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Research and development of III-nitride semiconductor LED/Laser using quantum dots

Research Project

Project/Area Number 13555083
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionHOKKAIDO UNIVERSITY

Principal Investigator

TANAKA Satoru  Hokkaido Univ., RIES, Assoc. Prof., 電子科学研究所, 助教授 (80281640)

Co-Investigator(Kenkyū-buntansha) SAKAGUCHI Harunori  Hitachi Cable, Advanced Res. Center, Researcher, アドバンスリサーチセンター, 副センター長
TADATOMO Kauyuki  Mitsubishi Cable Ind., Photonic Res. Lab., Researcher, フォトニック研究所, 主席研究員
KUMANO Hidekazu  Hokkaido Univ., RIES, Res. Assistant, 電子科学研究所, 助手 (70292042)
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥14,000,000 (Direct Cost: ¥14,000,000)
Fiscal Year 2002: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2001: ¥12,500,000 (Direct Cost: ¥12,500,000)
KeywordsQuantum dot / UV LED / LD / Antisurfactnat / III-Nitride / Spatial ordering
Research Abstract

The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an Al_xGa_<1-x>N (x〜0.1) surface using Si as an antisurfactant. Exposing the Al_xGa_<1-x>N surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (10^<10>-10^<11> cm^<-2> with controllable dot sizes was ichieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots.

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (13 results)

All Other

All Publications (13 results)

  • [Publications] J.Brault: "Linear alignment of GaN quantum dots on AlN grown on vicinal SiC substrates"Journal of Applied Physics. 93・5. 3108-3110 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] J.Brault: "Characteristics of AlN growth on vicinal SiC(0001) substrates by molecular beam epitaxy"phys.stat.sol (b). 240・5. 314-317 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S.Tanaka: "A UV light-emitting diode incorporating GaN quantum dots"Jpn.J.Appl.Phys.. 42. L885-L887 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] J.S.Lee: "GaN quantum dot UV light emitting diode"Mater.Res.Soc.Proc.. 印刷中.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 田中悟: "GaN量子ドット紫外線LEDの作製と光学特性"レーザー研究. 印刷中.

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 青柳克信: "科学フロンティア-ナノマテリアル最前線"化学同人. 7 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] J.Brault: "Linear alignment of GaN quantum dots on AIN grown on vicinal SiC substrates"J. Appl. Phys.. 93, No. 5. 3108-3110 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] J.Brault: "Characteristics of AIN growth on vicinal SiC (0001) substrates by molecular beam epitaxy"Phys. Stat. Sol. (b). 240, No. 5. 314-317 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S.Tanaka: "A UV light-emitting diode incorporating GaN quantum dots"Jpn. J. Appl. Phys.. 42. L885-L887 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] J.S.Lee: "GaN quantum dot UV light emitting diode"Mater. Res. Soc. Proc.. (to be published).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S.Tanaka: "GaN quantum dot UV light emitting diode"Laser Kenkyu. (to be published) (in Japanese).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] J Brault, S.Tanaka, E.Sarigiannidou, J.-L.Rouviee, B.Daudin, G.Feulilet, H.Nakagawa: "Spatial ordering of GaN quantum dots grown on vicinal AIN surfaces"Journal of Applied Physics. 93・5. 3108-3110 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] 青柳克信, 田中悟: "科学フロンティアーナノマテリアル最前線"化学同人. 7 (2002)

    • Related Report
      2002 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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