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Surface "element" imaging by a new scanning probe microscopy

Research Project

Project/Area Number 13650476
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Measurement engineering
Research InstitutionRIKEN (The Institute of Physical and Chemical Research)

Principal Investigator

TANAKA Yoshihito  RIKEN, Coherent xray optics laboratory, Senior researcher, X線干渉光学研究室, 先任研究員 (80260222)

Co-Investigator(Kenkyū-buntansha) ISHII Masashi  SPring-8, Materials Science division, Research Scientist, 高輝度光科学研究センター, 副主幹研究員 (90281667)
Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2002: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 2001: ¥2,100,000 (Direct Cost: ¥2,100,000)
KeywordsProbe microscopy / Local capacitance / XAFS / Site-selectivity / Local structure / Local electronic state / Quantum dot / Surface oxide / 表面元素 / 静電容量 / X線吸収スペクトル / 界面構造 / 自然酸化膜 / 電子捕獲中心 / 化学状態選択 / nm構造 / 量子効果 / チャネル層
Research Abstract

The main research results related to this project are as follows.
2001
(1)We installed a new probe microscopy developed in this project into a beamline of the synchrotron radiation facility, Spring-8. We found that a valence state modulation owing to an inner-shell excitation can be detected by capacitance under the x-ray irradiation.
(2)The photon energy dependence of a local capacitance detected by the microprobe indicated an x-ray absorption fine structure (XAFS) spectrum of the sample surface. This finding indicates that the scanning image with surface chemical information, such as element and its bonding states, can be obtained by this method.
(3)We demonstrated an advanced site-selectivity ; the control of bias voltage applied to the microprobe selects the observable bonding state.
(4)As an industrial application of this method, we successfully observed the site-selective XAFS spectrum of a conduction channel with 〜nm thickness in a transistor.
2002
(1)We observed various sample surfaces, and reached our project goal: establishment of the surface "element" imaging technique.
(2)The advantage of this technique is typically shown in our research: element and structure analyses of electron trap in ultra-thin oxide on semiconductor surface.
(3)Simultaneous measurement of the local structure and its electric property by the microprobe is successfully achieved.
(4)This capacitance detection technique revealed the interface state of buried quantum dot structure. The site-selectivity involved in this technique makes us possible to analyze the inside of the nano-electric devices.
(5)The XAFS spectrum is predictable by molecular orbital calculation. This result shows the reliability and a general guideline for spectrum analysis of this method.

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (26 results)

All Other

All Publications (26 results)

  • [Publications] M.Ishi, K.Ozasa, Y.Aoyagi: "Selective x-ray absoption spectroscopy of self-assembled atom in InAs quantum dot"Microelectroic Engineering. (in press). (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masashi Ishii: "Double Resonance Capacitance Spectroscopy (DORCAS) : A New Experimental Technique for Assignment of Resonant X-ray Absorption Peaks to Surface Sites of Semiconductor"Nuclear Instruments and Methods in Physics Research, Section B. 199. 205-210 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Yoshihito Tanaka: "Optical-switching of X-rays using laser-induced lattice expansion"Journal of Synchrotron Radiation. 9. 96-98 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masashi Ishii: "Site-specific x-ray absorption spectroscopy of electron traps by x-ray induced displacement current measurement"Physical Review B. 65. 085310-1-085310-8 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masashi Ishii: "X-ray Absorption Fine Structure Measurement Using Scanning Capacitance Microscope : Trial for Selective Observation f Trap Centers in 〜nm Region"Japanese Journal of Applied Physics. 41. 4415-4418 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masashi Ishii: "Capacitance x-ray absorption fine structure method using dopant photoionization : x-ray absorption spectroscopy of 〜nm thickness channel in semiconductor device"Japanese Journal of Applied Physics. 40・12. 7129-7134 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 石井真史(共著): "X線吸収分光法-XAFSとその応用"アイピーシー出版. 294 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M. Ishii, K. Ozasa, Y. Aoyagi: "Selective x-ray absorption spectroscopy of self-assembled atom in InAs quantum dot"Microelectronic Engineering. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masashi Ishii: "Double Resonance Capacitance Spectroscopy (DORCAS) : A New Experimental Technique for Assignment of Resonant X-ray Absorption Peaks to Surface Sites of Semiconductor"Nuclear Instruments and Methods in Physics Research. Section B, 199. 205-210 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Yoshihito Tanaka: "Optical-switching of X-rays using laser-induced lattice expansion"Journal of Synchrotron Radiation. 9. 96-98 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masashi Ishii: "Site-specific x-ray absorption spectroscopy of electron traps by x-ray induced displacement current measurement"Physical Review B. 65. 085310-2-085310-8 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masashi Ishii: "X-ray Absorption Fine Structure Measurement Using Scanning Capacitance Microscope : Trial for Selective Observation of Trap Centers in 〜nm Region"Japanese Journal of Applied Physics. 41. 4415-4418 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] Masashi Ishii: "Capacitance x-ray absorption fine structure method using dopant photoionization : x-ray absorption spectroscopy of 〜nm thickness channel in semiconductor device"Japanese Journal of Applied Physics. 40. 7129-7134 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] M.Ishii, K.Ozasa, Y.Aoyagi: "Selective x-ray absorption spectroscopy of self-assembled atom in InAs quantum dot"Microelectronic Engineering. (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Masashi Ishii: "Double Resonance Capacitance Spectroscopy (DORCAS) : A New Experimental Technique for Assignment of Resonant X-ray Absorption Peaks to Surface Sites of Semiconductor"Nuclear Instruments and Methods in Physics Research, Section B. (in press). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] Yoshihiro Tanaka: "Optical-switching of X-rays using laser-induced lattice expansion"Journal of Synchrotron Radiation. 9. 96-98 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Masashi Ishii: "Site-specific x-ray absorption spectroscopy of electron traps by x-ray induced displacement current measurement"Physical Review B. 65. 085310-1-085310-8 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Masashi Ishii: "Capacitance x-ray absorption fine structure measurement using scanning probe : A new method for local structure analysis of surface defects"Physica B. 308-310. 1153-1156 (2001)

    • Related Report
      2002 Annual Research Report
  • [Publications] Masashi Ishii: "X-ray Absorption Fine Structure Measurement Using Scanning Capacitance Microscope : Trial for Selective Observation of Trap Centers in ~nm Region"Japanese Journal of Applied Physics. 41. 4415-4418 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 石井真史(共著): "X線吸収分光法-XAFSとその応用"アイピーシー出版. 294 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Yoshihito Tanaka: "Optical-switching of X-rays using laser-induced lattice expansion"Journal of Synchrotron Radiation. 9(in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Masashi Ishii: "Site-specific x-ray absorption spectroscopy of electron traps by x-ray induced displacement current measurement"Physical Review B. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Masashi Ishii: "Capacitance x-ray absorption fine structure measurement using scanning probe : A new method for local structure analysis of surface defects"Physica B. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Masashi Ishii: "X-ray Absorption Fine Structure Measurement Using Scanning Capacitance Microscope : Trial for Selective Observation of Trap Centers in 〜nm Region"Japanese Journal of Appliecd Physics. (in press). (2002)

    • Related Report
      2001 Annual Research Report
  • [Publications] Masashi Ishii: "Capacitance XAFS method : Site-selective analysis of low dimensional structures"Journal of Synchrotron Radiation. 8. 331-333 (2001)

    • Related Report
      2001 Annual Research Report
  • [Publications] Masashi Ishii: "Capacitance x-ray absorption fine structure method using dopant photoionization : x-ray absorption spectroscopy of 〜nm thickness channel in semiconductor device"Japanese Journal of Applied Physics. 40・12. 7129-7134 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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