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High rate deposition of Mgh hardness carbide thin films using a dual source dc magnetron sputtering method

Research Project

Project/Area Number 13650097
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Materials/Mechanics of materials
Research InstitutionHimeji Institute of Technology

Principal Investigator

INOUE Shozo  Himeji Institute of Technology, Graduate School of Engineering, Assoc. Prof., 工学研究科, 助教授 (50193587)

Co-Investigator(Kenkyū-buntansha) KOTERAZAWA Keiji  Himeji Institute of Technology, Graduate School of Engineering, Professor, 工学研究科, 教授 (50047594)
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥4,000,000 (Direct Cost: ¥4,000,000)
Fiscal Year 2002: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2001: ¥3,200,000 (Direct Cost: ¥3,200,000)
KeywordsTiC / carbide films / magnetron sputtering / multilayer films
Research Abstract

Reactive sputtering is one of the most promising techniques for depositing carbide films, such as TiC, because it allows to deposit carbide coatings on the substrate at a low temperature. For depositing the carbide films by means of reactive sputtering, a pure metal target is usually sputtered by Ar and hydrocarbon mixed gas. In this case, the deposition rate should not be so high since the low-sputter-yield carbide is formed on the target surface. Control of the film composition is also difficult because of the so-called hysteresis problem. If the solid carbon target can be used as a carbon source for depositing carbide films, these disadvantages should be dispelled. In this study, we have tried to deposit TiC films by a dual source magnetron sputtering method. Furthermore, the Ti/C, TiC/C and TiC/Ti multilayer films have also been investigated as advanced hard coatings.
Firstly, we have determined the deposition conditions for depositing stoichiometric TiC films by dual source magnetron sputtering. Then, Ti/C, TiC/C and TiC/Ti multilayer films with various periods were deposited onto glass substrates by an alternative sputtering. Ti/C and TiC/C multilayer structures, of which periods were shorter than 1.7nm, can be realized. On the other hand, TiC/Ti multilayer structure with the period less than 2.6nm can not be confirmed. The hardness of Ti/C multilayer films increases rapidly as the period decreases less than 2nm. The hardness of TiC/Ti increases monotonically with decreasing its period. On the contrary, the hardness of TiC/C films decreases as the period decreases because of micro-cracking. Among these multilayer structures, TiC/C films showed the highest thermal stability in vacuum. In the air atmosphere, on the contrary, TiC/Ti films revealed the highest stability. This should be caused by the instability of the pure carbon layer at above 600°C.

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (3 results)

All Other

All Publications (3 results)

  • [Publications] 井上 尚三 他: "スパッタリング法によって作製したTi/C多層薄膜の構造と機械的性質"日本金属学会誌. 第66巻. 778-783 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] S. Inoue, K. Nagai, M. Niibe, K. Koterazawa and M. Iwasa: "Structure and Mechanical Properties of Ti/C Multilayer Films Deposited by Sputtering"J. Japan Inst. Metals. 66 no. 7. 778-783 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 井上尚三他: "スパッタリング法によって作製したTi/C多層薄膜の構造と機械的性質"日本金属学会誌. 66巻・7号. 778-783 (2002)

    • Related Report
      2002 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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