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Self-Organization Mechanism and Electronic Properties of Semiconductor Quantum Dots

Research Project

Project/Area Number 13650333
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionUniversity of Tsukuba

Principal Investigator

OKADA Yoshitaka  University of Tsukuba, Institute of Applied Physics, Associate Professor, 物理工学系, 助教授 (40224034)

Co-Investigator(Kenkyū-buntansha) 川辺 光央  筑波大学, 物理工学系, 教授 (80029446)
Project Period (FY) 2001 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2003: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2002: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2001: ¥2,100,000 (Direct Cost: ¥2,100,000)
KeywordsQuantum dots / Self-organized growth / Self-organized quantum dots / Scanning probe microscopy / Conductive probe / Single-electron tunneling / 自己組織化成長技術 / 導電性プローブ / 自己組織化成長 / 人工原子 / 自己組織化ドット / 自己組織化結晶成長 / ドット間結合
Research Abstract

The conductive scanning probe microscope (SPM) technique was used in order to study the electronic properties and self-organization mechanism of InGaAs quantum dots (QDs) grown on GaAs (311)B substrates. The QDs were fabricated by atomic H-assisted molecular beam epitaxy, and Si SPM tips coated with Au, which warrants electrical conductivity were used to measure both the topographic and current images of QDs surface simultaneously. The conductive SPM measurements were performed in vacuum at room temperature and at lowered temperatures. With this technique, the single-electron tunneling events in the QDs of varying sizes, and of any other arbitrary positions on the QDs surface can be studied by using the same conductive AFM tip. It was found that (1) the center of a QD is more conductive than its periphery, and (2) the surface. in between the QDs is highly resistive. The differences in the conductance were due to the local modification of surface bending associated with the surface states. Further, it was found that the conductance becomes spatially uniform at all points over the packed and ordered QDs at low temperatures, which could be explained by lateral coupling of these strained QDs

Report

(4 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • 2001 Annual Research Report
  • Research Products

    (28 results)

All Other

All Publications (28 results)

  • [Publications] A.Ohmae, Y.Okada: "Growth of GaInNAs by Atomic Hydrogen-assisted RF-MBE"Journal of Crystal Growth. 251. 412-416 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Shimizu, Y.Okada: "Growth of high-quality GaAs/Si films for use in solar cell applications"Journal of Crystal Growth. 印刷中. (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] R.Oshima, A.Ohmae, Y.Okada: "Fabrication of self-organized GaInNAs quantum dots by atomic-H assisted RF-molecular beam epitaxy"Journal of Crystal Growth. 281. 11-15 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] R.Oshima 他3名: "Electronic states of self-organized InGaAs quantum dots on GaAs(311)B studied by conductive probe microscope"Physica E. 印刷中. (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] R.Oshima, Y.Okada: "Growth of self-assembled GaInNAs quantum dots by atomic-H assisted RF molecular beam epitaxy"Thin Solid Films. 印刷中. (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] A.Ohmae, Y.Okada: "Growth of GaInNAs by Atomic Hydrogen-assisted RF-MBE"Journal of Crystal Growth. vol.251. 412-416 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Y.Shimizu, Y.Okada: "Growth of high-quality GaAs/Si films for use in solar cell applications"Journal of Crystal Growth. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] R.Oshima, A.Ohmae, Y.Okada: "Fabrication of self-organized GaInNAs quantum dots by atomic-H assisted RF-molecular beam epitaxy"Journal of Crystal Growth. vol.281. 11-15 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] R.Oshima, N.Kurihara, H.Shigekawa, Y.Okada: "Electronic states of self-organized InGaAs quantum dots on GaAs (311)B studied by conductive probe microscope"Physica E. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] R.Oshima, Y.Okada: "Growth of self-assembled GaInNAs quantum dots by atomic-H assisted RF molecular beam epitaxy"Thin Solid Films. (in press). (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] A.Ohmae, Y.Okada: "Growth of GaInNAs by Atomic Hydrogen-assisted RF-MBE"Journal of Crystal Growth. 251. 412-416 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Y.Shimizu, Y.Okada: "Growth of high-quality GaAs/Si films for use in solar cell applications"Journal of Crystal Growth. (印刷中).

    • Related Report
      2003 Annual Research Report
  • [Publications] R.Oshima, A.Ohmae, Y.Okada: "Fabrication of self-organized GaInNAs quantum dots by atomic-H assisted RF-molecular beam epitaxy"Journal of Crystal Growth. 281. 11-15 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] R.Oshima他3名: "Electronic states of self-organized InGaAs quantum dots on GaAs (311)B studied by conductive probe microscope"Physica E. (印刷中).

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Z.Song他7名: "Growth process of quantum dots precisely controlled by an AFM assisted technique"Physica E. (印刷中).

    • Related Report
      2003 Annual Research Report
  • [Publications] R.Oshima, Y.Okada: "Growth of self-assembled GaInNAs quantum dots by atomic-H assisted RF molecular beam epitaxy"Thin Solid Films. (印刷中).

    • Related Report
      2003 Annual Research Report
  • [Publications] Y.Okada 他3名: "Control of dark currents in multi-quantum well solar cells fabricated by atomic H-assisted molecular beam epitaxy"Journal of Crystal Growth. 237-239. 1515-1518 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] M.Miyagi 他4名: "Transport through LnGaAs/GaAs(311)B Quantum Dots Studied by Conductive Scanning Probes"Institute of Physics Conference Series. 170. 561-566 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Okada 他4名: "Self-organized InGaAs quantum dots grown onGaAs (311)B substrate studied by conductive atomic force microscope technique"Journal of Crystal Growth. 245. 212-218 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Z.Song 他6名: "Finely Controlling Quantum Dots on GaAs Surface Patterned by Removing Oxide Dots Formed in Atomic Force Microscope Lithography"Proceedings of the 26th International Conference of the Physics of Semiconductors, Edinburgh (July 2002). (印刷中).

    • Related Report
      2002 Annual Research Report
  • [Publications] R.Oshima 他3名: "Temperature dependence of photoluminescence from long-wavelength InGaAs quantum dots on GaAs(311)B substrate"Proceedings of 2nd International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics, Tsukuba (Sept. 2002). (印刷中).

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Okada 他3名: "High-density self-organized quantum dots with improved size uniformity for optical device applications"Proceedings of SPIE Photonics-Asia 2002, Shanghai (Oct. 2002). (印刷中).

    • Related Report
      2002 Annual Research Report
  • [Publications] Y. Okada 他3名: "Probing the Properties of Self-Organized InGaAs Quantum Dots on GaAs(311)B by Conductive Atomic Force Microscope Tip"MRS Symposium Proceedings. 462. J4.7 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] K. Akahane 他3名: "InGaAs Quantum Dots Embedded in p-n Junction on GaAs(311)B substrate"MRS Symposium Proceedings. 462. J3.11 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] K. Akahane 他3名: "InGaAs quantum dots on GaAs(311)B substrates confined in AlGaAs barrier layers"Journal of Crystal Growth. 222. 53-57 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H. Z. Song 他5名: "Metal-insulator transition in an In_<0.4>Ga_<0.6>As/GaAs(311)B quantum dot superlattice"Physics Letters A. 284. 130-135 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] H. Z. Song 他5名: "In-plane photocurrent of self-assembled In_xGa_<1-x>As/GaAs(311)B quantum dot arrays"Physical Review B. 64. 085303 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Y. Okada 他4名: "Self-organized InGaAs quantum dots on GaAs (311)B studied by conductive atomic force microscope tip"Journal of Applied Physics. 90. 192-196 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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