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Substrate using epitaxial Al_2O_3 film for hetero-epitaxial growth and device applications

Research Project

Project/Area Number 13555093
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section展開研究
Research Field Electronic materials/Electric materials
Research InstitutionToyohashi University of Technology

Principal Investigator

ISHIDA Makoto  Toyohashi University, Faculty of Engineering, Professor, 工学部, 教授 (30126924)

Co-Investigator(Kenkyū-buntansha) OSHIMA Naoki  Yamaguchi University, Faculty of Engineering, Lecturer, 工学部, 講師 (70252319)
SAWADA Kazuaki  Toyohashi University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (40235461)
WAKAHARA Akihiro  Toyohashi University, Faculty of Engineering, Associate Professor, 工学部, 助教授 (00230912)
Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥13,500,000 (Direct Cost: ¥13,500,000)
Fiscal Year 2003: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2002: ¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 2001: ¥6,600,000 (Direct Cost: ¥6,600,000)
Keywordsepitaxial / Al_2O_3 / alumina / heteroepitaxy / GaN / Ferroelectlic film / FeRAM / Pyroelastric Sensor / Al2O3 / エピタキシャル成長 / 単結晶絶縁膜 / メモリー素子 / ヘテロ成長用基盤 / GaN / 強誘電体メモリ / 基板
Research Abstract

We proposed the use of an epitaxial γ-Al_2O_3 film as a buffer layer to form epitaxial PZT thin file and, epitaxial Pt films on Si substrates. The epitaxial γ-Al_2O_3 films were grown on a Si substrate using chemical vapor deposition (CVD) and their applications have been reported γ-Al_2O_3 is spinel structure as is MgO. The lattice mismatch between γ-Al_2O_3 and Pt is smaller than that between MgO and Pt. This suggests a possibility of growing epitaxial Pt films on γ-Al_2O_3. We report the first successful formation of epitaxial Pt films and PZT film on Si substrates by using an epitaxial γ-Al_2O_3 buffer layer. Epitaxial Pt films were successfully RF sputtered on Si substrates using an epitaxial γ-Al_2O_3 buffer layer. The Crystallinity of the Pt films was strongly affected by deposition temperature. XRD and RHEED patterns indicated that an epitaxial Pt film was grown on the γ-Al_2O_3/Si substrate. Epitaxial Pt on γ-Al_2O_3/Si substrates could provide a possible way to improve the performance of a device whose properties depend on the orientation of a ferroelectric film.

Report

(4 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (50 results)

All Other

All Publications (50 results)

  • [Publications] Md.Shahjahan, R.Ito, K.Sawada, M.Ishida: "Current Voltage Characteristics with Different Well and Barrier Thickness of Resonant Tunneling Diode Fabricated by epi-Si γ-Al_2O_3 Heterostructures"Journal of IEEE Transaction of Electron Devices. (to be published). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Md.Shahjahan, T.Okada, K.Sawada, M.Ishida: "Effect of Annealing on the Physical and Electrical Properties of Ultrathin Crystalline γ-Al_2O_3 High-k Dielectric Deposited on Si-Substrates"Japanese Journal of Applied Physics. (in print). (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Akai, K.Hirabayashi, M.Yokawa, K.Sawada, M.Ishida: "Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial γ-Al_2O_3(001) buffer layer"Journal of Crystal Growth. Vol.264,No.1-3. 463-467 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Manoj Kumar, R.M.Mehra, A.Wakahara, M.Ishida, A.Yoshida: "Epitaxial growth of high quality AnO : Al film on Silicon with a thin γ-Al_2O_3"Journal of Applied Physics. Vol.93,No.7. 3837-3843 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Akai, K.Sawada, M.Ishida: "Fabrication of Pb(Zr, Ti)O_3 films on epitaxial γ-Al_2O_3(001)/Si(001) substrates"Journal of Crystal Growth. Vol.259,No.1-2. 90-94 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Akai, M.Yokawa, K.Hirabayashi, K.Sawada, M.Ishida: "Ferroelectric Thin Fllms on Epitaxial γ-Al_2O_3/Si substrates"Technical Report of IEICE. Vol.103,No.51. 61-65 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Oshima, S.Okamoto, K.Shibata, Y.Orihashi, S.Kageyama, M.Ishida, T.Yazawa, Gomes Camargo: "Epitaxial Growth of GaN by Gas Source Morecular Beam Epitaxy Using NH_3"Transactions of the Materials Research Society of Japan. 27(2). 475-478 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] A.Wakahara, N.Kawamura, H.Oishi, H.Okada, A.Yoshida, M.Ishida: "Heteroepitaxial Growth of GaN on γ-Al_2O_3/Si Substrate by Organometallic Vapor Phase Epitaxy"Sensors and Metarials. Vol.14,No.5. 263-270 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] A.Wakahara, H.Oishi, H.Okada, A.Yoshida, Y.Koji, M.Ishida: "Organometallic vapor phase epitaxy of GaN on Si(111) with a γ-Al_2O_3 epitaxial intermediate layer."Journal of Crystal Growth. 236. 21-25 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Md.Shahjahan, Y.Koji, K.Sawada, M.Ishida: "Fabrication of Resonance Tunnel Diode by γ-Al_2O_3/Si Multiple Heterostructures"Japanese Journal of Applied Physics. Vol.41,Part.1,No.4B. 2602-2605 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Md.Shahjahan, N.Takahashi, K.Sawada, M.Ishida: "Fabrication and Electrical Characterization of Ultrathin Crystalline Al_2O_3 Gate Dielectric Films on Si(100) and Si(111) by Molecular Beam Epitaxy"Japanese Journal of Applied Physics. Vol.41,part2,No.12B. L1474-L1477 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Md.Shahjahan, R.Ito, K.Sawada, M.Ishida: "Current-Voltage Characteristics with Different Well and Barrier Thickness of Resonant Tunneling Diode Fabricated by epitaxial-Si/g-Al_2O_3 Heterostructures"Journal of IEEE Transaction of Electron Devices. (to be submitted). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Md.Shahjahan, T.Okada, K.Sawada, M.Ishida: "Effect of Annealing on the Physical and Electrical Properties of Ultrathin Crystalline g-Al_2O_3 High-k Dielectric Deposited on Si-Substrates"Japanese Journal of Applied Physics. (in print). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Akai, K.Hirabayashi, M.Yokawa, K.Sawada, M.Ishida: "Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial g-Al_2O_3(001) buffer layer"Journal of Crystal Growth. Vol.264, No.1-3. 463-467 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Manoj Kumar, R.M.Mehra, A.Wakahara, M.Ishida, A.Yoshida: "Epitaxial growth of high quality ZnO : Al film on Silicon with a thin g-Al_2O_3"Journal of Applied Physics. Vol.93 No.7. 3837-3843 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Akai, K.Sawada, M.Ishida: "Fabrication of Pb(Zr, Ti)O_3 films on epitaxial g-Al_2O_3(001)/Si(001) substrates"Journal of Crystal Growth. Vol.259, No.1-2. 90-94 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] D.Akai, M.Yokawa, K.Hirabayashi, K.Sawada, M.Ishida: "Ferroelectric Thin Films on Epitaxial g-Al_2O_3/Si substrates"Technical Report of IEICE. Vol.103, No.51. 61-65 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] N.Oshima, S.Okamoto, K.Shibata, Y.Orihashi, S.Kageyama, M.Ishida, T.Yazawa, Gomes Camargo: "Epitaxial Growth of GaN by Gas Source Morecular Beam Epitaxy Using NH_3."Transactions of the Materials Research Society of Japan. 27(2). 475-478 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] A.Wakahara, N.Kawamura, H.Oishi, H.Okada, A.Yoshida, M.Ishida: "Heteroepitaxial Growth of GaN on g-Al_2O_3/Si Substrate by Organometallic Vapor Phase Epitaxy"Sensors and Materials. Vol.14, No.5. 263-270 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] A.Wakahara, H.Oishi, H.Okada, A.Yoshida, Y.Koji, M.Ishida: "Organometallic vapor phase epitaxy of GaN on Si (111) with a g-Al_2O_3 epitaxial intermediate layer"Journal of Crystal Growth. 236. 21-25 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Md.Shahjahan, Y.Koji, K.Sawada, M.Ishida: "Fabrication of Resonance Tunnel Diode by g-Al_2O_3/Si Multiple Heterostructures"Japanese Journal of Applied Physics. Vol.41, Part.1, No.4B. 2602-2605 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Md.Shahjahan, N.Takahashi, K.Sawada, M.Ishida: "Fabrication and Electrical Characterization of Ultrathin Crystalline Al_2O_3 Gate Dielectric Films on Si(100) and Si(111) by Molecular Beam Epitaxy"Japanese Journal of Applied Physics. Vol.41, Part.2, No.12B. L1474-L1477 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Manoj Kumar, R.M.Mehra, A.Wakahara, M.Ishida, A.Yoshida: "Epitaxial growth of high quality AnO : Al film on Silicon with a thin γ-Al2O3"JOURNAL OF APPLIDE PHYSICS. VOL.93, NO.7. 3837-3843 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Daisuke Akai, Kazuaki Sawada, Makoto Ishida: "Fabrication of Pb(Zr,Ti)O_3 Films on Epitaxial γ-Al2O_3(001)/Si(001) Substrates"Journal of Crystal Growth. Vol.259, No.1-2. 90-94 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Daisuke Akai, Keisuke Hirabayashi, Mikako Yokawa, Kazuaki Sawada, Makoto Ishida: "Epitaxial Growth of Pt(001) Thin Films on Si Substrates using an Epitaxial γ-Al2O_3(001) Buffer Layer"Journal of Crystal Growth. Vol.264, No.1-3. 463-467 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Daisuke Akai, Mikako Yokawa, Keisuke Hirabayashi, Kazuaki Sawada, Makoto Ishida: "Ferroelectric Thin Films on Epitaxial γ-Al_2O_3/Si substrates"Technical Report of IEICE. Vol.103, No.51. 61-65 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Takayuki Okada, Mohammad Shahjahan, Kazuaki Sawada, Makoto Ishida: "Fabrication and electrical characterization of MOSFET with crystalline γ-Al_2O_3 as gate insulator"The Japan Society of Applied Physics (The 64th Autumn meeting). No.2. 734 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Mohammad Shahjahan, Ryoki Ito, Kazuaki Sawada, Makoto Ishida: "Variation of peak current density of double barrier resonant tunneling diode fabricated by epi-Si/γ-Al_2O_3 heterostructures"The Japan Society of Applied Physics (The 64th Autumn meeting). No.3. 1253 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Takayuki Okada, Ryoki Ito, Mohammad Shahjahan, Kazuaki Sawada, Makoto Ishida: "Electrical Properties of Crystalline γ-Al_2O_3 Films Using Conductive-AFM and MISFETs with Alminum Gates"International Conference on Solid State Device and Materials 2003. 514-515 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Mohammad Shahjahan, Takayuki Okada, Kazuaki Sawada, Makoto Ishida: "Effect of Nitrogen Annealing on the Electrical Properties of Ultrathin Crystalline γ-Al_2O_3 High-k Dielectric Films Deposited on Si(111) Substrates"International Conference on Solid State Device and Materials 2003. 522-523 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Mohammad Shahjahan, Ryoki Ito, Kazuaki Sawada, Makoto Ishida: "Dependence of Peak to Valley Current Ratio on the Well Thickness of a Double Barrier Resonant Tunneling Diode Fabricated by epi-Si/γ-Al_2O_3 Heterostructures"Silicon Nanoelectronics Workshop-2003. 108-109 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Jang-Seop Kim, Tmohiro Hoshi, Kazuaki Sawada, Makoto Ishida: "Planar MIS Type Field Emitter Fabrication on Epitaxial Al/Al_2O_3/Si(111) structure"The 16th International Vacuum Microelectronics Conference. 269-270 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Takayuki Okada, Mohammad Shahjahan, Kazuaki Sawada, Makoto Ishida: "Electrical characteristics of MOSFET with crystalline γ-Al_2O_3 as gate insluator"The Japan Society of Applied Physics (The 51st Spring meeting). No.2. 893 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Khatun Halima, Mohammad Shahjahan, Takayuki Okada, Kazuaki Sawada, Makoto Ishida: "Evaluation of Epi-Si/γ-Al_2O_3 Hetero structure by AFM and Spectroscopic Ellipsometry"The Japan Society of Applied Physics (The 51st Spring meeting). No.3. 1542 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Mikako Yokawa, Daisuke Akai, Kazuaki Sawada, Makoto Ishida: "Fabrication of Pb(Zr_x/Ti_<1-x>)O_3 thin films on epitaxial Pt/Al_2O_3/Si"The Japan Society of Applied Physics (The 51st Spring meeting). No.2. 600 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Daisuke Akai, Kouji Matsushita, Mikako Yokawa, Kazuaki Sawada, Makoto Ishida: "Preparation and Chatacterization of PbTiO_3 and (Pb,La)TiO_3 Thin Films on Pt/γ-Al_2O_3/Si Substrates"The Japan Society of Applied Physics (The 51st Spring meeting). No2. 601 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Daisuke Akai, Kazuaki Sawada, Makoto Ishida: "Preparation and Characterization of (Bi,La)_4Ti_3O_<12> Thin Films on Epitaxial γ-AL_2O_3/Si Substrates"The Japan Society of Applied Physics (The 51st Spring meeting). No.2. 619 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Ryota Tanaka, Susumu Hatakenaka, Akihiro Wakahara: "Heteroepitaxial growth of GaN on Si(111) substrate using γ-Al_2O_3 as an intermediate layer"The Japan Society of Applied Physics (The 51st Spring meeting). No.1. 369 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] M.Shahjahan, Y.Koji, K.Sawada, M.Ishida: "Fabrication of Resonance Tunnel Diode by g-Al_2O_3/SiMultiple Heterostructures"Japanese Journal of Applied Physics Part 1. 41・4B. 2602-2605 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Shahjahan, N.Takahashi, K.Sawada, M.Ishida: "Fabrication and Electrical characterization of Ultrathin Crystalline Al_2O_3 Gate Dielectrics on Si(100) and Si(111) by Molecular Beam Epitaxy"Japanese Journal of Applied Physics Part 2. 41・12B. L1474-L1477 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Wakahara, N.Kawamura, H.Oishi, H.Okada, A.Yoshida, M.Ishida: "Heteroepitaxial Growth of GaN on γ-A1203/Si Substrate by Organometallic Vapor Phase Epitaxy"Sensors and Materials. Vol.14, No.5. 263-270 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Ohshima, S.Okamoto, K.Shibata, Y.Orihashi, S.Kageyama, M.Ishida, T.Yazawa, Gomes Camargo: "Epitaxial Growth of GaN by Gas Source Morecular Beam Epitaxy Using NH3"Transactions of the Materials Research Society of Japan. 27(2). 475-478 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Shahjahan.R.Ito, K.Sawada, M.Ishida: "Dependence of Peak to Valley Current Ratio on the Well thickness of a Double Barrier Resonant Tunneling Diode Fabricated by epi-Si / g-Al203 Heterostructures"Extended Abstracts (The 63rd Autumn Meeting, 2002) ; The Japan Society of Applied Physics. No.3. 1203 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] D.Akai, K.Sawada, M.lshida: "Preparation and Characterization of SrBi2Ta209 thin film on gamma-Al203(100)/Si(100) substrate"Extended Abstracts (The 63rd Autumn Meeting, 2002) ; The Japan Society of Applied Physics. No.2. 444 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Wakahara, H.Ohishi, H.Okada, A.Yoshida, M.Ishida: "Organometallic Vapor Phase Epitaxy of GaN on Si(111)with a γ-Al2O3 Epitaxial Intermediate layer"Abstracts of the 13th Int.Conf.on Crystal Growth,11th Int.Conf.on Vapor Growth and Epitaxy(July 30-Aug.4,Kyoto,2001). 308-308 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] A.Wakahara, H.Ohishi, H.Okada, A.Yoshida, Y.Koji, M.Ishida: "Organometallic Vapor Phase Epitaxy of GaN on Si(111)with a γ-Al2O3 Epitaxial Intermediate layer"J.Crystal Growth. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] A.Wakahara, N.Kawamura, H.Ohishi, H.Okada, A.Yoshida, M.Ishida: "Heteroepitaxial Growth of GaN on γ-Al2O3/Si Substrate by Organometallic Vapor Phase Epitaxy"Sensors and Materials. (accepted for publication). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Shahjahan, N.Takahashi, K.Sawada, M.Ishida: "Fabrication and Electrical Characterization of Ultra Thin Epitaxial γ-Al2O3 Gate Dielectric Films on Si(100)by Molecular Beam Epitaxy(MBE)"Extended Abstracts of International Workshop on Gate Insulator(IWGI). 160-164 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Daisuke Akai, Kazuaki Sawada, Makoto Ishida: "Highly(100)oriented PZT films on epitaxial Al2O3(100)on Si(100)"Abstracts of the 13th Int.Conf.on Crystal Growth,11th Int.Conf.on Vapor Growth and Epitaxy(July 30-Aug.4,Kyoto,2001). 331-331 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Shahjahan, K.Koji, K.Sawada, M.Ishida: "Fabrication of Resonance Tunnel Diode by γ-Al2O3/Si Multiple Heterostructures"Jpn.J.Appl.Phys. (in press). (2002)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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