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Mesoscopic studies on photo- induced magnetic effects in magnetic semiconductors

Research Project

Project/Area Number 13650736
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Inorganic materials/Physical properties
Research InstitutionTokyo Institute of Technology

Principal Investigator

HASEGAWA Tetsuya  Tokyo Institute of Technology, Frontier Collaborative Research Center, Associate Professor, フロンティア創造共同研究センター, 助教授 (10189532)

Project Period (FY) 2001 – 2002
Project Status Completed (Fiscal Year 2002)
Budget Amount *help
¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 2002: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2001: ¥2,300,000 (Direct Cost: ¥2,300,000)
Keywordsmagnetic semiconductor / (Ga, Mn) As / scanning SQUID microscope / magnetic domain / stripe domain / photo-induced magnetism / (Ga, Mn)As
Research Abstract

Diluted magnetic semiconductors (DMS) are key materials for spin electronics. However, their magnetic structures in a microscopic sense, which are important for applications, have been scarcely studied, so far. Here, we performed direct observations of magnetic domain structures in (Ga. Mn) As thin films, which is a typical DMS based on III-V semiconductors, with a thickness of t=1.0 and 0.2μm, by using a scanning SQUID microscope (SSM). For the t=0.2μm film, furthermore, we investigated the photo-irradiation effects on magnetic properties.
(Ga. Mn) As thin films with in-plane magnetization were grown by the MBE technique at 25C. The Mn contents were 4.7% and 5.3% for t=1.0μm and t=0.2μm, films, respectively. SSM measurements were done at low temperatures ranging from 3K to 100K. The instrument senses the magnetic field perpendicular to the sample surface, Bz.
From the SSM observations, we found anomalous circular domains for the t= 1.0μm film. The leakage field generated from the domain … More boundaries is weaker than the expectation, implying that multiple domains exist along the perpendicular direction. For the t=0.2μm film. In contrast, we observed ordinary stripe-shaped domains. The leakage field reached to 300μT, which is close to the calculated value. This tells us that the t=0.2μm film is composed of a single domain perpendicular to the film surface.
Next, we have examined photo-induced effects on the t=0.2μm film. As a result, it was found that the Bz value under irradiation is approximately 1.2 times larger than the that before irradiation. The enhanced filed returned to the original one. But the reaction is substantially slow. At 3K, indeed, it took about 50min to reach to maximum. The reaction rate is decreased with increasing temperature. In addition, we confirmed that the rate is proportional to the intensity of light. In the present experiment, we observed, at the first time, that magnetism of (Ga, Mn) As can be enhanced by a relatively weak laser beam of 0.02mW/cm2. Less

Report

(3 results)
  • 2002 Annual Research Report   Final Research Report Summary
  • 2001 Annual Research Report
  • Research Products

    (9 results)

All Other

All Publications (9 results)

  • [Publications] T.Fukumura, T.Shono, K.Inaba, T.Hasegawa, H.Koinuma, F.Matsuura, H.Ohono: "Magnetic Domain Structure of a Ferromagnetic Semiconductor (Ga,Mn)As Observed with Scanning Probe Microscopes"Physica E. 10. 135-138 (2001)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 福村知昭, 長谷川哲也: "走査型プローブ顕微鏡の磁性半導体及び超巨大磁気抵抗材料への適用"表面科学. 23. 233-238 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 長谷川哲也: "走査SQUID顕微鏡の強磁性材料研究への応用"まてりあ. 41. 864-865 (2002)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Fukumura, T. Shono, K. Inaba, T. Hasegawa, H. Koinuma, F. Matsuura and H. Ohono,: "Magnetic Domain Structure of a Ferromagnetic Semiconductor (Ga, Mn) As Observed with Scanning Probe Microscopes"Physica E. 10. 135-138 (2001)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Fukumura and T. Hasegawa: "Applications of scanning probe microscopes to magnetic semiconductors and CMR materials"Hyomen Kagaku (Surface Science). 23. 233-238 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] T. Hasegawa: "Applications of scanning SQUID microscope to ferromagnetic materials"Material. 41. 864-865 (2002)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2002 Final Research Report Summary
  • [Publications] 福村知昭, 長谷川哲也: "走査型プローブ顕微鏡の磁性半導体及び超巨大磁気抵抗材料への適用"表面科学. 23. 233-238 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 長谷川哲也: "走査SQUID顕微鏡の強磁性材料研究への応用"まてりあ. 41. 864-865 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Fukumura, T.Shono, K.Inaba, T.Hasegawa, H.Koinuma, F.Matsuura, H.Ohono: "magnetic Domain Structure of a Ferromagnetic Semiconductor (Ga, Mn)As Observed with Scanning Prove Microscopes"Physica E. 10. 135-138 (2001)

    • Related Report
      2001 Annual Research Report

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Published: 2001-04-01   Modified: 2016-04-21  

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