• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

Exploration of Physics and Integration of Nano-Scale MOSEFET with Suppressed Fluctuations

Research Project

Project/Area Number 13450135
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionThe University of Tokyo

Principal Investigator

HIRAMOTO Toshiro  The University of Tokyo, Institute of Industrial Science, Professor, 生産技術研究所, 教授 (20192718)

Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥14,800,000 (Direct Cost: ¥14,800,000)
Fiscal Year 2003: ¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2002: ¥4,700,000 (Direct Cost: ¥4,700,000)
Fiscal Year 2001: ¥6,500,000 (Direct Cost: ¥6,500,000)
KeywordsSemiconductor / Silicon MOSFET / Quantum Effect / Coulomb Blockade / Single-Electron Transistor / Quantum Dot / Resonant Tunneling / Nanotechnology / 不揮発性メモリ / しきい値電圧 / 保持時間 / シリコン / MOSFET / 移動度 / 量子輸送現象 / 揺らぎ
Research Abstract

The purpose of this research is to investigate the physics in nano-scale MOSEFET with suppressed size fluctuations and to apply new phenomena to integrated circuit devices. We have developed the fabrication process of nano-devices with dimensions less than 10nm by means of electron beam lithography and etching. Quantum effects and single-electron charging effect appear at room temperature in the fabricated devices. In the MOSFET with extremely narrow channel less than 10nm, the increase in threshold voltage is observed due to the rise of ground energy of electrons in narrow channel. We have proposed a new method to control threshold voltage in nano-scale MOSFET using this effect. It is also shown by simulation that electron and hole mobility increases in ultra-narrow channel MOSFET. On the other hand, Coulomb blockade oscillations due to single-electron charging effect is observed at room temperature in point-contact MOSFETs. A silicon dot is self-formed between source and drain and the device acts as a single-electron or single-hole transistor. We fabricated a point-contact MOSFET with a dot of 2nm diameter. The peak-to-valley current ratio of the Coulomb blockade oscillations is over 40 at room temperature. Negative differential conductance due to resonant tunneling is also observed. The two-input logic operation using a single device is demonstrated for the first time using a single-hole transistor.

Report

(4 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (37 results)

All Other

All Publications (37 results)

  • [Publications] M.Saitoh, T.Hiramoto: "Effects of Discrete Quantum Levels on Electron Transport in Silicon Single-Electron Transistors with an Ultra-Small Quantum Dot"IEICE Transactions of Electronics. Vol.E84-C, No.8. 1074-1076 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Saitoh, T.Saito, T.Inukai, T.Hiramoto: "Transport spectroscopy of the ultrasmall silicon quantum dot in a single-electron transistor"Applied Physics Letters. Vol.79, No.13. 2025-2027 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Saitoh, T.Hiramoto: "Observation of current staircase due to large quantum level spacing in a silicon single-electron transistor with low parasitic series resistance"Journal of Applied Physics. Vol.91, No.10. 6725-6728 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Saito, T.Saraya, T.Inukai, H.Majima, T.Nagumo, T.Hiramoto: "Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs."IEICE Transactions on Electronics. Vol.E85-C, No.5. 1073-1078 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Masumi Saitoh, Tasuku Murakami, Toshiro Hiramoto: "Effects of Oxidation Process on the Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron Transistors"IEEE Transactions on Nanotechnology. Vol.1, No.4. 214-218 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Saitoh, E.Nagata, T.Hiramoto: "Large memory window and long charge retention time in ultra-narrow channel silicon floating-dot memory"Applied Physics Letters. Vol.82, No.11. 1787-1789 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Hiramoto, T.Saito, T.Nagumo: "Future Electron Devices and SOI Technology - Semi-Planar SOI MOSFETs with Sufficient Body Effect -"Japanese Journal of Applied Physics. Vol.42, Part 1, No.4B. 1975-1978 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Saitoh, H.Majima, T.Hiramoto: "Tunneling Barrier Structure in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors"Japanese Journal of Applied Physics. Vol.42, Part 1, No.4B. 2426-2428 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Toshiro Hiramoto, H.Majima, Masumi Saitoh: "Quantum effects and single-electron charging effects in nano-scale silicon MOSFETs at room temperature"Materials Science and Engineering B. Vol.101, Issues 1-3. 24-27 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] 平本俊郎: "ナノスケール狭チャネルMOSFETにおける量子効果"応用物理. Vol.72, No.9. 1167-1170 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Masumi Saitoh, Tasuku Murakami, Toshiro Hiramoto: "Large Coulomb Blockade Oscillations at Room Temperature in Ultra-Narrow Wire Channel MOSFETs Formed by Slight Oxidation Process."IEEE Transactions on Nanotechnology. Vol.2, No.4. 241-245 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] G.Tsutsui, T.Nagumo, T.Hiramoto: "Enhancement of Adjustable Threshold Voltage Range by Substrate Bias Due to Quantum Confinement in Ultra Thin Body SOI pMOSFETs"IEEE Transactions on Nanotechnology. Vol.2, No.4. 314-318 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Masumi Saitoh, Toshiro Hiramoto: "Room-Temperature Observation of Negative Differential Conductance Due to Large Quantum Level Spacing in Silicon Single-Electron Transistor"Japanese Journal of Applied Physics. Vol.43, No.2A. L210-L213 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Masumi Saitoh, Toshiro Hiramoto: "Extension of Coulomb Blockade Region by Quantum Confinement in the Ultrasmall Silicon Dot in a Single-Hole Transistor at Room Temperature"Applied Physics Letters. Vol.84, No.16. 3172-3174 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Saitoh, T.Hiramoto: "Effects of Discrete Quantum Levels on Electron Transport in Silicon Single-Electron Transistors with an Ultra-Small Quantum Dog"IEICE Transactions of Electronics. Vol.E84-C, No.8. 1074-1076 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Saitoh, T.Saito, T.Inukai, T.Hiramoto: "Transport spectroscopy of the ultrasmall silicon quantum dot in a single-electron transistor"Applied Physics Letters. Vol.79, No.13. 2025-2027 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Saitoh, T.Hiramoto: "Observation of current staircase due to large quantum level spacing in a silicon single-electro transistor with low parasitic series resistance"Journal of Applied Physics. Vol.91, No.10. 6725-6728 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Saito, T.Saraya, T.Inukai, H.Majima, T.Nagumo, T.Hiramoto: "Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs"IEICE Transactions on Electronics. Vol.E85-C, No.5. 1073-1078 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Masumi Saitoh, Tasuku Murakami, Toshiro Hiramoto: "Effects of Oxidation Process on the Tunneling Barrier Structures in Room-Temperature Operating Silicon Single-Electron Transistors"IEEE Transactions on Nanotechnology. Vol.1, No.4. 214-218 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Saitoh, E.Nagata, T.Hiramoto: "Large memory window and long charge retention time in ultra-narrow channel silicon floating-dot memory"Applied Physics Letters. Vol.82, No.11. 1787-1789 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Hiramoto, T.Saito, T.Nagumo: "Future Electron Devices and SOI Technology -Semi-Planar SOI MOSFETs with Sufficient Body Effect-"Japanese Journal of Applied Physics. Vol.42, Part 1, No.4B. 1975-1978 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Saitoh, H.Majima, T.Hiramoto: "Tunneling Barrier Structure in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors"Japanese Journal of Applied Physics. Vol.42, Part 1, No.4B. 2426-2428 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Toshiro Hiramoto, H.Majima, Masumi Saitoh: "Quantum effects and single-electron charging effects in nano-scale silicon MOSFETs at room temperature"Materials Science and Engineering B. Vol.101, Issues 1-3. 24-27 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Masumi Saitoh, Tasuku Murakami, Toshiro Hiramoto: "Large Coulomb Blockade Oscillations at Room Temperature in Ultra-Narrow Wire Channel MOSFETs Formed by Slight Oxidation Process"IEEE Transactions on Nanotechnology. Vol.2, No.4. 241-245 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] G.Tsutsui, T.Nagumo, T.Hiramoto: "Enhancement of Adjustable Threshold Voltage Range by Substrate Bias Due to Quantum confinement in Ultra Thin Body SOI pMOSFETs"IEEE Transactions on Nanotechnology. Vol.2, No.4. 314-318 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Masumi Saitoh, Toshiro Hiramoto: "Room-Temperature Observation of Negative Differential Conductance Due to Large Quantum Level Spacing in Silicon Single-Electron Transistor"Japanese Journal of Applied Physics. Vol.43, No.2A. L210-L213 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Masumi Saitoh, Toshiro Hiramoto: "Extension of Coulomb Blockade Region by Quantum Confinement in the Ultrasmall Silicon Dot in a Single-Hole Transistor at Room Temperature"Applied Physics Letters. Vol.84, No.1. 3172-3174 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Saitoh, H.Majima, T.Hiramoto: "Tunneling Barrier Structure in Room-Temperature Operating Silicon Single-Electron and Single-Hole Transistors"Japanese Journal of Applied Physics. Vol.42,Part1,No.4B. 2426-2428 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Toshiro Hiramoto, H.Majima, Masumi Saitoh: "Quantum effects and single-electron charging effects in nano-scale silicon MOSFETs at room temperature"Materials Science and Engineering B. Vol.101,Issues1-3. 24-27 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 平本俊郎: "ナノスケール狭チャネルMOSFETにおける量子効果"応用物理. Vol.72,No.9. 1167-1170 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Masumi Saitoh, Tasuku Murakami, Toshiro Hiramoto: "Large Coulomb Blockade Oscillations at Room Temperature in Ultra-Narrow Wire Channel MOSFETs Formed by Slight Oxidation Process"IEEE Transactions on Nanotechnology. Vol.2,No.4. 241-245 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] G.Tsutsui, T.Nagumo, T.Hiramoto: "Enhancement of Adjustable Threshold Voltage Range by Substrate Bias Due to Quantum Confinement in Ultra Thin Body SOI pMOSFETs"IEEE Transactions on Nanotechnology. Vol.2,No.4. 314-318 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Masumi Saitoh, Toshiro Hiramoto: "Room-Temperature Observation of Negative Differential Conductance Due to Large Quantum Level Spacing in Silicon Single-Electron Transistor"Japanese Journal of Applied Physics. Vol.43,No.2A. L210-L213 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] M.Saitoh, H.Majima, T.Hiramoto: "Effects of ultra-narrow channel on characteristics of MOSFET memory with silicon nanocrystal floating gates"Technical Digests of International Electron Devices Meeting (IEDM). 181-184 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Saitoh, E.Nagata, T.Hiramoto: "Large memory window and long charge retention time in ultra-narrow channel silicon floating-dot memory"Applied Physics Letters. (採択決定). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Hiramoto: "Nano-Scale Silicon MOSFET : Towards Non-Traditional and Quantum Devices"Proceedings of 2001 IEEE International SOI Conference. 8-10 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H.Majima, Y.Saito, T.Hiramoto: "Impact of Quantum Mechanical Effects on Design of Nano-Scale Narrow Channel n-and p-type MOSFETs"Technical Digests of 2001 International Electron Devices Meeting (IEDM). 733-736 (2001)

    • Related Report
      2001 Annual Research Report

URL: 

Published: 2001-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi