| Project/Area Number |
13650337
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Kanazawa University |
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Principal Investigator |
INOKUMA Takao Kanazawa Univ., Associate Professor, 自然科学研究科, 助教授 (50221784)
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| Co-Investigator(Kenkyū-buntansha) |
HASEGAWA Seiichi Kanazawa Univ., Professor, 工学部, 教授 (10019755)
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2002: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2001: ¥2,600,000 (Direct Cost: ¥2,600,000)
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| Keywords | Si nanocrystal / Oxide matrix / Thin film / Multilayer / Photonic Crystal / Plasma CVD / Light-emitting Material |
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| Research Abstract |
Nanocrystalline (nc-) Si-dispersed films, which are the silicon oxide thin films including nc-Si dispersively, are a new light-emitting material providing high efficiency visible photolminescence (PL). Previously, we have demonstrated that broad PL band width in the nc-Si-dispersed films can be narrowed effectively using a virtical optical cavity. In this project, we aimed to achieve a higher-order control of the light emission spectra of the nc-Si-dispersed films utilizing a two dimensional (2D) photonic crystal.
The 2D photonic crystal structure was formed using an electron-beam lithography system. A triangular lattice with a lattice constant of 400 nm and 350 nm have been formed. The anisotropic etching of the nc-Si-dispersed films was achieved by using a CF_4-H_2 plasma of an appropriate feed gas ratio. It was confirmed that the propagation of emitted light along the layer was sufficiently suppressed by the 2D photonic crystal structure. On the other hand, the effect of the 2D photonic crystal structure on the spectra and intensity of the emmited light was not clear.
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