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Atomistic tunnelig barrier of heteroepitaxial SiO_2/Si(001)

Research Project

Project/Area Number 13640322
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field 固体物性Ⅰ(光物性・半導体・誘電体)
Research InstitutionThe University of Electro-Communications

Principal Investigator

NATORI Akiko  The University of Electro-Communications, Faculty of Electro-Communications, Professor, 電気通信学部, 教授 (50143368)

Co-Investigator(Kenkyū-buntansha) NAKAMURA Jun  The University of Electro-Communications, Faculty of Electro-Communications, Research Associate, 電気通信学部, 助手 (50277836)
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 2002: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2001: ¥2,400,000 (Direct Cost: ¥2,400,000)
Keywordsvalence band offset / SiO_2 / Si / tunneling barrier / hole penetration depth / silicon dioxide
Research Abstract

Energy dispersion relation and probability distribution of the Bloch function at the band edge were calculated for SiO2/Si(100) super-lattice structure, using the density functional first-principles calculation. From the band edge energy and the probability distribution of the Bloch function, novel evaluation method of valence band offsets are proposed. This method can be available even if the layer thickness of the super-lattice is very thin, although the conventional method is appropriate for thick layers.
The following results have been obtained.
(1) SiO2 layer thickness dependence of valence band offsets and corresponding penetration depth of a hole : The valence band offsets decreases as SiO2 layer thickness decreases, due to decrease of the energy gap of SiO2. The penetration depth of a hole gives a consistent result with the valence band offset
(2) Si layer thickness dependence of valence band offsets and energy gap : The valence band offset decreases and the energy gap increases, as Si layer thickness decreases. This is due to quantum confinement effect in Si layer.
(3) Carrier injection dependence of valence band offsets : The valence band offsets increases as electron concentration increases, although the valence band offset decreases as hole concentration increases. This is attributed to change of the electrostatic potential by carrier injection.

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (9 results)

All Other

All Publications (9 results)

  • [Publications] A.Natori: "Dynamics of c(4x2) phase transition in Si(100) surfaces"Appl. Surf. Sci.. (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Z.Zhang: "Atomic Structure of the Ge/Si(113)-(2x2) surface"Phys. Rev. Lett.. 88. 256101-1-256101-4 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] A.Natori: "Dynamics of C(4×2) phase transition in Si(100) surfaces"Appl. Surf. Sci.. (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Z.Zhang: "Atomic structure of the Ge/Si(113)-(2×2) surface"Phys. Rev. Lett.. 88. 256101-1-4 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] A.Natori: "Dynamics of C(4×2) phase transition in Si(100) surfaces"Appl. Surf. Sci.. 212. 705-710 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Z.Zhang: "Atomic structure of the Ge/Si(113)-(2×2) surface"Phys. Rev. Lett.. 88. 256101-1-256101-4 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Osanai: "Dimer buckling dynamics in the vicinity of missing dimers on Si(100)surfaces"Surf. Sci. 493. 319-324 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] M.Murayama: "Au-Si bondind on Si(111)Surfaces"Jpn. J. Appl. Phys,. 40. 6976-6979 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] J.Nakamura: "Structural Stability of the Ge/Si(113)-2×2surface"Proc. 6th Sympo, on Atomic-Scale Surface and Interfacs Dynamics. 51-54 (2002)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2020-05-15  

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