Spintoronics Devices using Transport Properties
| Project/Area Number |
14076219
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| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
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| Allocation Type | Single-year Grants |
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| Review Section |
Science and Engineering
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
AKINAGA Hiroyuki Nanotechnology Research Institute, Group Leader, ナノテクノロジー研究部門, 研究グループ長 (90221712)
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| Project Period (FY) |
2002 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥19,900,000 (Direct Cost: ¥19,900,000)
Fiscal Year 2005: ¥5,100,000 (Direct Cost: ¥5,100,000)
Fiscal Year 2004: ¥6,800,000 (Direct Cost: ¥6,800,000)
Fiscal Year 2003: ¥5,600,000 (Direct Cost: ¥5,600,000)
Fiscal Year 2002: ¥2,400,000 (Direct Cost: ¥2,400,000)
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| Keywords | Magnetotransport effect / Magnetoresistive switch effect / Semiconductor / Metal / Hybrid Strcuture / Non-linear transport |
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| Research Abstract |
Magnetoresistive switch effect observed in a semiconductor / metal hybrid structure is considered to be an effect in which its non-linear current-voltage characteristics recover to the linearity under the magnetic field. In order to elucidate the origin, from FY2002 to FY2003, we investigated the necessary structural conditions for the magnetoresistive switch effect, and succeeded in observing the effect in a Au gap structure fabricated on a GaAs substrate. In FY2004, we found the electro-luminescence phenomena in the Au gap structure. Furthermore, the space-resolved electro-luminescence measurements showed that the non-linear transport was thought to progress not on the GaAs surface between the Au electrodes, but at the heterointerface between GaAs and Au. This result indicates the advantage in terms of the device application using this effect, because the interface is much stable and easiertrrbe-liandled comparing to the surface. In the last half period of FY2005, we intensively investigated the relationship between the interface and the magnetoresistive switch effect, then finally, we achieved the conclusion that the sample with the structurally disordered heterointerface shows the non-linear transport, but not the magnetic field dependence. Namely, the experimental results proved that the metal / semiconductor interface is the arena where the magnetoresistive switch effect takes place.
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Report
(5 results)
Research Products
(15 results)
