| Project/Area Number |
13555170
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 展開研究 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
FUNAKUBO Hiroshi Tokyo Inst. of Tech, Dep. Innov. Eng. Mater, Associate. Prof., 大学院・総合理工学研究科, 助教授 (90219080)
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| Co-Investigator(Kenkyū-buntansha) |
MIZUTANI Nobuyasu Tokyo Inst. of Tech, Dep. Mater. Eng. Sci, Prof., 大学院・理工学研究科, 教授 (60016558)
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥9,100,000 (Direct Cost: ¥9,100,000)
Fiscal Year 2002: ¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 2001: ¥7,100,000 (Direct Cost: ¥7,100,000)
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| Keywords | ferroelectric / environmental friendly / Bi_4Ti_3O_<12>- based / MOCVD / Bi_4Ti_O_<12> |
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| Research Abstract |
The purpose of the present research is the development of lead-free ferroelectric thin films. The obtained results are summarized as follows :
1. By the substitution of the lanthanide elements of the Bi site in psudoperovskite of Bi_4Ti_3O_<12>, the ferroelectric properties of Bi_4Ti_3O_<12> was dramatically improved.
2. Especially Nd doped one showed large remanent polarization above 35・C/cm^2, which was compatible to that of Pb(Zr_<0.5>Ti_<0.5>)O_3 films.
3. Good ferroelectricity was observed for the La doped films even at 500oC, which is useful for the device applications
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