有機金属気相成長高密度量子ナノ構造による単電子集積エレクトロニクス

• Project/Area Number: 13GS0001
• Research Category: Grant-in-Aid for Creative Scientific Research
• Allocation Type: Single-year Grants
• Research Institution: Hokkaido University
• Principal Investigator: 福井 孝志 北海道大学, 大学院情報科学研究科, 教授 (30240641)
• Co-Investigator(Kenkyū-buntansha): 長谷川 英機 北海道大学, 名誉教授 (60001781) ; 雨宮 好仁 北海道大学, 大学院情報科学研究科, 教授 (80250489) ; 本久 順一 北海道大学, 量子集積エレクトロニクス研究センター, 助教授 (60212263) ; 橋詰 保 北海道大学, 量子集積エレクトロニクス研究センター, 教授 (80149898) ; 葛西 誠也 北海道大学, 大学院情報科学研究科, 助教授 (30312383)
• Project Period (FY): 2001 – 2005
• Project Status: Completed (Fiscal Year 2005)
• Budget Amount: ¥377,000,000 (Direct Cost: ¥317,000,000、Indirect Cost: ¥60,000,000); Fiscal Year 2005: ¥68,900,000 (Direct Cost: ¥53,000,000、Indirect Cost: ¥15,900,000); Fiscal Year 2004: ¥80,600,000 (Direct Cost: ¥62,000,000、Indirect Cost: ¥18,600,000); Fiscal Year 2003: ¥110,500,000 (Direct Cost: ¥85,000,000、Indirect Cost: ¥25,500,000); Fiscal Year 2002: ¥117,000,000 (Direct Cost: ¥117,000,000)
• Keywords: 有機金属気相成長 / 選択成長 / 量子ナノ構造 / 単電子トランジスタ / 2分岐決定ダイアグラム / カゴメ格子 / フォトニック結晶 / 相補型単電子インバータ / 単電子メモリー / 近藤効果

Research Abstract

平成17年度は、有機金属気相成長(MOVPE)選択成長法による量子ナノ構造を利用した単電子素子・単電子回路の実現と、高密度量子ナノ構造の周期配列の形成技術の確立を目的として、以下の研究を行った。
1.前年度に続き、単電子トランジスタの論理回路応用を目的に集積化を進めた。2分決定グラフ論理による1ビット加算器に関して、論文公表することが出来た。また、選択成長により作製したリッジ型量子細線と、自己形成InAs量子ドットを組み合わせた、フローティングゲート型の単電子メモリーの試作とその動作特性解析を進めた。試作した素子を温度20Kで評価した結果、ドレイン電流に、ゲート電圧に対する明瞭な時計回りのヒステリシスが観測された。印加するゲート電圧の最大値を変化させる実験、あるいはヒステリシスの幅やしきい値のシフト量およびその温度依存性、さらにゲート電圧を変化させた後の時間応答などの実験結果により、このヒステリシスが、ゲート側から注入された電子が量子ドットに保持されることに起因することが示された。
2.単電子素子の高温動作化を目的として、選択成長を用い、新しい種類のナノ構造の作製を試みた。具体的には、円形あるいは6角形のマスク開口部を有するGaAs(111)B基板に対して選択成長を行うことにより、直径50nm、長さは9μmにもおよぶ、GaAsナノワイヤ構造の作製に成功した。そして、このナノワイヤを単電子素子へと応用するプロセス手法を考案した。同様な構造はInP(111)A基板上にも作製した。まずInPナノワイヤ、横方向成長を利用したInP/InAsコアシェル構造、さらにInP/InAs/InP横方向ヘテロ構造からなるInAs量子リングを作製し、その光学的特性から、量子閉じ込め構造を確認した。

Research Products

• [Journal Article] Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays (2005)
  • Author(s): Mohan P
  • Journal Title: NANOTECHNOLOGY 16・12 Pages: 2903-2907
• [Journal Article] Selective-area MOVPE fabrication of GaAs hexagonal air-hole arrays on GaAs(111)B substrates using flow-rate modulation (2005)
  • Author(s): Takeda J
  • Journal Title: NANOTECHNOLOGY 16・12 Pages: 2954-2957
• [Journal Article] Fabrication of one-dimensional GaAs channel-coupled InAs quantum dot memory device by selective-area metal-organic vapor phase epitaxy (2005)
  • Author(s): Nataraj D
  • Journal Title: APPLIED PHYSICS LETTERS 87・19 Pages: 193103-193103
• [Journal Article] Fabrication and cfraracterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy (2005)
  • Author(s): Noborisaka J
  • Journal Title: APPLIED PHYSICS LETTERS 87・19 Pages: 93109-93109
• [Journal Article] A 1 bit binary-decision-diagram adder circuit using single-electron transistors made by selective-area metalorganic vapor-phase epitaxy (2005)
  • Author(s): Miyoshi Y
  • Journal Title: APPLIED PHYSICS LETTERS 87・3 Pages: 33501-33501
• [Journal Article] Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy (2005)
  • Author(s): Noborisaka J
  • Journal Title: APPLIED PHYSICS LETTERS 86・21 Pages: 213102-213102
• [Journal Article] MOVPE selectively grown GaAs nano-wires with self-aligned W side gate (2004)
  • Author(s): N.Ooike
  • Journal Title: Journal of Crystal Growth 272・1-4 Pages: 175-179
• [Journal Article] Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE (2004)
  • Author(s): N.Ooike
  • Journal Title: Thin Solid Films 464-465・10 Pages: 220-224
• [Journal Article] Growth of GaAs/AlGaAs hexagonal pillars on GaAs (111)B surfaces by selective-area MOVPE (2004)
  • Author(s): J.Motohisa
  • Journal Title: Physica E 3-4・23 Pages: 298-304
  • NAID: 120000958778
• [Journal Article] Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates (2004)
  • Author(s): J.Motohisa
  • Journal Title: Journal of Crystal Growth 1-4・272 Pages: 180-185
  • NAID: 120000954504
• [Journal Article] Fabrication and characterization of GaAs two-dimensional air-hole arrays on GaAs (111)A substrates using selective-area MOVPE (2004)
  • Author(s): Junichiro Takeda
  • Journal Title: Journal of Crystal Growth 1-4・272 Pages: 570-575
• [Journal Article] Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy (2004)
  • Author(s): Premila Mohan
  • Journal Title: Applied Physics Letters 84・14 Pages: 2664-2666
• [Publications] Premila Mohan: "Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy"Applied Physics Letters. 83・4. 689-691 (2003)
• [Publications] Masashi Akabori: "InGaAs nano-pillar array formation on partially masked InP (111)B by selective area metalorganic vapour phase epitaxial growth for two-dimensional photonic crystal application"Nanotechnology. 14・10. 1071-1074 (2003)
• [Publications] Fumito Nakajima: "Single-electron AND/NAND logic circuits based on a self-organized dot network"Applied Physics Letters. 83・13. 2680-2682 (2003)
• [Publications] Hiroyuki Takahashi: "Formation and characteristics of 100-nm scale GaAs quantum wires by selective area MOVPE"Applied Surface Science. 216・1-4. 402-406 (2003)
• [Publications] Hyo Jin Kim: "Formation of GaAs wire structures and position controlled In_<0.8>Ga_<0.2>As quantum dots on SiO_2-patterned vicinal (001) GaAs substrate"Nanotechnology. 15. 292-296 (2004)
• [Publications] Masaru Inari: "Selective area MOVPE growth of InP and InGaAs pillar structures for InP based two-dimensional photonic crystals"Physica E. (to be published). (2004)
• [Publications] Junichi Motohisa: "Growth of GaAs/AlGaAs hexiagonal pillars on GaAs (111)B surfaces by selective-area MOVPE"Physica E. (to be published). (2004)
• [Publications] Junichi Motohisa: "Growth and optical properties of 2D photonic crystals based on hexiagonal GaAs/AlGaAs pillar arrays by selective-area metalorganic vapor phase epitaxy"Proc.2003 MRS Fall Meetings. (to be published). (2004)
• [Publications] Premila Mohan: "Realization of InAs-based two-dimensional artificial lattice by selective area metalorganic vapor phase epitaxy"Applied Physics Letters. (to be published). (2004)
• [Publications] Toyonori Kusuhara: "Formation of InAs dots on AlGaAs ridge wire structures by selective area MOVPE growth"Jpn. J. Appl. Phys.. 41・4B. 2508-2512 (2002)
• [Publications] Junichi Motohisa: "Fabrication and low-temperature transport properties of selectively grown dual-gated single-electron transistors"Applied Physics Letters. 80・15. 2797-2799 (2002)
• [Publications] Takaaki Ishihara: "Dependence on In content of In_xGa_<1-x>As quantum dots grown along GaAs multiatomic steps by MOVPE"J. Crystal Growth. 237. 1476-1480 (2002)
• [Publications] Junichi Motohisa: "Formation of nanoscale heterointerfaces by selective area metalorganic vapor-phase epitaxy and their applications"Applied Surface Science. 109・1-4. 184-190 (2002)
• [Publications] Junichiro Takeda: "Formation of Al_xGa_<1-x>As periodic array of micro hexagonal pillars and air holes by selective area MOVPE"Applied Surface Science. 109・1-4. 236-241 (2002)
• [Publications] Osamu Matsuda: "Wavelength selective photoexcitation of picosecond acoustic-phonon pulses in a triple GaAs/Al_<0.3>Ga_<0.7>As quantum well structure"Physica B. 316. 205-208 (2002)
• [Publications] T.Oya: "A majority-logic nanodevice using a balanced pair of single-electron boxes"J. Nanosci. Nanotechnol.. 2・3-4. 333-342 (2002)
• [Publications] Hiroyuki Takahashi: "Formation of 100nm-scale GaAs quantum wires and size-controlled InAs quantum dots by selective are MOVPE for single electron memory application"Proceedings of 7th International Conference on Nanometer-scale Science and Technology, 21st European Conference on Surface Science. THP-063-THP-064 (2002)
• [Publications] H.J.Kim: "Fabrication of single-or double-row aligned self-assembled quantum dots by utilizing SiO_2-patterned vicinal (001)GaAs substrates"Applied Physics Letters. 81・27. 5147-5149 (2002)
• [Publications] T.Oya: "A majority-logic device using an irreversible single-electron box"IEEE Transactions on Nanotechnology. 2・1(to be published). (2003)
• [Publications] Junichi Motohisa: "Two-stage Kondo effect in a lateral quantum dot at high magnetic field"the Proceedings of 26th International Conference on the Physics of Semiconductors. (to be published). (2003)
• [Publications] Hiroyuki Takahashi: "Formation and characteristics of 100nm-scale GaAs quantum wires by selective area MOVPE"Applied Surface Science. (to be published). (2003)
• [Publications] Fumito Nakajima: "GaAs dot-wire coupled structures grown by selective area metalorganic vapor phase epitaxy and their application to single electron devices"J.Appl.Phys.. 90. 2606-2611 (2001)
• [Publications] Junichiro Takeda: "Formation of Al_xGa_<1-x>As periodic array of micro-hexagonal pillars and air holes by selective area MOVPE"Appl.Surf.Sci.. (to be piblished). (2002)
• [Publications] Junichi Motohisa: "Formation of Nano-Scale Heterointerfaces by Selective Area Metalorganic Vapor Phase Epitaxy and Their Applications"Appl.Surf.Sci.. (to be piblished). (2002)
• [Publications] Fumito Nakajima: "Two-way current switch using Coulomb blockade in GaAs quantum dots by selective area metalorganic vapor phase epitaxy"Physica E. (to be piblished). (2002)
• [Publications] Junichi Motohisa: "Low temperature traiisport in dual-gated SETs fabricated by selective area metalorganic vapor phase epitaxy"Physaca E. (to be piblished). (2002)
• [Publications] Masashi Akabori: "Selective area MOVPE growth of two-dimensional photonic crystals having an air-hole array and its application to air-bridge-type structures"Physica E. (to be piblished). (2002)
• [Publications] Takaaki Ishihara: "Dependence on In content of InxGal-xAs quantum dots grown along GaAs multiatomic steps by MOVPE"J.Cryst.Growth. (to be piblished). (2002)
• [Publications] W.G.van der Wiel: "Two-stage Kondo effect in a quantum dot at high magnetic field"Phys.Rev.Lett.. (to be piblished). (2002)
• [Publications] Junichi Motohisa: "Fabrication and Low-Temperature Transport Properties of Selectively Grown Dual-Gated Single-Electron Transistors"Phys.Rev.Lett.. (to be piblished). (2002)
• [Publications] Toyonori Kusuhara: "Formation of InkAs Dots on AlGaAs Ridge Wire Structures by Slective Area MOVPE Growth"Jpn.J.Appl.Phys.. (to be piblished). (2002)