Research and development of III-nitride semiconductor LED/Laser using quantum dots
| Project/Area Number |
13555083
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | HOKKAIDO UNIVERSITY |
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Principal Investigator |
TANAKA Satoru Hokkaido Univ., RIES, Assoc. Prof., 電子科学研究所, 助教授 (80281640)
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| Co-Investigator(Kenkyū-buntansha) |
SAKAGUCHI Harunori Hitachi Cable, Advanced Res. Center, Researcher, アドバンスリサーチセンター, 副センター長
TADATOMO Kauyuki Mitsubishi Cable Ind., Photonic Res. Lab., Researcher, フォトニック研究所, 主席研究員
KUMANO Hidekazu Hokkaido Univ., RIES, Res. Assistant, 電子科学研究所, 助手 (70292042)
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥14,000,000 (Direct Cost: ¥14,000,000)
Fiscal Year 2002: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2001: ¥12,500,000 (Direct Cost: ¥12,500,000)
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| Keywords | Quantum dot / UV LED / LD / Antisurfactnat / III-Nitride / Spatial ordering |
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| Research Abstract |
The fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an Al_xGa_<1-x>N (x〜0.1) surface using Si as an antisurfactant. Exposing the Al_xGa_<1-x>N surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (10^<10>-10^<11> cm^<-2> with controllable dot sizes was ichieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots.
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Report
(3 results)
Research Products
(13 results)
