| Budget Amount *help |
¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 2002: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2001: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Research Abstract |
In this study, we have prepared diamond-like amorphous carbon (DAC) films using a supermagnetron plasma CVD apparatus, which is suited for highly-uniform high-density plasma. The low resistive (electrical conductive) DAC film composed of carbon atoms was very hard in mechanical characteristics, and it would be suited to form vacuum field emitters. Using this electrical conductive DAC film, we have tried to fabricate 1μm-dotted DAC field emitters, and measured their field emission characteristics.
In this experiment, high speed deposition of DLC films was studied using isobutane (I-C_4H_<10>) including 4 carbon atoms in one molecule. To lower the film resistivity, N_2 gas was introduced as n-type dopant, and we deposited DAV films using intermittent CVD technique to cool substrates. As a result, a film with resistivity of 0.03Ωcm and zero optical band gap was obtained at wafer temperature of 100℃ and rf powers of 1kW/1kW to upper and lower electrodes. Maximum film thickness obtained was 2.1μm and film hardness obtained was about 30GPa which was higher than that of SiO_2(13.1GPa). By FT・IR spectrum measurement, absorption spectra of C-N, C=N and C≡N stretching modes were observed, and N atoms inclusion in DLC films was confirmed. By application of these films to the fabrication of 1μm-dotted DAC field emitters, the low threshold voltage of 10V/μm and maximum emission current density of about 3mA/cm^2 were observed. Through this research, it was found that the application of electrical conductive DAC films to the formation of 1μm-dotted DAC filed emitters was effective to make high performance field emitters.
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