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STUDY OF POINT DEFECTS IN GaN AND RELATED COMPOUND SEMICONDUCTORS BY MEANS OF POSITRON ANNIHILATION

Research Project

Project/Area Number 13650332
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionUNIVERSITY OF TSUKUBA

Principal Investigator

UEDONO Akira  UNIVERSITY OF TSUKUBA, INSTITUTE OF APPLIED PHYSICS, ASSOCIATE PROFESSOR, 物理工学系, 助教授 (20213374)

Co-Investigator(Kenkyū-buntansha) CHICHIBU Shigefusa  UNIVERSITY OF TSUKUBA, INSTITUTE OF APPLIED PHYSICS, ASSOCIATE PROFESSOR, 物理工学系, 助教授 (80266907)
AKIMOTO Katsuhiro  UNIVERSITY OF TSUKUBA, INSTITUTE OF APPLIED PHYSICS, PROFESSOR, 物理工学系, 教授 (90251040)
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 2002: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2001: ¥1,200,000 (Direct Cost: ¥1,200,000)
KeywordsPOSITRON ANNIHILATION / MONOENERGETIC POSITRON BEAM / GaN / POINT DEFECT / IMPURITY DOPING / REAR EARTH / ZnO / Tb / Eu
Research Abstract

Positron annihilation is an established technique to investigate point defects in materials. We probed defects in Eu-and Tb-doped GaN films grown on sapphire substrates by gas-source molecular beam epitaxy with a monoenergetic positron beam. In both Eu- and Tb-doped samples, we observed vacancy clusters consisting of two or more vacancies. These defects were introduced by replacing Ga with rare-earth elements, and resulting in distortion of the host matrix. We studied the correlation between luminescence originating from the intra-4f-transitions of Eu^<3+> and the crystal quality of GaN film. In film doped at 2-at.% Eu, the mean open volume of the vacancies near the interface between the GaN film and the sapphire substrate was found to be larger than that in the subsurface region. The increase in the open volume of the defects correlated with the lowering coordination symmetry of Eu^<3+> and the increase in the transition rate of its 4f-electrons.
Zinc oxide (ZnO) thin films grown on ScAlMgO_4 substrates were also studied. We measured Doppler broadening spectra of annihilation radiation and photoluminescence spectra for the ZnO films deposited by laser molecular-beam epitaxy and single crystal ZnO. Although the lifetime of positrons in single crystal ZnO was close to the lifetime of positrons annihilated from the free state, the diffusion length of positrons was shorter than that for typical defect-free materials. We attribute this to the scattering of positrons by native defects. For the ZnO films, we observed a correlation between the defects and the lifetime of bound exciton emissions τ_<Ex> ; the main defect species detected by positron annihilation was Zn vacancies or other related defects. Isochronal annealing at 750-850℃ was found to introduce additional vacancy-type defects into the film, although the value of τ_<Ex> was scarcely changed by the annealing.

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (10 results)

All Other

All Publications (10 results)

  • [Publications] A.Uedono et al.: "Defects in ZnO Thin Films Grown on ScAlMgO_4 Substrates Probed by a Monoenergetic Positron Beam"J.Appl.Phys.. 93. 2481-2485 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] A.Uedono et al.: "Defects in Eu-and Tb-doped GaN Probed Using a Monoenergetic Positron Beam"J.Appl.Phys.. 93. 2481-2485 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T.Koida et al.: "Correlation Between the Photoluminescence Lifetime and Defect Density in Bulk and Epitaxial ZnO"Appl.Phys.Lett.. 82. 532-534 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z.Q. Chen, SF. Chichibu, H. Koinuma: "Defects in ZnO Thin Films Grown on ScAlMgO_4 Substrates Probed by a Monoenergetic Positron Beam"J. Apply. Phys.. 93. 2481-2485 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] A. Uedouo, H. Bang, K. Horibe, S. Morishima, K. Akimoto: "Defects in Eu- and Tb-doped GaN Probed Using a Monoenergetic Positron Beam"J. Appl. Phys.. 93. 5181-5184 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Koida, S.F. Chichibu, A. Uedono A. Tsukazaki, M. Kawasaki, T. Sota, Y. Segawa, H. Koinuma: "Correlation Between the Photoluminescence Lifetime and Defect Density in Bulk and Epitaxial ZnO"Appl. Phys. Lett.. 82. 532-534 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 上殿明良ほか: "陽電子消滅によるEu及びTbをドープしたGaNの空孔型欠陥の研究"2003年春季第50回応用物理学関連連合講演会. (発表予定).

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Uedono et al.: "Vacancy-type defects in Eu-and Tb-doped GaN probed using monoenergetic positron beam"5^<th> International Conference on Nitride Semiconductor. (発表予定).

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Uedono et al.: "Vacancy-type defects in GaN grown along different polar directions by MOVPE"5^<th> International Conference on Nitride Semiconductor. (発表予定).

    • Related Report
      2002 Annual Research Report
  • [Publications] A.Uedono et al.: "Defects in Eu-and Tb-Doped GaN probed using monoenergetic positron beam"J. Appl. Phys.. May, 15. (2003)

    • Related Report
      2002 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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