| Project/Area Number |
13650007
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | University of Yamanashi |
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Principal Investigator |
NAKAGAWA Kiyokazu University of Yamanashi, Faculty of Engineering, Professor, 工学部, 教授 (40324181)
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| Co-Investigator(Kenkyū-buntansha) |
SHIRAKI Yasuhiro The University of Tokyo, Graduate School of Engineering, Professor, 大学院・工学系研究科, 教授 (00206286)
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| Project Period (FY) |
2001 – 2002
|
| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 2002: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 2001: ¥2,600,000 (Direct Cost: ¥2,600,000)
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| Keywords | SiGe heterostructure / virtual substrate / high mobility / chemical mechanical polishing / ion implantation / strain relaxation / 擬似基 / 科学機械研磨法 |
|---|
| Research Abstract |
We have developed a new technique to form fully relaxed SiGe buffer layers, for fabrication of strained SiGe heterostructure devices. This technique has utilized an ion implantation method. Extremely thin (~100nm) SiGe buffer layers with almost full strain relaxation were obtained by Ar ion implantation into Si substrates before SiGe growth. The amount of strain relaxation was found to depend on ion dose and implantation energy, indication that ion-implantation-induced defects play an important role in strain relaxation.
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