Multiple Atomic-Layer Doping Technique"First International SiGe Technolgy and Device Meeting(ISTDM 2003). 247-248 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Fujiu et al.: "Carbon Effect on Thermal Stability of Si Atomic Layer on Ge(100)"First International SiGe Technology and Device Meeting(ISTDM 2003). 249-250 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] D.Muto et al.: "Ar Plasma Irradiation Effects in Atomically Controlled Si Epitaxial Growth"First International SiGe Technology and Device Meeting(ISTDM 2003). 251-252 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] D.Muto et al.: "Atomically Controlled Silane Reaction on Si(100)Using Ar Plasma Irradiation without Substrate Heating"3rd Int. Conf. on SiGe(C)Epitaxy and Heterostructures(ICSI3). 59-61 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Takehiro et al.: "Characterization of High Ge Fraction SiGe-Channel MOSFET with Ultrashallow Source/Drain Formation by Selective B-Doped SiGe CVD"3rd Int. Conf. on SiGe(C)Epitaxy and Heterostructures(ICSI3). 179-181 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society. D-V/P20 (2001)

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      2001 Annual Research Report
  • [Publications] J.Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. 51 (2001)

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      2001 Annual Research Report
  • [Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA). 20 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T. Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis (SIA). 193 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis (SIA). 194 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Hashiba: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Yamashiro et al.: "Super Self-Aligned Technology of Ultra-Shallow Junction MOSFETs Using Selective Si_<1-x>Ge_x"2001 Spring Meeting, The European Materials Research Society. D-V/P20 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] J.Murota et al.: "Atomically Precise Control of Heterointerfaces for High-Performance SiGe-Based Heterodevices"2001 Advanced Research Workshop, Future Trends in Microelectronics. 51 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] J.Murota et al.: "Atomically Controlled Processing for Group IV Semiconductors (Keynote Lecture)"9th European Conference on Applications of Surface and Interface Analysis (SIA). 20 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Seino: "Atomic-Order Nitridation of SiO_2 by a Nitrogen Plasma"9th European Conference on Applications of Surface and Interface Analysis (SIA). 193 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] O.Jintsugawa et al.: "Thermal Nitridation of Ultrathin SiO_2 on Si by NH_3"9th European Conference on Applications of Surface and Interface Analysis (SIA). 194 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] J.Murota et al.: "CVD SiGe(C) Epitaxial Growth and Its Application to MOS Devices (Invited Paper)"The Sixth International Conference on Solid-State and Integrated-Circuit Technology. 525-530 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Seino et al.: "Atomic-Order Plasma Nitridation of Ultrathin Silicon Dioxide Films"AVS 48th International Symposium. 53 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Hashiba: "Growth Characteristics of Si_<1-x-y>Ge_xC_y on Si(100) and SiO_2 in Ultraclean Low-Temperature LPCVD"AVS 48th International Symposium. 135 (2001)

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      2001 Annual Research Report
  • [Publications] D. Muto et al.: "Self-Limited Layer-by-Layer Growth of Si by Alternated SiH_4 Supply and Ar Plasma Exposure"AVS 48th International Symposium. 179 (2001)

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      2001 Annual Research Report
  • [Publications] T Matsuura et al.: "Application of Photosensitive Methylsilsesquiazane(MSZ) to Lithographic Fabrication of Three Dimensional Periodic Structures"AVS 48th International Symposium. 229 (2001)

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      2001 Annual Research Report
  • [Publications] Y.C.Jeong et al.: "Si Epitaxial Growth on the Atomic-Order Nitrided Si(1OO) Surface in SiH_4 Reaction"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.3 (2001)

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      2001 Annual Research Report
  • [Publications] Y.Shimamune et al.: "Heavy Doping Characteristics of Si Films Epitaxially Grown at 450℃ by Alternately Supplied PH_3 and SiH_4"2001 International Conference on Rapid Thermal Processing for Future Semiconductor Devices. Abs.8.4 (2001)

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      2001 Annual Research Report
  • [Publications] D.Kruger et al.: "Transient Processes and Structural Transformations in Si and Si_xGe_<1-x> Layers During Oxygen Implantation and Sputtering"13th International Conference on Secondary Ion Mass Spectrometry and Related Topics (SIMS XIII). 108 (2001)

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      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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