• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to previous page

広い可視光領域をカバーする光デバイス用材料の開拓

Research Project

Project/Area Number 14041213
Research Category

Grant-in-Aid for Scientific Research on Priority Areas

Allocation TypeSingle-year Grants
Review Section Science and Engineering
Research InstitutionSophia University

Principal Investigator

岸野 克巳  上智大学, 理工学部, 教授 (90134824)

Co-Investigator(Kenkyū-buntansha) 野村 一郎  上智大学, 理工学部, 助手 (00266074)
Project Period (FY) 2002 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥7,200,000 (Direct Cost: ¥7,200,000)
Fiscal Year 2003: ¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 2002: ¥3,700,000 (Direct Cost: ¥3,700,000)
Keywords可視光 / 光デバイス / II-VI族半導体 / InP基板 / ZnTe基板 / 分子線エピタキシー / 発光ダイオード / 寿命特性 / 可視光デバイス / 半導体レーザ / 超格子 / MgZnCdSe / BeZnTe
Research Abstract

本研究では、広い可視光領域をカバーする光デバイス材料の開拓を目指してInP基板上MgZnCdSe/BeZnTe及びZnTe基板上ZnCdSeTe/MgZnSeTeII-VI族半導体に着目し、材料開発及び発光デバイスへの応用を検討した。
1.黄〜緑色域の発光材料としてInP基板に格子整合するBeZnSeTe四元混晶を新たに提案し、分子線エピタキシー(MBE)法を用いて材料開拓を行った。Be組成を0.11から0.29に変えることで15Kにおけるフォトルミネッセンス(PL)測定より、ピーク波長が506から471nmの単峰性の良好な発光が得られた。また、BeZnSeTeの反射率測定から屈折率を見積もったところ、先に開発したMgZnCdSe材料よりも高い屈折率を有することが示された。これよりBeZnSeTeを半導体レーザの活性層に用いることで光閉じ込めにも効果的であることが分かった。
2.活性層にBeZnSeTe、nクラッド層にMgSe/ZnCdSe超格子、pクラッド層にMgSe/BeZnTe超格子を用いた発光ダイオード(LED)を試作した。活性層の組成を変えることで、室温においてピーク波長が594、575、542nmの燈色から黄緑色の良好な単峰性発光が観測された。575nm帯黄色LEDを室温において比較的高い直流電流(130A/cm^2)で連続動作を行ったところ2500時間以上、殆ど劣化のない長寿命特性が得られた。これより、従来のII-VI族デバイスにおける最大の問題である寿命特性を改善し、信頼性の高いII-VI族可視光デバイス実現の可能性が示唆された。
3.ZnTe基板上のZnCdSeTe及びMgZnSeTeII-VI族材料を作製し、禁制帯幅や屈折率等の特性を評価した。活性層にZnCdTe、クラッド層にMgZnSeTeを用いたLEDを試作し、室温においてピーク波長583nmの黄色発光を得た。

Report

(2 results)
  • 2003 Annual Research Report
  • 2002 Annual Research Report
  • Research Products

    (28 results)

All Other

All Publications (28 results)

  • [Publications] Ichirou Nomura: "Refractive index measurements of BeZnTe and related superlattices on InP and application for waveguide analysis of MgZnCdSe/BeZnTe visible lasers"physica status solidi (b). Vol.229,No.2. 987-990 (2002)

    • Related Report
      2003 Annual Research Report
  • [Publications] Song-Bek Che: "Visible light emitting diode with ZnCdSe/BeZnTe superlattices as an active layer and MgSe/BeZnTe superlattices as a p-cladding layer"physica status solidi (b). Vol.229,No.2. 1001-1004 (2002)

    • Related Report
      2003 Annual Research Report
  • [Publications] Kazuhiro Fukada: "Reduction of defect density of ZnCdTe on InP substrates by introducing BeZnTe buffer layers"physica status solidi (b). Vol.229,No.1. 107-110 (2002)

    • Related Report
      2003 Annual Research Report
  • [Publications] Katsumi Kishino: "ZnCdTe/ZnTe light emitting diodes with CdSe n-type contact layers grown on ZnTe substrates by molecular beam epitaxy"physica status solidi (b). Vol.229,No.2. 991-994 (2002)

    • Related Report
      2003 Annual Research Report
  • [Publications] Song-Bek Che: "MgZnCdSe/BeZnTe visible light-emitting diode with longer lifetime over 1000h"physica status solidi (a). Vol.192,No.1. 201-205 (2002)

    • Related Report
      2003 Annual Research Report
  • [Publications] Yasutomo Ochiai: "ZnCdTe/ZnTe light emitting diodes with MgSeTe/ZnTe super-lattice layers gown on ZnTe substrates by molecular beam epitaxy"physica status solidi (a). Vol.192,No.1. 206-211 (2002)

    • Related Report
      2003 Annual Research Report
  • [Publications] Katsumi Kishino: "II-VI semiconductors on InP for green-yellow emitters (Invited)"Journal of Selected Topics in Quantum Electron. Val.8,No.4. 773-786 (2002)

    • Related Report
      2003 Annual Research Report
  • [Publications] Song-Bek Che: "Yellow-green ZnCdSe/BeZnTe II-VI laser diodes grown on InP substrates"Applied Physics Letters. Vol.81,No.6. 972-974 (2002)

    • Related Report
      2003 Annual Research Report
  • [Publications] Ichirou Nomura: "Characterization of ZnCdSeTe/MgZnSeTe materials for ZnTe-based visible optical devices"physica status solidi (b). Vol.241,No.3. 483-486 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Yasushi Takashima: "Proposal of a novel BeZnSeTe quaternary for II-VI middle range visible light emitting devices on InP substrates"physica status solidi (b). Vol.241,No.3. 747-750 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Song-Bek Che: "Development of yellow-green LEDs and LDs using MgZnCdSe-BeZnTe superlattices on InP substrates by MBE (Invited)"physica status solidi (b). Vol.241,No.3. 739-746 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Katsumi Kishino: "Yellow-green emitters based on beryllium-chalcogenides on InP substrates (Invited)"physica status solidi (c). (to be published). (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Song-Bek Che: "Growth and characterization of ZnCdSe/BeZnTe II-VI compound type-II superlattices on InP substrates and their application for visible light emitting devices"Japanese Journal of Applied Physics. Vol.40,No.12. 6747-6752 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Song-Bek Che: "Novel ZnCdSe/BeZnTe type-II superlattice structure grown on InP substrates by MBE"Journal of Korean Physical Society. Vol.39. S18-S22 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Kazuhiro Fukada: "Reduction of defect density of ZnCdSe on InP substrates by introducing BeZnTe buffer layers"physica status solidi (b). Vol.229,No.1. 107-110 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Ichirou Nomura: "Refractive index measurements of BeZnTe and related superlattices on InP and application for waveguide analysis of MgZnCdSe/BeZnTe visible lasers"physica status solidi (b). Vol.229,No.2. 987-990 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Song-Bek Che: "Visible light emitting diode with ZnCdSe/BeZnTe superlattices as an active layer and MgSe/BeZnTe superlattices as a p-cladding layer"physica status solidi (b). Vol.229,No.2. 1001-1004 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Katsumi Kishino: "ZnCdTe/ZnTe light emitting diodes with CdSe n-type contact layers grown on_ZnTe_substrates by molecular beam epitaxy"physica status solidi (b). Vol.229,No.2. 991-994 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Katsumi Kishino: "Improved molecular beam epitaxy for fabricating AlGaN/GaN heterojunction devices"physica status solidi (a). Vol.190,No.1. 23-31 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Katsumi Kishino: "Intersubband absorption at λ〜1.2-1.6μm in GaN/AlN multiple quantum wells grown by rf-plasma molecular beam epitaxy"physica status solidi (a). Vol.192,No.1. 124-128 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Song-Bek Che: "MgZnCdSe/BeZnTe visible light-emitting diode with longer lifetime over 1000h"physica status solidi (a). Vol.192,No.1. 201-205 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Yasutomo Ochiai: "ZnCdTe/ZnTe light emitting diodes with MgSeTe/ZnTe super-lattice layers grown on ZnTe substrates by molecular beam epitaxy"physica status solidi (a). Vol.192,No.1. 206-211 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Katsumi Kishino: "II-VI semiconductors on InP for green-yellow emitters (Invited)"Journal of Selected Topics in Quantum Electronics. Vol.8,No.4. 773-786 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Masao Yonemaru: "Improved responsivity of AlGaN-based resonant cavity-enhanced UV-photodetectors grown on sapphire by RF-MBE"physica status solidi (a). Vol.192,No.2. 292-295 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Song-Bek Che: "Yellow-green ZnCdSe/BeZnTe II-VT laser diodes grown on InP substrates"Applied Physics Letters. Vol.81,No.6. 972-974 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Katsumi Kishino: "λ〜1.1-1.6μm intersubband transition in (GaN)_m/(AlN)_n superlattices grown by rf-plasma molecular beam epitaxy"Applied Physics Letters. Vol.81,No.7. 1234-1236 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Akihiko Kikuchi: "AlN/GaN double resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy"Applied Physics Letters. Vol.81,No.9. 1729-1731 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Kazuhide Kusakabe: "Overgrowth of GaN layer on GaN nano-columns by RF-molecular beam epitaxy"Journal of Crystal Growth. Vol.237,No.2. 988-992 (2002)

    • Related Report
      2002 Annual Research Report

URL: 

Published: 2002-04-01   Modified: 2018-03-28  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi