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A Fundamental Study of Triode Amplifier Devices in the Optical Range

Research Project

Project/Area Number 13450137
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionTokyo Institute of Technology

Principal Investigator

ASADA Masahiro  Tokyo Institute of Technology, Information Processing, Professor, 大学院・総合理工学研究科, 教授 (30167887)

Co-Investigator(Kenkyū-buntansha) WATANABE Masahiro  Tokyo Institute of Technology, Information Processing, Associate Professor, 大学院・総合理工学研究科, 助教授 (00251637)
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥15,700,000 (Direct Cost: ¥15,700,000)
Fiscal Year 2002: ¥7,200,000 (Direct Cost: ¥7,200,000)
Fiscal Year 2001: ¥8,500,000 (Direct Cost: ¥8,500,000)
KeywordsTriode in optical range / nanostructures / photon-assisted tunneling / beat of electron waves / coherent superradiance / CaF_2 / CdF_2 / Si heterostructures / resonant tunneling diode
Research Abstract

This project aimed at realization of a triode amplifier device in the optical frequency range which we proposed recently. The device operates with the combination of the photon-assisted tunneling of electrons at the input and their emission of electromagnetic wave at the output port due to the beat of electron waves. The nanostructure crystal growth, fabrication process, and detailed theoretical analysis of the device operation were performed as a fundamental research toward the realization of the device. The results are summarized as follows.
For the theoretical analysis of the device operation, a full quantum mechanical treatment was done for the first time, noting that the emission of electromagnetic wave at the output is originated from the collective superradiance from the photon-assisted tunneling electrons. By this analysis, it became possible to discuss the influence of electron scattering, frequency limit, siginal-to-noise ratio. It was shown that, although the electron scatter … More ing reduces the gain, its influence is not significant if the photon energy is smaller than the electron energy broadening due to the scattering, and a possibility of amplification up to far or mid infrared region was estimated.
For the fabrication of the device, crystal growth of CaF2/CdF2/Si heterostructure was investigated as the first step, because energy quantization is expected to be remarkable in this material system due to large potential barriers. We proposed the nano-area epitaxy, in which the crystal growth is restricted into 100nm-order small region. By this technique, the resonant tunneling structure with very uniform characteristics was obtained, and systematic experiments for the structure dependence were performed for the first time. Crystal growth on Si(100) substrate was also studied using hydrogen-terminated substrates and inclined substrates in which the atomic steps on the surface is controlled, and the negative differential resistance was obtained at room temperature for the first time on Si(100) substrate for this material system. The device structure using two-dimensional electron gas at the heterointerface and slot lines at the input and output ports was proposed for relatively easy fabrication.
By these results, theoretical bases, crystal growth, and device structures were established. Less

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (59 results)

All Other

All Publications (59 results)

  • [Publications] M.Asada: "Quantum theory of a semiconductor klystron"Physical Review B. 67・11. 115303-1-115303-8 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Asada: "Theory of superradiance from photon-assisted tunneling electrons and its application to a terahertz device"Journal of Applied Physics. 91(in press). July 1 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Tsutsui, T.Nagai, M.Asada: "Analysis and Fabrication of p-type Vertical PtSi Schottky Source/Drain MOSFET"Trans.Electron.IEICE of Japan. E85-C・5. 1191-1199 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Tsutsui, M.Asada: "Dependence of Drain Current on Gate Oxide Thickness of p-type Vertical PtSi Schottky Source/Drain MOSFETs"Jpn.J.Applied Physics. 41・1. 54-58 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y.Niiyama, T.Maruyama, N.Nakamura, M.Watanabe: "Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)"Jpn.J.Appl.Phys.. 41・7A. L751-L753 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Maruyama, N.Nakamura, M.Watanabe: "Crystal Growth of BeZnSe on CaF_2/Si(111) Subtrate"Jpn.J.Appl.Phys.. 41・8A. L876-L877 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Watanabe, T.Ishikawa, M.Matsuda, T.Kanazawa, M.Asada: "Room temperature negative differential resistance of CdF_2/CaF_2 resonant tunneling diode grown on Si using nanoarea local epitaxy"Abstract of International Conference on Physics of Semiconductors (Edinburgh/UK). Part III. 157 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Watanabe, T.Ishikawa, M.Matsuda, T.Kanazawa, M.Asada: "Room Temperature Negative Differential Resistance of CdF2/CaF2 Resonant Tunneling Diode grown on Si(100) substrate using Nanoarea Local Epitaxy"Electronic Materials Conference (Santa Barbara, CA/USA). Z5 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Watanabe, T.Ishikawa, M.Matsuda, T.Kanazawa, M.Asada: "Systematic variation of negative differential resistance characteristics of CdF2/CaF2 Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy"Int.Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics (Tsukuba/Japan). Tu3-Tu4 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Asada, N.Sashinaka: "Nonlinear Terahertz Gain Estimated from Multi-Photon-Assisted Tunneling in Resonant Tunneling Diodes"Jpn.J.Appl.Phys.. 40・9. 5394-5398 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Asada: "Density-Matrix Modeling of Terahertz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Structures"Jpn.J.Appl.Phys.. 40・9. 5251-5256 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Asada: "Theoretical Analysis of Terahertz Harmonic Generation in Resonant Tunneling Diodes"Jpn.J.Appl.Phys.. 40・12. 6809-6810 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Maruyama, M.Watanabe: "Theoretical Analysis of the Threshold Current Density in BeMgZnSe Quantum Well Ultraviolet Lasers"Jpn.J.Applied Physics. 40,12. 6872-6873 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Asada, N.Sashinaka: "Nonlinear Tera-Hertz Gain Estimated from Multiple Photon-Assisted Tunneling in Resonant Tunneling Diode"International Conference on Indium Phosphide and Related Materials(Nara/Japan). WP-29 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Asada: "Density-Matrix Modeling of THz Photon-Assisted Tunneling in Resonant Tunneling Diodes"Advanced Research Workshop on Quantum Transport in Semiconductors (Maratea/Italy). G3-G8 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Asada, N.Sashinaka: "Theoretical Analysis of THz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Diodes"International Conference on Modulated Semiconductor Structures(Linz/Austria). ThP-56 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Watanabe, M.Asada: "CaF2/CdF2 Resonant Tunneling Devices with High Peak-to-Valley Ratio on Silicon Substrate"Frontier Science Research Conference, Science and Technology of Silicon Materials (LaJolla, CA/USA). S-II (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Watanabe, N.Sakamaki, T.Ishikawa: "Room Temperature Negative Differential Resistance with High Peak-to-Valley Current Ratio of CaF2/CdF2 Resonant Tunneling Diode on Silicon"International Conference on Indium Phosphide and Related Materials(Nara/Japan). WP-30 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Watanabe, N.Sakamaki, T.Ishikawa, D.Okamoto: "Selective Growth of CdF2/CaF2 Resonant Tunneling Diode Nanostructure on Si"Electronic Materials Conference (Notre Dame/USA). Y4 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Maruyama, N.Nakamura, M.Watanabe: "Epitaxial Growth of BeZeSe on CaF2/Si(111) Substrate"Electronic Materials Conference (Notre Dame/USA). Y3 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Watanabe, N.Sakamaki, T.Ishikawa: "Fine-Area Epitaxy of CaF2/CdF2 Resonant Tunneling Diode on Si"International Workshop on Quantum Nonplanar Nanostructures and Nanoelectronics (Tsukuba/Japan). TuP-29 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Watanabe, N.Sakamaki, T.Ishikawa: "Feasility study of CaF2/CdF2 intersubband transition lasers"Pacific Rim Conference on Lasers and Electro-Optics (Chiba/Japan). WC1-WC5 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 浅田雅洋(分担): "ナノ光工学ハンドブック"朝倉書店. 6 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 浅田雅洋(分担): "応用物理ハンドブック(第2版)"丸善株式会社. 3 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 浅田雅洋(分担): "酸化物エレクトロニクス"培風館. 10 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Asada: "Quantum theory of a semiconductor klystron"Phys. Rev. B. 67, No. 11. 115303 1-8 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Asada: "Theory of superradiance from photon-assisted tunneling electrons and its application to terahertz device"J. Appl. Phys.. 91, No.1 in press. (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Tsutsui, T. Nagai, and M. Asada: "Analysis and Fabrication of p-type Vertical PtSi Schottky Source/Drain MOSFET"Trans. Electron. IEICE of Japan. E85-C, No.5. 1191-1199 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Tsutsui and M.Asada: "Dependence of Drain Current on Gate Oxide Thickness of p-type Vertical PtSi Schottky Source/Drain MOSFETs"Jpn.J.Applied. Physics.. 41, No.1. 54-58 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Y. Niiyama, T. Maruyama, N. Nakamura, and M. Watanabe: "Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)"Jpn. J. Appl. Phys.. 41, No.7A. L751-L753 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Maruyama, N. Nakamura, and M. Watanabe: "Crystal Growth of BeZnSe on CaF_2/Si(111) Subtrate"Jpn. J. Appl. Phys.. 41, No.8A. L876-L877 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Kanazawa, and M. Asada: "Room temperature negative differential resistance of CdF2/CaF2 resonant tunneling diode grown on Si using nanoarea local epitaxy"Int. Conf. on Physics of Semiconductors, Edinburgh. P157 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, and M. Asada: "Room Temperature Negative Differential Resistance of CdF_2/CaF_2 Resonant Tunneling Diode grown on Si(100) substrate using Nanoarea Local Epitaxy"Electronic Materials Conference, Santa Barbara/CA. Z5. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Watanabe, T. Ishikawa, M. Matsuda, T. Kanazawa, and M. Asada: "Systematic variation of negative differential resistance characteristics of CdF_2/CaF_2 Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy"Int. Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02) , Tsukuba. Tu4-3. (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Asada and N.Sashinaka: "Nonlinear Terahertz Gain Estimated from Multi- Photon-Assisted Tunneling in Resonant Tunneling Diodes"Jpn. J. Appl. Phys.. 40, No.9. 5394-5398 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Asada: "Density-Matrix Modeling of Terahertz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Structures"Jpn. J. Appl. Phys. 40, No.9. 5251-5256 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Asada: "Theoretical Analysis of Terahertz Harmonic Generation in Resonant Tunneling Diodes"Jpn. J. Appl. Phys.. 40, No.12. 6809-6810 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Maruyama and M. Watanabe: "Theoretical Analysis of the Threshold Current Density in BeMgZnSe Quantum Well Ultraviolet Lasers"Jpn. J. Appl. Phys.. 40, No. 12. 6872-6873 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Asada and N. Sashinaka: "Nonlinear Tera-Hertz Gain Estimated from Multiple Photon-Assisted Tunneling in Resonant Tunneling Diode"International Conference on Indium Phosphide and Related Materials (IPRM-01), Nara. WP-29. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Asada: "Density-Matrix Modeling of THz Photon-Assisted Tunneling in Resonant Tunneling Diodes"Advanced Research Workshop on Quantum Transport in Semiconductors, Maratea/Italy. G3-8. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Asada and N. Sashinaka: "Theoretical Analysis of THz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Diodes"International Conference on Modulated Semiconductor Structures (MSS-10) Linz/Austria. ThP-56. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Watanabe and M. Asada: "CaF_2 /CdF_2 Resonant Tunneling Devices with High Peak-to-Valley Ratio on Silicon Substrate"Frontier Science Research Conference, Science and Technology of Silicon Materials, LaJolla/CA. S-II. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Watanabe, N. Sakamaki, and T. Ishikawa: "Room Temperature Negative Differential Resistance with High Peak-to-Valley Current Ratio of CaF2/CdF2 Resonant Tunneling Diode on Silicon"International Conference on Indium Phosphide and Related Materials (IPRM-01), Nara. WP-30. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Watanae, N.Sakamaki. T.Ishikawa, and D.Okamoto: "Selective Growth of CdF2/CaF2 Resonant Tunneling Diode Nanostructure on Si"Electronic Materials Conference, Notre Dame/USA. Y4. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Maruyama, N.Nakamura, and M.Watanabe: "Epitaxial Growth of BeZeSe on CaF2/Si(111) Substrate"Electronic Materials Conference, Notre Dame/USA. Y3. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Watanabe, N.Sakamaki and T.Ishikawa: "Fine-Area Epitaxy of CaF2/CdF2 Resonant Tunneling Diode on Si"International Workshop on Quantum Nonplanar Nanostructures and Nanoelectronics Tsukuba. TuP-29. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Watanabe, N.Sakamaki, and T. Ishikawa: "Feasility study of CaF2/CdF2 intersubband transition lasers"Pacific Rjm Conference on Lasers and Electro-Optics, Chiba. WC1-5. (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Asada: "Quantum theory of a semiconductor klystron"Physical Review B. 67・11. 115303-1-115303-8 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Tsutsui, T.Nagai, M.Asada: "Analysis and Fabrication of p-type Vertical PtSi Schottky Source/Drain MOSFET"Trans.Electron.IEICE of Japan. E-85-C・5. 1191-1199 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Tsutsui, M.Asada: "Dependence of Drain Current on Gate Oxide Thickness of p-type Vertical PtSi Schottky Source/Drain MOSFETs"Japan.J.Applied Physics. 41・1. 54-58 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Niiyama, T.Maruyama, N.Nakamura, M.Watanabe: "Room Temperature Ultraviolet Photoluminescence of BeZnSe on GaP(001)"Jpn.J.Appl.Phys.. 41・7A. L751-L753 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Maruyama, N.Nakamura, M.Watanabe: "Crystal Growth of BeZnSe on CaF_2/Si(111) Subtrate"Jpn.J.Appl.Phys.. 41・8A. L876-L877 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Watanabe, T.Ishikawa, M.Matsuda, T.Kanazawa, M.Asada: "Room temperature negative differential resistance of CdF_2/CaF_2 resonant tunneling diode grown on Si using nanoarea local epitaxy"Abstract of International Conference on Physics of Semiconductors (Edinburgh/UK). PartIII. 157 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Tsutsui, M.Asada: "Dependence OF Drain Current on Gate Oxide Thickness of p-type Vertical PtSi Schottky Source/Drain MOSFETs"Japan. J. Applied Physics. 41(掲載予定). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Tsutsui, T.Nagai, M.Asada: "Analysis and Fabrication of p-type Vertical PtSi Schottky Source/Drain MOSFET"Trans. Electron. IEICE of Japan. E85-C(掲載予定). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Asada: "Theoretical Analysis of Terahertz Harmonic Generation in Resonant Tunneling Diodes"Japan. J. Applied Physics. 40,12. 6809-6810 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Asada, N.Sashinaka: "Nonlinear Terahertz Gain Estimated from Multiphoton-Assisted Tunneling in Resonant Tunneling Diodes"Japan. J. Applied Physics. 40,9. 5394-5398 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Asada: "Density-Matrix Modeling of Terahertz Photon-Assisted Tunneling and Optical Gain in Resonant Tunneling Structures"Japan. J. Applied Physics. 49,9. 5251-5256 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] T.Maruyama, M.Watanabe: "Theoretical Analysis of the Threshold Current Density in BeMgZnSe Quantum Well Ultraviolet Lasers"Japan. J. Applied Physics. 40,12. 6872-6873 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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