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極薄Geチャネルにおけるキャリア輸送機構の理解と制御

Research Project

Project/Area Number 13F03058
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section外国
Research Field Electronic materials/Electric materials
Research InstitutionThe University of Tokyo

Principal Investigator

鳥海 明  東京大学, 工学(系)研究科(研究院), 教授 (50323530)

Co-Investigator(Kenkyū-buntansha) LEE Choong Hyun  東京大学, 工学(系)研究科(研究院), 外国人特別研究員
LEE Choong Hyun  東京大学, 大学院工学系研究科, 外国人特別研究員
Project Period (FY) 2013-04-01 – 2015-03-31
Project Status Completed (Fiscal Year 2014)
Budget Amount *help
¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 2014: ¥1,500,000 (Direct Cost: ¥1,500,000)
Fiscal Year 2013: ¥1,500,000 (Direct Cost: ¥1,500,000)
Keywordsゲルマニウム / FET / 移動度 / 水素アニール / 酸素不純物 / GeOI / n-MOSFET
Outline of Annual Research Achievements

ここ数年間でGe FETにおける電子移動度の散乱機構に関する研究をすすめ,本研究において,次の三点について極めて大きな展開があった。
1)従来GeO2がGe上絶縁膜としてベスト材料と報告されてきたが,熱力学的にはGeO2は不安定材料である。そこで酸化物の安定性という観点から,酸化物の生成エネルギーとGeとの反応性という観点から考えたところ,もっとも安定なゲートスタック形成のための絶縁膜としてY2O3,特にGeO2中へのY2O3の導入が極めて安定な界面を実現することがわかった。
2)n-チャネルGe FETにおいては電子濃度が高くなると移動度が急激に劣化することがわかってきた。電子濃度が高い領域における散乱機構は界面での凹凸散乱が主に効いていると理論的に報告されている。そこで徹底的にGe表面の原子レベル平坦化を狙い,100%水素ガス中で熱処理をした結果,サブミクロン領域にわたって原子レベル平坦性が確認された。その基板上にFETを作製し移動度を評価したところ,高電子濃度領域における移動度が大幅に向上した。
3)同一プロセスを用いてもGe基板の種類によって移動度が異なることが見つけられた。その起源を明らかにすべく基板の詳細を調べた。MIS構造におけるC-V特性には違いがない。つまり界面の差ではなく基板中の散乱機構の違いである。基板を水素アニールすることによって移動度が低い方の基板の移動度が向上することも明らかになった。さらに水素アニール条件の違いによる基板の変化をSIMSで観測したところ,基板中の酸素濃度が大きく異なることがわかった。そこでチャネル領域における酸素濃度を下げることがきわめて重要であると結論することができる。
上記の様に,散乱機構という観点からきわめて決定的に重要な結果が得られたと言える。

Research Progress Status

26年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

26年度が最終年度であるため、記入しない。

Report

(2 results)
  • 2014 Annual Research Report
  • 2013 Annual Research Report
  • Research Products

    (38 results)

All 2015 2014 2013 Other

All Journal Article (6 results) (of which Peer Reviewed: 6 results) Presentation (30 results) (of which Invited: 2 results) Remarks (2 results)

  • [Journal Article] "Reliability assessment of germanium gate stacks with promising initial characteristics. "2015

    • Author(s)
      Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi
    • Journal Title

      Applied Physics Express

      Volume: 8 Issue: 2 Pages: 021301-021301

    • DOI

      10.7567/apex.8.021301

    • NAID

      210000137374

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] "Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium."2014

    • Author(s)
      Cimang Lu, Choong Hyun Lee, Wenfeng Zhang, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi
    • Journal Title

      Journal of Applied Physics

      Volume: 116 Issue: 17

    • DOI

      10.1063/1.4901205

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] "Significant enhancement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat Ge/GeO2 Interface."2014

    • Author(s)
      C. H. Lee, T. Nishimura, C. Lu, W. Zhang, K. Nagashio, and A. Toriumi
    • Journal Title

      ECS Transactions

      Volume: 61(3) Issue: 3 Pages: 147-156

    • DOI

      10.1149/06103.0147ecst

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] "Atomically flat planarization of Ge(100), (110), and (111) surfaces in H2 annealing. "2014

    • Author(s)
      Tomonori Nishimura, Shoichi Kabuyanagi, Wenfeng Zhang, Choong Hyun Lee, Takeaki Yajima, Kosuke Nagashio, and Akira Toriumi
    • Journal Title

      Applied Physics Express

      Volume: 7 Issue: 5 Pages: 051301-051301

    • DOI

      10.7567/apex.7.051301

    • NAID

      210000137073

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack2014

    • Author(s)
      C. Lu, C. H. Lee, W. Zhang, T. Nishimura, K. Nagashio, and A. Toriumi
    • Journal Title

      Applied Physics Letters

      Volume: 104 Issue: 9 Pages: 92909-92909

    • DOI

      10.1063/1.4868032

    • Related Report
      2014 Annual Research Report 2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors2013

    • Author(s)
      C. H. Lee, T. Nishimura, T. Tabata, D. D. Zhao, K. Nagashio, and A. Toriumi
    • Journal Title

      Applied Physics Letters

      Volume: 102 Issue: 23

    • DOI

      10.1063/1.4810002

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Presentation] 「Reliability-aware Germanium Gate Stack Formation by GeO2 Network Modification」2015

    • Author(s)
      Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi
    • Organizer
      2015 第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県・平塚市)
    • Year and Date
      2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] 「Design of High-k and Interfacial Layer on Germanium for 0.5nm EOT」2015

    • Author(s)
      Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi
    • Organizer
      2015 第62回応用物理学会春季学術講演会
    • Place of Presentation
      東海大学湘南キャンパス(神奈川県・平塚市)
    • Year and Date
      2015-03-14
    • Related Report
      2014 Annual Research Report
  • [Presentation] 「Critical Roles of Doped-Metal Cation in GeO2 for Gate Stack Formation on Ge」2015

    • Author(s)
      Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Akira Toriumi
    • Organizer
      第20回ゲートスタック研究会
    • Place of Presentation
      東レ研修センター(静岡県・三島市)
    • Year and Date
      2015-01-31
    • Related Report
      2014 Annual Research Report
  • [Presentation] "Impact of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage and Electron Mobility in Ge n-MOSFETs. "2015

    • Author(s)
      C. H. Lee, T. Nishimura, C. Lu, S. Kabuyanagi, and A. Toriumi
    • Organizer
      8th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar
    • Place of Presentation
      Tohoku University (Sendai, Miyagi)
    • Year and Date
      2015-01-29
    • Related Report
      2014 Annual Research Report
  • [Presentation] "Dramatic Effects of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage as well as Electron Mobility in n-channel Ge MOSFETs. "2014

    • Author(s)
      C. H. Lee, T. Nishimura, C. Lu, S. Kabuyanagi and A. Toriumi
    • Organizer
      IEDM 2014
    • Place of Presentation
      San Francisco (USA)
    • Year and Date
      2014-12-17
    • Related Report
      2014 Annual Research Report
  • [Presentation] "Interface Friendly High-k Dielectrics for Sub-nm EOT Gate Stacks Formation on Germanium. "2014

    • Author(s)
      C. Lu, C. H. Lee, T. Nishimura, and A. Toriumi
    • Organizer
      2014 IEEE 45th SISC
    • Place of Presentation
      San Diego (USA)
    • Year and Date
      2014-12-13
    • Related Report
      2014 Annual Research Report
  • [Presentation] "Merits and demerits of H2-annealing in GeO2/Ge gate stacks. "2014

    • Author(s)
      T. Nishimura, S. Kabuyanagi, C. H. Lee, T. Yajima, K. Nagashio, and A. Toriumi
    • Organizer
      JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
    • Place of Presentation
      Leuven (Belgium)
    • Year and Date
      2014-11-13
    • Related Report
      2014 Annual Research Report
  • [Presentation] "Impact of YScO3 on Ge Gate Stack in Terms of EOT Reduction as Well as Interface. "2014

    • Author(s)
      C. Lu, C.H. Lee, T. Nishimura1,2, K. Nagashio and A. Toriumi
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM 2014)
    • Place of Presentation
      Tsukuba International Congress Center(Tsukuba, Ibaraki)
    • Year and Date
      2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] "Origin of Self-limiting Oxidation of Ge in High-Pressure O2 at Low Temperature. "2014

    • Author(s)
      C.H. Lee, T. Nishimura1,2, K. Nagashio and A. Toriumi
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM 2014)
    • Place of Presentation
      Tsukuba International Congress Center(Tsukuba, Ibaraki)
    • Year and Date
      2014-09-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] " Thermally Robust CMOS-aware Ge MOSFETs with High Mobility at High-carrier Densities on a Single Orientation Ge Substrate"2014

    • Author(s)
      C. H. Lee, C. Lu, T. Nishimura, K. Nagashio, and A. Toriumi
    • Organizer
      Symposium on VLSI Technology (VLSI)
    • Place of Presentation
      Honolulu (USA)
    • Year and Date
      2014-06-11
    • Related Report
      2014 Annual Research Report
  • [Presentation] " Significant enhancement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat Ge/GeO2 Interface"2014

    • Author(s)
      C. H. Lee, T. Nishimura, C. Lu, W. Zhang, K. Nagashio, and A. Toriumi
    • Organizer
      The 225th Electrochemical Society Meeting (ECS)
    • Place of Presentation
      Orlando (USA)
    • Year and Date
      2014-05-13
    • Related Report
      2014 Annual Research Report
    • Invited
  • [Presentation] Network modification of GeO2 by trivalent metal oxide doping2014

    • Author(s)
      C. Lu, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi
    • Organizer
      2014年 第74回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(相模原)
    • Year and Date
      2014-03-20
    • Related Report
      2013 Annual Research Report
  • [Presentation] Thermodynamic selection of the desirable doping materials in GeO22014

    • Author(s)
      C. Lu, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi
    • Organizer
      2014年 第74回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(相模原)
    • Year and Date
      2014-03-20
    • Related Report
      2013 Annual Research Report
  • [Presentation] Improvement of High-Ns Electron Mobility in Ge n-MOSFETs with Atomically Flat GeO2/Ge Interface2014

    • Author(s)
      李忠賢, 西村知紀, 魯辞莽, 張文峰, 長汐晃輔, 鳥海明
    • Organizer
      2014年 第74回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(相模原)
    • Year and Date
      2014-03-20
    • Related Report
      2013 Annual Research Report
  • [Presentation] Record-high Electron Mobility in Sub-nm EOT Ge n-MOSFETs with Y-dooed GeO2 Interfacial Layer2014

    • Author(s)
      李忠賢, 魯辞莽, 張文峰, 西村知紀, 長汐晃輔, 鳥海明
    • Organizer
      2014年 第74回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(相模原)
    • Year and Date
      2014-03-20
    • Related Report
      2013 Annual Research Report
  • [Presentation] Surface Cleaning of (100) n-Ge by H2O2 Aqueous Solution2014

    • Author(s)
      W. F. Zhang, C. M. Lu, C. H. Lee, T. Nishimura, K. Nagashio, and A. Toriumi
    • Organizer
      2014年 第74回応用物理学会春季学術講演会
    • Place of Presentation
      青山学院大学相模原キャンパス(相模原)
    • Year and Date
      2014-03-19
    • Related Report
      2013 Annual Research Report
  • [Presentation] Enhancement of High-Ns Electron Mobility in Ge (111) n-MOSFETs by the Formation of Atomically Flat GeO2/Ge Interface2014

    • Author(s)
      C. H. Lee, T. Nishimura, C. Lu, W. F. Zhang, K. Nagashio, and A. Toriumi
    • Organizer
      7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      東北大学、宮城県
    • Year and Date
      2014-01-27
    • Related Report
      2013 Annual Research Report
  • [Presentation] Selection of desirable trivalent metal oxides as doping material into GeO22014

    • Author(s)
      C. Lu, C. H. Lee, W. Zhang, T. Nishimura, K. Nagashio and A. Toriumi
    • Organizer
      7th International Workshop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
    • Place of Presentation
      東北大学、宮城県
    • Year and Date
      2014-01-27
    • Related Report
      2013 Annual Research Report
  • [Presentation] Atomically Flat Germanium (111) Surface by Hydrogen Annealing2013

    • Author(s)
      T. Nishimura, S. Kabuyanagi C. H. Lee, T. Yajima, K. Nagashio, and A. Toriumi
    • Organizer
      224th ECS Meeting
    • Place of Presentation
      サンフランシスコ、USA
    • Year and Date
      2013-10-29
    • Related Report
      2013 Annual Research Report
  • [Presentation] Effects of the Interface-related and Bulk-fixed Charges in Ge/GeO2 Stack on Band Bending of Ge Studied by X-ray Photoemission Spectroscopy2013

    • Author(s)
      W. F. Zhang, C. H. Lee, C. M. Lu, T. Nishimura, K. Nagashio, K. Kita and A. Toriumi
    • Organizer
      2013 International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      ヒルトン福岡シーホーク(福岡)
    • Year and Date
      2013-09-26
    • Related Report
      2013 Annual Research Report
  • [Presentation] Layer-by-Layer GeO2 Formation in the Self-Limited Oxidation Regime of Ge2013

    • Author(s)
      C. H. Lee, T. Nishimura, T. Tabata, K. Nagashio, and A. Toriumi
    • Organizer
      2013 International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      ヒルトン福岡シーホーク(福岡)
    • Year and Date
      2013-09-26
    • Related Report
      2013 Annual Research Report
  • [Presentation] Thermodynamic consideration and experimental demonstration for solving the problems of GeO2 solubility in H2O and GeO desorption from GeO2/Ge2013

    • Author(s)
      C. Lu, C. H. Lee, W. F. Zhang, T. Nishimura, K. Nagashio, and A. Toriumi
    • Organizer
      2013 International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      ヒルトン福岡シーホーク(福岡)
    • Year and Date
      2013-09-26
    • Related Report
      2013 Annual Research Report
  • [Presentation] Oxygen Potential Lowering in N-doped GeO2 for Ge MIS Gate Stack Desian in Extremely Thin EOT Region2013

    • Author(s)
      田畑俊行, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス(京都))
    • Year and Date
      2013-09-17
    • Related Report
      2013 Annual Research Report
  • [Presentation] Y ドープGeO2 界面層のY 濃度に依存した界面酸化膜形成2013

    • Author(s)
      Lu Cimang, 李忠賢, 西村知紀, 長汐晃輔, 鳥海明
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス(京都))
    • Year and Date
      2013-09-17
    • Related Report
      2013 Annual Research Report
  • [Presentation] Significant Enhancement of High-Ns electron mobility in Ge n-MOSFETs2013

    • Author(s)
      李忠賢, 魯辞莽, 田畑俊行, 西村知紀, 長汐晃輔, 鳥海明
    • Organizer
      第74回応用物理学会秋季学術講演会
    • Place of Presentation
      同志社大学京田辺キャンパス(京都))
    • Year and Date
      2013-09-17
    • Related Report
      2013 Annual Research Report
  • [Presentation] Effect of Oxygen Potential Lowering in N-doped GeO2 on Suppression of GeO Desorption and Planarization of Ge Interface2013

    • Author(s)
      T. Tabata, C. H. Lee, T. Nishimura, K. Nagashio and A. Toriumi
    • Organizer
      2013 International Conference on Solid State Devices and Materials (SSDM)
    • Place of Presentation
      ヒルトン福岡シーホーク(福岡)
    • Year and Date
      2013-09-06
    • Related Report
      2013 Annual Research Report
  • [Presentation] Enhancement of High-Ns Electron Mobility in Sub-nm EOT Ge n-MOSFETs2013

    • Author(s)
      C. H. Lee, C. Lu, T. Tabata, T. Nishimura, K. Nagashio, and A. Toriumi
    • Organizer
      2013 Silicon Nanoelectronics Workshop
    • Place of Presentation
      リーガロイヤルホテル京都(京都
    • Year and Date
      2013-06-11
    • Related Report
      2013 Annual Research Report
  • [Presentation] Ultra-thin GeO2 Formation by Oxygen Radicals (0*) for Advanced Ge Gate Stacks - Reaction kinetics, film quality and MIS characteristics -2013

    • Author(s)
      W. J. Song, W. F. Zhang, C. H. Lee, T. Nishimura, and A. Toriumi
    • Organizer
      2013 Silicon Nanoelectronics Workshop
    • Place of Presentation
      リーガロイヤルホテル京都(京都)
    • Year and Date
      2013-06-09
    • Related Report
      2013 Annual Research Report
  • [Presentation] Ion Implantation-Induced Defects Generated in PN Junction For mation of Germanium2013

    • Author(s)
      C. H. Lee, T. Nishimura, T., Tabata, K. Nagashio, and A. Toriumi
    • Organizer
      ICSI-8 and ISCSI-VI
    • Place of Presentation
      九州大学(福岡)
    • Year and Date
      2013-06-03
    • Related Report
      2013 Annual Research Report
  • [Presentation] High performance Ge n- and p-MOSFETs for advanced CMOS2013

    • Author(s)
      A. Toriumi, C. H. Lee, T. Tabata, and T. Nishimura
    • Organizer
      E-MRS 2013 SPRING MEETING
    • Place of Presentation
      Strasbourg, France
    • Year and Date
      2013-05-27
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Remarks] 鳥海研究室ホームページ

    • URL

      http://www.adam.t.u-tokyo.ac.jp/publication.html

    • Related Report
      2014 Annual Research Report
  • [Remarks]

    • URL

      http://www.adam.t.u-tokyo.ac.jp/publication.html

    • Related Report
      2013 Annual Research Report

URL: 

Published: 2014-01-29   Modified: 2024-03-26  

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