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Development of Silicon-Based Surface-Emitting Ballistic Electron Source and Its Application to Flat Panel Display

Research Project

Project/Area Number 13355016
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field 電子デバイス・機器工学
Research InstitutionTokyo University of Agriculture and Technology

Principal Investigator

KOSHIDA Nobuyoshi  Tokyo University of Agriculture and Technology, Faculty of Technology, Professor, 工学部, 教授 (50143631)

Co-Investigator(Kenkyū-buntansha) KOMODA Takuya  Matsushita Electric Works Co., Senior Researcher, 先行技術研究所, 主幹技師(研究職)
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥41,730,000 (Direct Cost: ¥32,100,000、Indirect Cost: ¥9,630,000)
Fiscal Year 2002: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
Fiscal Year 2001: ¥30,290,000 (Direct Cost: ¥23,300,000、Indirect Cost: ¥6,990,000)
KeywordsSilicon / Anodization / Nanocrystalline silicon / Ballistic electron / Cold electron emission / Poly-crystalline silicon film / Flat panel display / Solid-state light source / ポーラスシリコン / 高電界伝導 / 多重トンネル効果 / 面放出冷電子源 / 蛍光体励起
Research Abstract

To clarify the ballistic electron emission mechanism in nanocrystalline silicon (nc-Si) diodes and to develop a new flat panel display, fundamental studies have been conducted in terms of fabrication processing, carrier transport, and technological aspects for implementing information display. The results and significances are summarized as follows.
1. Stabilization of nc-Si ballistic emitter with a high efficiency
By introducing a technique for nanostructural control of nc-Si layer and optimizing the process parameters for electrochemical treatment, the stability of the ballistic emission under a dc operation has been significantly stabilized without affect on the efficiency. Also, the experimental and theoretical analyzes by picoseconds time-of-flight measurements and Monte-Carlo simulation, suggest that ballistic electrons are generated more efficiently in the nc-Si layer with a well controlled interfaces, and that the ballistic emission is due to a specific high-field carrier transpo … More rt in interconnected nc-Si particles.
2. Prototyping of a flat panel display
Using the above-mentioned electron emitter as an excitation source of a fluorescent screen placed at a vacuum spacing of 3.5 mm, a simple-matrix full-color flat panel display has been developed by polycrystalline silicon film technology. The emission image pattern of a proto-type simple-matrix 2.6 inches display of a 168(RGB)×126 pixels with a 50 μm pitch was sufficiently uniform with little cross talk due to the energetic and collimated electron emission in perpendicular to the device surface. The device also shows a sufficient performance for dynamic image display.
3. Further development of a new emissive display
The demonstrated availability of this device for low-temperature processing on glass substrates is very important for development of large-area flat-panel displays with high performances. As another application, it has also been demonstrated that generated ballistic electrons in nc-Si layers are useful for direct excitation of fluorescent films deposited on the nc-Si diode surface without ejecting into vacuum. This opens paths for novel solid-state surface-emitting light source and display. Less

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (39 results)

All Other

All Publications (39 results)

  • [Publications] N.Koshida, N.Matsumoto: "Fabrication and quantum properties of nanostructured silicon"Materials Science and Engineering. R40. 169-205 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N.Koshida et al.: "Photon, electron, and ultrasonic emission from nanocrystalline porous silicon"Materials Research Society Symposium Proc.. 737(In press). (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Nakajima et al.: "Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device"Applied Physics Letters. 81. 2472-2474 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Komoda et al.: "Development of a low-temperature process of ballistic surface-emitting display (BSD) on a glass substrate"Society for Information Display Digest of Technical Papers. 33. 1128-1131 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Nakajima et al.: "A solid-state light-emitting device based on excitation of ballistic electrons generated in nanocrystalline porous poly-silicon films"Japanese Journal of Applied Physics. 41. 2707-2709 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Ichihara et al.: "Development of ballistic electron cold cathode by a low-temperature processing of polycrystalline silicon films"Journal of Crystal Growth. 237-239. 1915-1919 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] B.Gelloz, N.Koshida: "Handbook of Luminescence, Display Materials, and Nanocomposites, Chapter V, Electroluminescence of nanocrystalline porous silicon devices"American Scientific Publishers(In press). (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N. Koshida and N. Matsumoto: "Fabrication and Quantum Properties of Nanostructured Silicon"Materials Sci. and Eng.. R19. 169-205 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y. Nakajima, A. Kojima, and N. Koshida: "Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device"Appl. Phys. Lett.. 81. 2472-2474 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y. Osaka, K. Kohno, H. Mizuno, and N. Koshida: "Physical properties of SiO2-doped Si films and electroluminescence in metal/SiO2-doped Si/p-Si diodes"Jpn. J. Appl. Phys.. 41. 7481-7486 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Kouichi Yamada, Kenji Goto, Yoshiki Nakajima, Nobuyoshi Koshida, and Hiroyuki Shinoda: "A Sensor Skin using Wire-Free Tactile Sensing Elements Based on Optical Connection"Proc. SICE 2002. 319-322 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N. Asamura, U. K. Saman Keerthi, T. Migita, N. Koshida, and H. Shinoda: "Intensifying Thermally Induced Ultrasound Emission"Proc. 19th Sensor Symposium, IEEJ, Tokyo. 477-482 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Komoda, Y. Honda, T. Ichihara, T. Hatai, Y. Takegawa, Y. Watabe, and K. Aizawa: "Development of a Low Temperature Process of Ballistic Electron Surface-Emitting Display (BSD) on a Glass Substrate"Soc. for Information Display Int. Symp., Digest of Technical Papers. 33. 1128-1131 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Ichihara, Y. Honda, K. Aizawa, T. Komoda and N.Koshida: "Development of ballistic electron cold cathode by a low temperature processing of polycrystalline silicon films"J. Crystal Growth. 237-239. 1915-1919 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y. Nakajima, A. Kojima, and N. Koshida: "A solid-state light-emitting device based on excitation of ballistic electrons generated in nanocrystalline porous poly-silicon films"Jpn. J. Appl. Phys.. 41. 2707-2709 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Migita and N. Koshida: "Transient and stationary characteristics of thermally induced ultrasonic emission from nanocrystalline porous silicon"Jpn. J. Appl. Phys.. 41. 2588-2590 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N. Koshida, A. Kojima, T. Migita, and Y. Nakajima: "Multi functional properties of nanocrystalline porous silicon as a quantum-confined material(invited)"Materials Sci. and Eng.. C724. 285-289 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] A. Kojima, X. Sheng, and N. Koshida: "Analyses of ballistic electron transport in nanocrystalline porous silicon"Mat. Res. Soc. Proc.. 638. F. 3. 3. 1-6 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Komoda, T. Ichihara, Y. Honda, K. Aizawa, and N. Koshida: "Ballistic Electron Surface-Emitting Cold Cathode by Porous Polycrystalline Silicon Film Formed on Glass Substrate (Invited)"Mat. Res. Soc. Proc.. 638. F. 4. 1. 1-12 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y. Nakajima, A. Kojima, and N. Koshida: "A Novel Solid-State Light-Emitting Device Based on Ballistic Electron Excitation"Mat. Res. Soc. Proc.. 638. F. 4. 2. 1-6 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y. Toriumi, M. Takahashi, and N. Koshida: "A Significant Change in Refractive Index of Nanocrystalline Porous Silicon Induced by Carrier Injection"Mat. Res. Soc. Proc.. 638. F. 8. 3. 1-6 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N. Koshida, J. Kadokura, M. Takahashi, and K. Imai: "Stabilization of Porous Silicon Electroluminescence by Surface Capping with Silicon Dioxide Films"Mat. Res. Soc. Proc.. 638. F. 13. 3. 1-6 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] A. Kojima and N. Koshida: "Evidence of enlarged drift length in nanocrystalline porous silicon layers by time-of-flight measurements"Jpn. J. Appl. Phys.. 40. 366-368 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Komoda, Y. Honda, T. Hatai, Y. Watabe, T. Ichihara, K. Aizawa, and N. Koshida: "Fabrication of ballistic electron surface-emitting display on glass substrates (Invited)"Soc. for Information Display Int. Symp., Digest of Technical Papers. 32. 188-191 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N. Asamura, T. Shinohara, Y. Tojo, N. Koshida, and H. Shinoda: "Necessary Spatial Resolution for Realistic Tactile Feeling Display"Proc. 2001 IEEE Int. Conf. on Robotics and Automation. 1851-1856 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N. Koshida, T. Migita, Y. Kishimoto, M. Fuchigami, and H. Shinoda: "Novel ultrasonic technology by nanocrystalline porous silicon (Invited)"Proc. Int. Electrochem. Soc. Symp.. PV2000-25. 326-332 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] N.Koshida, N.Matsumoto: "Fabrication and quantum properties of nanostyuctured silicon"Materials Science and Engineering R. 40. 169-205 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Koshida et al.: "Photon, electron, and ultrasonic emission from nanocrystalline porous silicon"Materials Research Society Symposium Proc.. 727(in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Nakajima, A.Kojima, N.Koshida: "Generation of ballistic electrons in nanocrystalline porous silicon layers and its application to a solid-state planar luminescent device"Applied Physics Letters. 81. 2472-2474 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Komoda et al.: "Development of a low-temperature process of ballistic electron surface-emitting display (BSD) on a glass substrate"Society for Information Display Digest of Technical Papers. 33. 1128-1131 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Nakajima et al.: "A solid-state light-emitting device based on excitation of ballistic electrons generated in nanocrystalline porous poly-si films"Japanese Journal of Applied Physics. 41. 2707-2709 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Ichihara et al.: "Development of ballistic electron cdd cathode by a low temperature processing of polycrystalline silicon films"Journal of Crystal Growth. 237-239. 1915-1919 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] B.Gelloz, N.Koshida: "Handbook of Luminescence, Display Materials, and Nonocomposites"Electroluminescence of nanocrystalline porous silicon devices (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Koshida: "Multifunctional properties of nanocrystalline porons silicon as a quantum-confined material(Invited)"Materials Sci. & Eng. C. 724. 285-289 (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Nakajima, A.Kojima, N.Koshida: "A solid-state light-emitting device based on excitation of ballistic electrons generated in nanocrystalline porons poly-silicon films"Jpn. J. Appl. Phys.. 41(in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Migita, N.Koshida: "Transient and stationary characteristics of thermally induced ultrasonic emission from nanocrystalline porons silicon"Jpn. J. App. Phys.. 41(in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Komoda, T.Ichihara, Y.Honda, K.Aizawa, N.Koshida: "Ballistic electron surface-emitling cold cathode by porons polycrystalline silicon film formed on glass substrate(Invited)"Materials Res. Soc. Symp. Proc.. 638. F.4.1.1-12 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y.Nakajima, A.Kojima, N.Koshida: "A novel solid-state light-emitting device based on ballistic electrons excitation"Materials Res. Soc. Symp. Proc.. 638. F.4.2.1-6 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Komoda, Y.Honda, T.Hatai, Y.Watabe, T.Ichihara, K.Aizawa, N.Koshida: "Fabrication of ballistic electron surface-emitling display on glass substrates(Invited)"Soc. Information Display, Digest of Tech. Papers. 32. 188-191 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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