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DEVELOPMENT OF NANO-CBN THIN FILM DEVICES WORKING AT HIGH-TEMPERATURES UNDER SEVERE CONDITIONS

Research Project

Project/Area Number 13355028
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Material processing/treatments
Research InstitutionTHE UNIVERSITY OF TOKYO

Principal Investigator

YOSHIDA Toyonobu  THE UNIVERSITY OF TOKYO, GRADUATE SCHOOL OF ENGINEERING, PROFESSOR, 大学院・工学系研究科, 教授 (00111477)

Co-Investigator(Kenkyū-buntansha) YAMAMOTO Tsuyohisa  THE UNIVERSITY OF TOKYO, GRADUATE SCHOOL OF FRONTIER SCIENCE, ASSOCIATE PROFESSOR, 大学院・新領域創成科学研究科, 助教授 (20220478)
KAMBARA Makoto  THE UNIVERSITY OF TOKYO, GRADUATE SCHOOL OF ENGINEERING, RESEARCH ASSOCIATE, 大学院・工学系研究科, 助手 (80359661)
Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥50,310,000 (Direct Cost: ¥38,700,000、Indirect Cost: ¥11,610,000)
Fiscal Year 2003: ¥13,780,000 (Direct Cost: ¥10,600,000、Indirect Cost: ¥3,180,000)
Fiscal Year 2002: ¥20,150,000 (Direct Cost: ¥15,500,000、Indirect Cost: ¥4,650,000)
Fiscal Year 2001: ¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
KeywordsCUBIC BORON NITRIDE THIN FILMS / ELECTRONIC PROPERTIES / HIGH TEMPERATURE ELECTRONICS / N TYPE DOPINGS / WIDE BANDGAP SEMICONDUCTOR / VISCO-ELASTICITY / RECTIFICATION CHARACTERISTICS / BORON NITRIDE NANO ARRAY / ドーピング / ワイドギャップ / 半導体特性 / ブラズマCVD / スパッタリング / イオンインプランテーション / 臨界損傷
Research Abstract

Increasing attention has been paid to the semiconductor devices that can work at high temperature. These devices will be applied to the control units for aircraft jet engines and giant power generators at higher operating temperatures, offering more efficient and reliable performances as the total system. Semiconductors with wide bandgap and high thermal conductivity can realize these applications in nature and GaN, SiC and Diamonds are listed as good candidates by many researchers. Among these, cubic boron nitride (cBN) has the widest bandgap in III-V and IV- group semiconductors as well as high chemical stability and thermal conductivity, and hence is considered to be the most suitable material for these applications. About 10 years ago, we succeeded to deposit such cBN thin films both by ICP-CVD and sputtering methods. Since then, we have been recognized as one of the leading groups. Based firmly on this proved track records in this field, important findings and advancements have be … More en achieved in this project.
The first major achievement in this project is the fabrication of cBN thin films on silicon substrate suppressing amorphous interlayer formation. Such cBN growth only through the t-BN phase from silicon was realized by an invention of time-dependent-bias-technique (TDBT) using ICP-CVD method. Epitaxial growth of cBN on silicon will be a major breakthrough for the large area, high-quality synthesis of cBN in future, so this process will be essential to reach this goal.
The discovery of the elastic deformation of boron nitride nano array (BNNA) in nano-scale is the second important finding, observed by the transmission electron microscopy (TEM). The peculiar deformation was caused in sp^2-bonded turbostratic boron nitride (tBN), built on a thin edge of silicon by ICP-CVD. The reversible minimum-bending curvature radius of the arrays was found to reach approximately 0.3 nm. Such an unique elastic deformation can not be explained by the conventional theory of deformation of ceramics and metals, and requires further investigation for thorough understandings of the mechanism. Still it can possess the potential of being applied in both MEMS and various nano-scale devices as shock absorber or relevant buffers.
As the third major result, we have fabricated a prototype device of high temperature semiconductor with cBN to demonstrate the high potential and high quality of the films processed in a newly developed ultra-clean sputtering system. This device has the structure of heterojunction diode between cBN and silicon and has exhibited the rectification ratio over 10^4 at room temperature, capable of working up to 570K.
From the above, it can be seen that considerable progress was made towards the overall goal of this project, and the results obtained so far clearly demonstrate the feasibility of this approach. Less

Report

(4 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (33 results)

All 2004 2003 2002 2001 Other

All Journal Article (17 results) Publications (16 results)

  • [Journal Article] High-resolution transmission electron microscopy of as-deposited boron nitride on the edge of ultrathin Si flake2004

    • Author(s)
      H.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Journal of Applied Physics 95(5)

      Pages: 2337-2341

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Mass spectrometric study of low-pressure inductively coupled plasma for chemical vapor deposition of cubic boron nitride films2003

    • Author(s)
      H.Yang, T.Yoshida
    • Journal Title

      Science and Technology of Advanced Materials 4

      Pages: 613-616

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Interface engineering of cBN films deposited on silicon substrates2003

    • Author(s)
      H.S.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Journal of Applied Physics 94(2)

      Pages: 1248-1251

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Dynamic and atomistic deformation of sp^2-bonded boron nitride nanoarrays2003

    • Author(s)
      C.Iwamoto, H.S.Yang, S.Watanabe, T.Yoshida
    • Journal Title

      Applied Physics Letters 83(21)

      Pages: 4402-4404

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Rectification properties of layered boron nitride films on silicon2003

    • Author(s)
      K.Nose, K.Tachibana, T.Yoshida
    • Journal Title

      Applied Physics Letters 83(5)

      Pages: 943-945

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Mass spectrometric syudy of low-pressure inductively coupled plasma for chemical vapor deposition of cubic boron nitride films2003

    • Author(s)
      H.Yang, T.Yoshida
    • Journal Title

      Science and Technology of Advanced Materials 4

      Pages: 613-616

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Interface engineering of cBN films deposited on silicon substrates2003

    • Author(s)
      H.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Journal of Applied Physics 94(2)

      Pages: 1248-1251

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] High-quality cBN thin films prepared by plasma chemical vapor deposition with time-dependent biasing technique2002

    • Author(s)
      H.S.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Thin Solid Films 407

      Pages: 67-71

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Nanostructures of the turbostratic BN transition layer by plasma-enhanced chemical vapor deposition2002

    • Author(s)
      H.S.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Journal of Applied Physics 91(10)

      Pages: 6695-6699

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Direct growth of c-BN on a mono-structured transition layer by plasma-enhanced chemical vapor deposition2002

    • Author(s)
      C.Iwamoto, H.S.Yang, T.Yoshida
    • Journal Title

      Diamond and Related Materials 11

      Pages: 1854-1857

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Ion implantation effects on the structure and nanomechanical properties of vapor deposited cubic boron nitride films2002

    • Author(s)
      Y.Yamada-Takemura, T.Yoshida
    • Journal Title

      Journal of Vacuum Science & Technology B 20(3)

      Pages: 936-939

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] High-quality cBN thin films prepared by plasma chemical vapor deposition with time-dependent biasing technique2002

    • Author(s)
      H.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Thin Solid Films 407

      Pages: 67-71

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Nanostructures of the turbostratic BN transition layer in cubic BN thin films deposited by low-pressure inductively coupled plasma-enhanced chemical vapor deposition2002

    • Author(s)
      H.S.Yang, C.Iwamoto, T.Yoshida
    • Journal Title

      Journal of Applied Physics 91(10), Part 1

      Pages: 6695-6699

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Ion implantation effects on the structure and nanomechanical properties of vapor deposited cubic boron nitride films2002

    • Author(s)
      Y.Yamada-Takamura, T.Yoshida
    • Journal Title

      Journal of Vacuum Science & Technology B 20(3)

      Pages: 936-939

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Molecular dynamics study of the role of ion bombardment in cubic boron nitride thin film deposition2001

    • Author(s)
      H.Koga, Y.Nakamura, S.Watanabe, T.Yoshida
    • Journal Title

      Surface and Coating Technology 142-144

      Pages: 911-915

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Dynamic and atomistic deformation of sp2-bonded boron nitride nanoarrays2001

    • Author(s)
      H.Koga, Y.Nakamura, S.Watanabe, T.Yoshida
    • Journal Title

      Science and Technology of Advanced Materials 2

      Pages: 349-356

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Journal Article] Molecular dynamics study of deposition mechanism of cubic boron nitride2001

    • Author(s)
      H.Koga, Y.Nakamura, S.Watanabe, T.Yoshida
    • Journal Title

      Science and Technology of Advanced Materials 2

      Pages: 349-356

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.S.Yang, C.Iwamoto, T.Yoshida: "Interface engineering of cBN films deposited on silicon substrates"Journal of Applied Physics. 94(2). 1248-1251 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] C.Iwamoto, H.S.Yang, S.Watanabe, T.Yoshida: "Dynamic and atomistic deformation of sp2-bonded boron nitride nanoarrays"Applied Physics Letters. 83(21). 4402-4404 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] K.Nose, K.Tachibana, T.Yoshida: "Rectification properties of layered boron nitride films on silicon"Applied Physics Letters. 83(5). 943-945 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.S.Yang, C.Iwamoto, T.Yoshida: "High-resolution transmission electron microscopy of as-deposited boron nitride on the edge of ultrathin Si flake"Journal of Applied Physics. 95(5). 2337-2341 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.S.Yang, T.Yoshida: "Mass spectrometric study of low-pressure inductively coupled plasma for chemical vapor deposition of cubic boron nitride films"Sci.Tech.Adv.Mater. (In print). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Iwamoto C, Yang HS, Yoshida T: "Direct growth of c-BN on a mono-structured transition layer by plasma-enhanced chemical vapor deposition"Diamond and Related Materials. 11. 1854-1857 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Yang HS, Iwamoto C, Yoshida T: "Nanostructures of the turbostratic BN transition layer in cubic BN thin films deposited by low-pressure inductively coupled plasma-enhanced chemical vapor deposition"Journal of Applied Physics. 91. 6695-6699 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Yang HS, Iwamoto C, Yoshida T: "High-quality cBN thin films prepared by plasma chemical vapor deposition with time-dependent biasing technique"Thin Solid Films. 407. 67-71 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Yang HS, Iwamoto C, Yoshida T: "Plasma-Enhanced Chemical Vapor deposition of High Quality Cubic BN Films with an Intermediate Layer of Turbstratic BN Thinner than 3nm"Res.Soc.Symp.Proc. 750. (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Iwamoto C, Yang HS, Yoshida: "Atomic-Scale Dynamic Deformation Behavior of BN thin Films"Res.Soc.Symp.Proc. 750. (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Yamada-Takamura, T.Yoshida: "Ion implantation effects on the structure and nanomechanical properties of vapor deposited cubic boron nitride films"Journal of Vacuum Science and Technology B. 20(3). 936-939 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Koga, Y.Nakamura, S.Watanabe, T.Yoshida: "Molecular dynamics study of deposition mechanism of cubic nitride"Science and Technology of Advanced Materials. 2・2. 349-356 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Koga, Y.Nakamura, S.Watanabe, T.Yoshida: "Molecular dynamic study of the role of ion bombardment in cubic boron nitride thin film deposition"Surface and Coating Technology. 142-144. 911-915 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Yang, C.Iwamoto, T.Yoshida: "High-quality cBN thin films prepared by plasma chemical vapor deposition with time-dependent baiasing technique"Thin Solid Films. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] 高村(山田)由紀子, 市野瀬英喜, 吉田豊信: "立方晶窒化ホウ素膜成長に伴う相変化のHRTEM観察"まてりあ. 40・12. 1033 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] K.Tachibana, Y.Y-Takamura, T.Yoshida: "High temperature electronic properties of cBN films deposited by sputtering"Proceed. 15the International Symposium on Plasma Chemistry. IV. 1983-1988 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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