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Growth and characterization of Isotopically Enrichied ^<28>Si Single Crystals

Research Project

Project/Area Number 13555005
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Applied materials science/Crystal engineering
Research InstitutionKeio University

Principal Investigator

ITOH Kohei  Keio University, Faculty of Science & Technology, Associate Professor, 理工学部, 助教授 (30276414)

Co-Investigator(Kenkyū-buntansha) HIBIYA Taketoshi  NEC Co, Fundamental Research Laboratories, Principal Researcher, 基礎研究所, 主管研究員
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥13,200,000 (Direct Cost: ¥13,200,000)
Fiscal Year 2002: ¥2,900,000 (Direct Cost: ¥2,900,000)
Fiscal Year 2001: ¥10,300,000 (Direct Cost: ¥10,300,000)
Keywordssilicon / thermal conductivity / IC / isotope / 半導体
Research Abstract

We report on the measurements of the thermal conductivity of natural (^<nat>Si) and isotopically pure ^<28>Si as a function of temperature. The isotopically enrichied ^<28>Si employed is dislocation free with the electrically active net-impurity concentration (p-type) less than 1x10^<15>cm^<-3>. Oxygen and carbon concentrations are less than 1x10^<17>cm^<-3> for it was under the detection limit of FTIR. At room temperature, the ^<28>Si sample is measured to have the thermal conductivity about 10% higher than that of ^<nat>Si. This increase is in agreement with the experimental result reported recently [A. V. Gusev, A. M. Gibin, O. N. Morozkin, V. A. Gavva, and A. V. Mitin, Inorganic Materials, 38, 1305 (2002)], but in sever disagreement with the previously reported value of 60% at the room temperature. [T. Ruf, R. W. Henn, M. Asen-Palmer, E. Gmelin, M. Cardona, H. -J. Pohl, G. G. Devyatych and P. G. Sennikov, Solid State Commun. 115, 243 (2000).] It is therefore important to identify the true thermal conductivity of ^<28>Si in the future.

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (4 results)

All Other

All Publications (4 results)

  • [Publications] T.Takahashi, S.Fukatsu, K.M.Itoh 他4名: "Self-Diffusion of Si in Thermally Grown SiO_2 under Equilibrium Condition"J.Appl.Phys.. 93・6. 3674-3676 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Takahashi, S. Fukatsu, K. M. Itoh, M, Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi, and K, Shiraishi: "Self-Diffusion of Si in Thermally Grown SiO_2 under Equilibrium Conditions"J. Appl. Phys.. Vol.93, No.6. 3674-3676 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Takahashi, S.Fukatsu, K.M.Itoh 他4名: "Self-Diffusion of Si in Thermally Grown SiO_2 under Equilibrium Conditions"J. Appi. Phys.. 93・6. 3674-3676 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] 伊藤 公平, 田久 賢一郎: "シリコン同位体単結晶の応用"応用物理. 70・10. 1187-1190 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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