• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

SYNTHESIS OF CUBIC GaN SINGLE CRSYTALS BY THE K FLUX METHOD

Research Project

Project/Area Number 13450355
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 無機工業化学
Research InstitutionTohoku University

Principal Investigator

YAMANE Hisanori  Tohoku University, Center for Interdisciplinary Research, Professor, 学際科学国際高等研究センター, 教授 (20191364)

Co-Investigator(Kenkyū-buntansha) SARAYAMA Seiji  Ricoh Company, Ltd., R & D Center, Research and Development Group, Chief Researcher, 応用電子研究所・オプトデバイス開発センター, 主席係長研究員
KUBOTA Shunichi  Tohoku University, Institute for Multidisciplinary Research for Advanced Materials, Research Associate, 多元物質科学研究所, 助手 (10271975)
SHIMADA Masahiko  Tohoku University, Institute for Multidisciplinary Research for Advanced Materials, Professor, 多元物質科学研究所, 教授 (80029701)
Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥13,700,000 (Direct Cost: ¥13,700,000)
Fiscal Year 2003: ¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2002: ¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2001: ¥9,100,000 (Direct Cost: ¥9,100,000)
KeywordsGallium nitride / zinc-blende-type structure / Flux method / K melt / Cathodoluminescence / Crystal growth / Solution growth / Crystal morphology / 金属ナトリウム融液 / 立方晶閃亜鉛鉱型 / 反応容器 / 立方晶窒化ガリウム / 金属カリウム融液法
Research Abstract

Gallium nitride, having the hexagonal wurtzite-type structure (h-GaN), has attracted an interest as a material for blue-light emitting diodes and short-wavelength laser diodes. GaN has a polymorph of the cubic zinc-blende-type structure (c-GaN), hut the detail properties on the c-GaN have not been clarified due to the lack at bulk c-GaN single crystals.
In the present study, granular and platelet GaN crystals were prepared at 700℃ for 24 h and 7 MPa of N_2 by using a K flux. The platelet crystals of h-GaN with a size of about 1 mm were obtained at the vapor-liquid interface. The granular crystals with a size of 50 μm were characterized as a mixture of c-GaN and h-GaN. Rietveld analysis revealed that granular crystals contain 40% of c-GaN. The granular crystals of 30 μm containing 95% of c-GaN were obtained at 600℃,24 h and 7 MPa of N_2. The size of the granular crystals of 70% c-GaN, prepared at 700℃, 24 h and 4 MPa of N_2 was about 60 μm. The formation of c-GaN increased with decreasin … More g temperature and N_2 pressure.
The granular crystals having the maximum size of 200 μm was obtained at 700℃, 96 h and 4 MPa of N_2. A colorless transparent c-GaN crystal with a size of 80 μm was picked up in the sample synthesized at 650℃,96 h and 4 MPa of N_2. Square facets of (100) phase and steps of equilateral triangle shape of (111) phase, reflecting the threefold-axis symmetry of cubic structure, were observed. A peak from near band-edge emission of c-GaN at 3.209eV observed in the cathodoluminescence spectrum of the c-GaN crystal was consistent with the results reported for c-GaN thin films. The half-value width of the peek was 76 meV.
Granular and platelet GaN crystals were also synthesized by using a K-Na flux. However, the ratio of c-GaN is the granular or plates prepared with the K-Na flux was smaller than that prepared with the K flux. No crystal was obtained from K-Ga melt in a W crucible at 650 -680℃ and 4 -7 MPa of N_2. Granular crystals with a size of 40 μm were obtained from partial melt of K-Ga intermetallic compounds at 610 -630℃. Less

Report

(4 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (21 results)

All Other

All Publications (21 results)

  • [Publications] 山根久典: "K-Ga融液を用いた立方晶窒化ガリウムの作製"日本セラミックス協会学術論文誌. 110. 289-292 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Sekiguchi: "Cathodoluminescence Study of h- and c-GaN Single Crystals Grown by a Na or K Flux"Science and Technology of Advanced Materials. 3. 91-94 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] 山根久典: "フラックス法によるGaN単結晶の育成"応用物理. 71. 548-551 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Aoki: "Influence of 3d-Transition-Metal Additives on Single Crystal Growth of GaN by the Na Flux Method"Japanese Journal of Applied Physics. 42. 5445-5549 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Aoki: "Dissolution and Recrystallization of GaN in Molten Na"Japanese Journal of Applied Physics. 42. 7272-7275 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] 山根久典: "GaN単結晶の育成"金属. 73. 1060-1064 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Aoki: "Single Crystal Growth of GaN by The Temperature Gradient Na Flux Method"J.Cryst.Growth. (印刷中). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Yamane, T.Araki, T.Sekiguchi: "Fabrication Of Cubic Gallium Nitride Single Crystal Using A K-Ga Melt"J.Ceram.Soc. Japan. 110. 289-292 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Sekiguchi, H.Yamane, M.Aoki, T.Araki, M.Shimada: "Cathodoluminescence Study of h-and c-GaN Single Crystals Grown by a Na or K Flux"Science and Technology of Advanced Materials. 3. 91-94 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Yamane, M.Aoki, S.Sarayama: "GaN Single Crystal Growth by the Flux Method"Oyo Buturi. 71. 548-551 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.Yamane, M.Aoki, S.Sarayama: "Crystal Growth of GaN"Kinzoku. 73. 1060-1064 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Aoki, H.Yamane, M.Shimada, S.Sarayama, H.Iwata, F.J.Disalvo: "Influence of 3d-Transition-Metal Additives on Single Crystal"Growth of GaN by the Na Flux Method Jpn.J.Appl.Phys.. 42. 5445-5449 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Aoki, H.Yamane, M.Shimada, S.Sarayama, H.Iwata, F.J.Disalvo: "Dissolution and Recrystallization of GaN in Molten Na"Jpn.J.Appl.Phys.. 42. 7272-7275 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Aoki, H.Yamane, M.Shimada, S.Saraysma, H.Iwata, F.J.DiSalvo: "Single Crystal Growth of GaN by The Temperature Gradient Na Flux Method"J.Cryst. Growth. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] M.Aoki: "Influence of 3d-Transition-Metal Additives on Single Crystal Growth of GaN by the Na Flux Method"Japanese Journal of Applied Physics. 42. 5445-5549 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] M.Aoki: "Dissolution and Recrystallization of GaN in Molten Na"Japanese Journal of Applied Physics. 42. 7272-7275 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 山根 久典: "GaN単結晶の育成"金属. 73. 1060-1064 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 山根久典: "K-Ga融液を用いた立方晶窒化ガリウムの作製"日本セラミックス協会学術論文誌. 110. 289-292 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Takashi Sekiguchi: "Cathodoluminescence study of h-and c-GaN Single Crystals Grown by a Na or K Flux"Science and Technology of Advanced Materials. 3. 91-94 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 山根久典: "K-Ga融液を用いた立方晶窒化ガリウムの作製"日本セラミックス協会学術論文誌. 印刷中. (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Takashi Sekiguchi: "Cathodoluminescence study of h-and c-GaN Single Crystals Grown by a Na or K Flux"Science and Technology of Advanced Materials. 印刷中. (2002)

    • Related Report
      2001 Annual Research Report

URL: 

Published: 2001-04-01   Modified: 2016-04-21  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi