| Project/Area Number |
13650378
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Kobe University |
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Principal Investigator |
OGAWA Matsuto Kobe Univ.School of Electric, & Electon., Prof., 工学部, 教授 (40177142)
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| Project Period (FY) |
2001 – 2002
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| Project Status |
Completed (Fiscal Year 2002)
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| Budget Amount *help |
¥3,200,000 (Direct Cost: ¥3,200,000)
Fiscal Year 2002: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2001: ¥1,700,000 (Direct Cost: ¥1,700,000)
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| Keywords | Non-Equilibrium Green's Function / Tight-Binding Approximation / Nano-Scale MOSFET / Ab-Initio Density Functional Calculation / Quantum Transport Analysis / Device Modeling / Web Hub / 強束縛近似ハミルトニアン / 遺伝的アルゴリズム / ナノデバイス / 量子輸送モデリング / 量子輸送デバイスモデリング |
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| Research Abstract |
The following results have been successfully achieved during allotted period of this project research.
1. Development of Semiconductor Band Structure Calculation Programs Based on Tight-Binding Approximation
Automatic Hamiltonian generation of arbitrary III-V compound semiconductor has been achieved. We have developed a new code to extract tight-binding (TB) parameters of arbitrary crystals such as a diamond, zinc-blende, cubic, or hexagonal crystallographic structures. This code utilizes a genetic algorithm (GA) which enables us to extract tight-binding parameters from results of ab-initio density functional (DFT) band calculation without falling into local minima. As a result, we have extracted various kinds of TB parameters from which we can readily calculate band structures as well as optical properties of compound semiconductors.
2. Quantum Transport Modeling in Nano-scale MOSFETs
We have made use of the non-equilibrium Green's function method to analyze quantum transport phenomena in nano-scale devices, specifically deca-nm size MOSFETs. In the simulation, we have used the material parameters of the crystal we extracted by the GA technique. As a result, it is found that the surface quantization occurs at the Si-SiO2 interface and the electron waves transport from size-quantized modes in one electrode to the surface quatized mode and then to the size-quantized mode in the other electrode. It is demonstrated that the present modeling tool is powerful in the analysis of nano-scale devices where quantum effects play important roles.
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