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Atomic level characterization and property control of surface and interface in nitride semiconductor heterostructures

Research Project

Project/Area Number 14102010
Research Category

Grant-in-Aid for Scientific Research (S)

Allocation TypeSingle-year Grants
Research Field 表面界面物性
Research InstitutionTohoku University

Principal Investigator

SAKURAI Toshio  Tohoku University, Institute for Materials Research, Professor, 金属材料研究所, 教授 (20143539)

Co-Investigator(Kenkyū-buntansha) FUJIKAWA Yasunori  Tohoku University, Institute for Materials Research, Associate Professor, 金属材料研究所, 助教授 (70312642)
SADOWSKI J・T  Tohoku University, Institute for Materials Research, Research Associate, 金属材料研究所, 助手 (40333885)
TAKAMURA Yukiko (YAMADA Yukiko)  Tohoku University, Institute for Materials Research, Research Associate, 金属材料研究所, 助手 (90344720)
長尾 忠昭  独立行政法人物質・材料研究機構, ナノマテリアル研究所, 主幹研究員 (40267456)
呉 克揮  東北大学, 金属材料研究所, 中核的研究機関研究員
Project Period (FY) 2002 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥122,720,000 (Direct Cost: ¥94,400,000、Indirect Cost: ¥28,320,000)
Fiscal Year 2005: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2004: ¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2003: ¥27,040,000 (Direct Cost: ¥20,800,000、Indirect Cost: ¥6,240,000)
Fiscal Year 2002: ¥68,770,000 (Direct Cost: ¥52,900,000、Indirect Cost: ¥15,870,000)
Keywordsscanning probe microscopy / wide band gap semiconductor / molecular beam epitaxy / gallium nitride / ultra thin film / III-V族半導体 / 分子線エピタキシー(MBE) / 走査トンネル顕微鏡(STM) / 高速電子線回折(RHEED) / 表面再構成 / 薄膜 / ワイドバンドギャップ / ハロゲンエッチング / III-V族化合物半導体 / MBE / 結晶成長 / STM / 金属コンタクト / GaN / 超高真空 / 原子レベル / AFM
Research Abstract

In this project, atomic-level characterization was carried out in order to understand GaN heteroepitaxy
1. Construction of UHVMBE-SPM
In order to characterize and control III-nitride MBE growth in atomic level, new As-free UHVMBE-STM/AFM, which is capable of atomic-resolution imaging of insulators, was constructed.
2. Growth of GaN on Si(111) and its polarity control
The effect of Ga/N flux ratio on the polarity of GaN directly grown on Si(111) was studied by the STM imaging of Ga-rich reconstructions. We found that the N-rich growth condition at nucleation stage is critical for mono N-polar GaN growth.
3. Formation of metal-GaN contact
Metal-Ga alloyed structures which appear upon depositing metals on GaN(0001) were studied by STM. In the case of Au, c(2x12) was formed, and in the case of Ag, ultrathin film was formed. The ultrathin Ag film was unstable at room temperature, which indicates that the possibility of forming a good ohmic contact is low.
4. Halogen etching of GaN
Etching process of GaN was studied by exposing GaN(0001) to Cl, and observe the surface before and after annealing using STM. In the case of Ga-terminated surface, the etching proceeds bilayer-by-bilayer, and either step-edge etching or terrace etching was observed depending on the annealing temperature.
5. Growth of GaN on Si(111) via ZrB_2 buffer layer
Zirconium diboride is recently attracting attention as a buffer layer for GaN growth on Si. The surface structure of thin ZrB_2 film epitaxially grown on Si(111), and the growth process of GaN on it was studied using STM and AFM. We found that N-polar GaN grows regardless of the growth conditions, and that the origin of mono-polarity is the stableness of GaN(0001)-ZrB_2(0001) interface of N-polar GaN and Zr-terminated ZrB_2.

Report

(5 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • 2002 Annual Research Report
  • Research Products

    (97 results)

All 2006 2005 2004 2003 2002 Other

All Journal Article (86 results) Publications (11 results)

  • [Journal Article] Stability of the quasicubic phase in the initial stage of the growth of bismuth films on Si(111)-7x72006

    • Author(s)
      J.T.Sadowski et al.
    • Journal Title

      Journal of Applied Physics 99

      Pages: 14904-14904

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Stability of the quasicubic phase in the initial stage of the growth of bismuth films on Si(111)-7x72006

    • Author(s)
      J.T.Sadowski et al.
    • Journal Title

      J.Appl.Phys. 99

      Pages: 14904-14904

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Stability of the quasicubic phase in the initial stage of the growth of bismuth films on Si(111)-7x72006

    • Author(s)
      J.T.Sadowski et al.
    • Journal Title

      J.Appl.Phys. 99・1

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Surface and Interface Studies of GaN Epitaxy on Si(111) via ZrB_2 Buffer Layers2005

    • Author(s)
      Yukiko Yamada-Takamura et al.
    • Journal Title

      Physical Review Letters 95

      Pages: 266105-266105

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Atomistic study of GaN surface grown on Si(111)2005

    • Author(s)
      Z.T.Wang et al.
    • Journal Title

      Applied Physics Letters 87

      Pages: 32110-32110

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Role of Surface Electronic Structure in Thin Film Molecular Ordering2005

    • Author(s)
      G.E.Thayer et al.
    • Journal Title

      Physical Review Letters 95

      Pages: 256106-256106

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Hydrogen-Induced Instability of the Ge(105) Surface2005

    • Author(s)
      Yasunori Fujikawa et al.
    • Journal Title

      Physical Review Letters 94

      Pages: 86105-86105

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Thin bismuth film as a template for pentacene growth2005

    • Author(s)
      J.T.Sadowski et al.
    • Journal Title

      Applied Physics Letters 86

      Pages: 73109-73109

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Strong lateral growth and crystallization via two-dimensional allotropic transformation of semi-metal Bi film2005

    • Author(s)
      T.Nagao et al.
    • Journal Title

      Surface Science 590

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Structural transition of pentacene monolayer on Ga bilayer : From brick-wall structure to herringbone pattern of molecular dimers2005

    • Author(s)
      Jun-Zhong Wang et al.
    • Journal Title

      Surface Science 579

      Pages: 80-88

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Dynamics and nano-clustering of alkali metals (Na, K) on the Si(111)-(7x7) surface2005

    • Author(s)
      Kehui Wu et al.
    • Journal Title

      Ultramicroscopy 105

      Pages: 32-41

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Alkali Metal Adsorption on the Si(111)-(7x7) Surface2005

    • Author(s)
      Ke-hui Wu et al.
    • Journal Title

      Chinese Journal of Physics 43

      Pages: 197-211

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Redistribution of alloying elements in quasicrystallized Zr65Al7.5Ni10Cu7.5Ag10 bulk metallic glass2005

    • Author(s)
      M.W.Chen et al.
    • Journal Title

      Physical Review B 71

      Pages: 92202-92202

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Development of a metal-tip cantilever for noncontact atomic force microscopy2005

    • Author(s)
      Kotone Akiyama et al.
    • Journal Title

      Review of Scientific Instruments 76

      Pages: 33705-33705

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Local work function measurement on Cu(111)-Au and Cu(111)-Pd surfaces2005

    • Author(s)
      J.F.Jia et al.
    • Journal Title

      Acta Physica Sinica 54

      Pages: 1523-1527

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] 半導体ヘテロ構造における表面・界面歪み制御2005

    • Author(s)
      藤川安仁 et al.
    • Journal Title

      固体物理 40

      Pages: 615-625

    • NAID

      40006915002

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] 半導体ナノ構造の構成要素としての表面構造-高指数表面の研究を通じて-2005

    • Author(s)
      藤川安仁 et al.
    • Journal Title

      日本物理学会誌 60

      Pages: 641-644

    • NAID

      110002078864

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Ge/Si(105)表面の原子間力顕微鏡観察2005

    • Author(s)
      秋山琴音 et al.
    • Journal Title

      表面科学 26

      Pages: 486-491

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] シリコン表面上の半金属Bi超薄膜の同素変態2005

    • Author(s)
      長尾忠昭 et al.
    • Journal Title

      表面科学 26

      Pages: 344-350

    • NAID

      10016147733

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Surface and Interface Studies of GaN Epitaxy on Si(111) via ZrB_2 Buffer Layers2005

    • Author(s)
      Yukiko Yamada-Takamura et al.
    • Journal Title

      Phys.Rev.Lett. 95

      Pages: 266105-266105

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Atomistic study of GaN surface grown on Si(111)2005

    • Author(s)
      Z.T.Wang et al.
    • Journal Title

      Appl.Phys.Lett. 87

      Pages: 32110-32110

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Role of Surface Electronic Structure in Thin Film Molecular Ordering2005

    • Author(s)
      G.E.Thayer et al.
    • Journal Title

      Phys.Rev.Lett. 95

      Pages: 256106-256106

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Hydrogen-Induced Instability of the Ge(105) Surface2005

    • Author(s)
      Yasunori Fujikawa et al.
    • Journal Title

      Phys.Rev.Lett. 94

      Pages: 86105-86105

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Thin bismuth film as a template for pentacene growth2005

    • Author(s)
      J.T.Sadowski et al.
    • Journal Title

      Appl.Phys.Lett. 86

      Pages: 73109-73109

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Strong lateral growth and crystallization via two-dimensional allotropic transformation of semi-metal Bi film2005

    • Author(s)
      T.Nagao et al.
    • Journal Title

      Surf.Sci. 590

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Structural transition of pentacene monolayer on Ga bilayer : From brick-wall structure to herringbone pattern of molecular dimers2005

    • Author(s)
      Jun-Zhong Wang et al.
    • Journal Title

      Surf.Sci. 579

      Pages: 80-88

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Dynamics and nano-clustering of alkali metals (Na,K) on the Si(111)-(7x7) surface2005

    • Author(s)
      Kehui Wu et al.
    • Journal Title

      Ultramicroscopy 105

      Pages: 32-41

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Alkali Metal Adsorption on the Si(111)-(7x7)Surface2005

    • Author(s)
      Ke-hui Wu et al.
    • Journal Title

      Chinese J.Phys. 43

      Pages: 197-211

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Redistribution of alloying elements in quasicrystallized Zr65Al7.5Ni10Cu7.5Ag10 bulk metallic glass2005

    • Author(s)
      M.W.Chen et al.
    • Journal Title

      Phys.Rev.B 71

      Pages: 92202-92202

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Development of a metal-tip cantilever for noncontact atomic force microscopy2005

    • Author(s)
      Kotone Akiyama et al.
    • Journal Title

      Rev.Sci.Instrum. 76

      Pages: 33705-33705

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Surface and Interface Strain Control of Semiconductor Heterostructure2005

    • Author(s)
      Y.Fujikawa et al.
    • Journal Title

      Kotai Butsuri 40

      Pages: 615-625

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Surface Structure as a Building Block of Semiconductor Nanostructure -Study of High Index Surface-2005

    • Author(s)
      Y.Fujikawa et al.
    • Journal Title

      BUTSURI 60

      Pages: 641-644

    • NAID

      110002078864

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] AFM Observation of Ge/Si(105) Surfaces2005

    • Author(s)
      K.Akiyama et al.
    • Journal Title

      HYOMEN KAGAKU 26

      Pages: 486-491

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Allotropic Transformation of Semimetal Bi Nanofilm on the Si Surface2005

    • Author(s)
      T.Nagao et al.
    • Journal Title

      HYOMEN KAGAKU 26

      Pages: 344-350

    • NAID

      10016147733

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Surface and Interface Studies of GaN Epitaxy on Si(111) via ZrB_2 Buffer Layers2005

    • Author(s)
      Y.Yamada-Takamura et al.
    • Journal Title

      Phys.Rev.Lett. 95・26

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Atomistic study of GaN surface grown on Si(111)2005

    • Author(s)
      Z.T.Wang et al.
    • Journal Title

      Appl.Phys.Lett. 87・3

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Role of Surface Electronic Structure in Thin Film Molecular Ordering2005

    • Author(s)
      G.E.Thayer et al.
    • Journal Title

      Phys.Rev.Lett. 95・25

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Dynamics and nano-clustering of alkali metals (Na, K) on the Si(111)-(7x7) surface2005

    • Author(s)
      K.-H.Wu et al.
    • Journal Title

      Ultramicroscopy 105・1-4

      Pages: 32-41

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Alkali metal adsorption on the Si(111)-7x7 surface2005

    • Author(s)
      K.H.Wu et al.
    • Journal Title

      Chinese Journal of Physics 43

      Pages: 197-211

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Nanofilm Allotrope and Phase Transformation of Ultrathin Bi Film on Si(111)-7x72004

    • Author(s)
      T.Nagao et al.
    • Journal Title

      Physical Review Letters 93

      Pages: 105501-105501

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Imaging of All Dangling Bonds and Their Potential on the Ge/Si(105) Surface by Noncontact Atomic Force Microscopy2004

    • Author(s)
      T.Eguchi et al.
    • Journal Title

      Physical Review Letters 93

      Pages: 266102-266102

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Bilayer-by-bilayer etching of 6H-GaN (0001) with Cl2004

    • Author(s)
      S.Kuwano et al.
    • Journal Title

      Surface Science 561

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Step-by-step cooling of a two-dimensional Na gas on the Si(111)-(7x7) surface2004

    • Author(s)
      Kehui Wu et al.
    • Journal Title

      Physical Review B 70

      Pages: 195417-195417

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth2004

    • Author(s)
      R.Z.Bakhtizin et al.
    • Journal Title

      Physics-Uspekhi 174

      Pages: 384-405

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate2004

    • Author(s)
      G.Sazaki et al.
    • Journal Title

      Journal of Crystal Growth 262

      Pages: 196-201

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Calculation of Noise Intensity in the Frequency Demodulation for Atomic Force Microscopy2004

    • Author(s)
      Yukio Hasegawa et al.
    • Journal Title

      Japanese Journal of Applied Physics 43

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Enhanced oxidation of Ge(111) surface precovered with Na : scanning tunneling microscopy and X-ray photoemission spectroscopy study2004

    • Author(s)
      D.Jeon et al.
    • Journal Title

      Surface Science 559

      Pages: 141-148

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary 2004 Annual Research Report
  • [Journal Article] Nanofilm Allotrope and Phase Transformation of Ultrathin Bi Film on Si(111)-7x72004

    • Author(s)
      T.Nagao et al.
    • Journal Title

      Phys.Rev.Lett. 93

      Pages: 105501-105501

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Imaging of All Dangling Bonds and Their Potential on the Ge/Si(105) Surface by Noncontact Atomic Force Microscopy2004

    • Author(s)
      T.Eguchi et al.
    • Journal Title

      Phys.Rev.Lett. 93

      Pages: 266102-266102

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Bilayer-by-bilayer etching of 6H-GaN (0001) with Cl2004

    • Author(s)
      S.Kuwano et al.
    • Journal Title

      Surf.Sci. 561

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Step-by-step cooling of a two-dimensional Na gas on the Si(111)-(7x7) surface2004

    • Author(s)
      Kehui Wu et al.
    • Journal Title

      Phys.Rev.B 70

      Pages: 195417-195417

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth(in Russian)2004

    • Author(s)
      R.Z.Bakhtizin et al.
    • Journal Title

      Physics-Uspekhi 174

      Pages: 384-405

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Epitaxial relation and island growth of perylene-3.4.9.10-tetracarboxylic dianhydride (PTCDA) thin film crystals on a hydrogen-terminated Si(111) substrate2004

    • Author(s)
      G.Sazaki et al.
    • Journal Title

      J.Cryst.Growth 262

      Pages: 196-201

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Calculation of Noise Intensity in the Frequency Demodulation for Atomic Force Microscopy2004

    • Author(s)
      Yukio Hasegawa et al.
    • Journal Title

      Jpn.J.Appl.Phys. 43

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Enhanced oxidation of Ge(111) surface precovered with Na : scanning tunneling microscopy and X-ray photoemission spectroscopy study2004

    • Author(s)
      D.Jeon et al.
    • Journal Title

      Surf.Sci. 559

      Pages: 141-148

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Bilayer-by-bilayer etching of 6H-GaN(0001) with Cl2004

    • Author(s)
      S.Kuwano et al.
    • Journal Title

      Surface Science 561

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Nanofilm allotrope and phase transformation of ultrathin Bi film on Si(111)-7x72004

    • Author(s)
      T.Nagao et al.
    • Journal Title

      Physical Review Letters 93

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Imaging of all dangling bonds and their potential on the Ge/Si(105) surface by noncontact atomic force microscopy2004

    • Author(s)
      T.Eguchi et al.
    • Journal Title

      Physical Review Letters 93

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Step-by-step cooling of a two-dimensional Na gas on the Si(111)-7x7 surface2004

    • Author(s)
      K.H.Wu et al.
    • Journal Title

      Physical Review B 70

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Layer-by-layer growth of Ag on GaN(0001) surface2003

    • Author(s)
      Kehui Wu et al.
    • Journal Title

      Applied Physics Letters 82

      Pages: 1389-1391

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Na Adsorption on The Si(111)-(7x7) Surface : From Two Dimensional Gas to Nanocluster Array2003

    • Author(s)
      Kehui Wu et al.
    • Journal Title

      Physical Review Letters 91

      Pages: 126101-126101

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Precipitation processes in an Al-2.5Cu-1.5Mg (wt. %) alloy microalloyed with Ag and Si2003

    • Author(s)
      K.Raviprasad et al.
    • Journal Title

      Acta Materialia 51

      Pages: 5037-5050

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] STM/STS studies of the structural phase transition in the growth of ultra-thin Bi films on Si(111)2003

    • Author(s)
      J.T.Sadowski et al.
    • Journal Title

      Acta Physica Polonica A104

      Pages: 381-387

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Layer-by-layer growth of Ag on GaN(0001) surface2003

    • Author(s)
      Kehui Wu et al.
    • Journal Title

      Appl.Phys.Lett. 82

      Pages: 1389-1391

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Na Adsorption on The Si(111)-(7x7) Surface : From Two Dimensional Gas to Nanocluster Array2003

    • Author(s)
      Kehui Wu et al.
    • Journal Title

      Phys.Rev.Lett. 91

      Pages: 126101-126101

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Precipitation processes in an Al-2.5Cu-1.5Mg (wt.%) alloy microalloyed with Ag and Si2003

    • Author(s)
      K.Raviprasad et al.
    • Journal Title

      Acta Mater. 51

      Pages: 5037-5050

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] STM/STS studies of the structural phase transition in the growth of ultra-thin Bi films on Si(111)2003

    • Author(s)
      J.T.Sadowski et al.
    • Journal Title

      Acta Phys.Pol.A 104

      Pages: 381-387

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Origin of the Stability of Ge(105) on Si : A New Structure Model and Surface Strain Relaxation2002

    • Author(s)
      Y.Fujikawa et al.
    • Journal Title

      Physical Review Letters 88

      Pages: 176101-176101

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Adsorption of Fluorinated C_<60> on the Si(111)-(7x7) Surface Studied by Scanning Tunneling Microscopy and High-Resolution Electron Energy Loss Spectroscopy2002

    • Author(s)
      Y.Fujikawa et al.
    • Journal Title

      Japanese Journal of Applied Physics 41

      Pages: 245-249

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fluorine etching on the Si(111)-7x7 surfaces using fluorinated fullerene2002

    • Author(s)
      Y.Fujikawa et al.
    • Journal Title

      Surface Science 521

      Pages: 43-48

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fluorinated fullerene thin films on Si(111)-7x7 surface2002

    • Author(s)
      J.T.Sadowski et al.
    • Journal Title

      Materials Characterization 48

      Pages: 127-132

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Rebonded SB step model of Ge/Si(105)1x2 : A first-principles theoretical study2002

    • Author(s)
      T.Hashimoto et al.
    • Journal Title

      Surface Science 513

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Nanofaceting of unit cells and temperature dependence of the surface reconstruction and morphology of Si(105) and (103)2002

    • Author(s)
      R.G.Zhao et al.
    • Journal Title

      Surface Science 517

      Pages: 98-114

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Modification of electron density in surface states : standing wave observation on Pd overlayers by STM2002

    • Author(s)
      Y.Hasegawa et al.
    • Journal Title

      Surface Science 514

      Pages: 84-88

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Origin of the Stability of Ge(105) on Si : A New Structure Model and Surface Strain Relaxation2002

    • Author(s)
      Y.Fujikawa et al.
    • Journal Title

      Phys.Rev.Lett. 88

      Pages: 176101-176101

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Adsorption of Fluorinated C_<60> on the Si(111)-(7x7) Surface Studied by Scanning Tunneling Microscopy and High-Resolution Electron Energy Loss Spectroscopy2002

    • Author(s)
      Y.Fujikawa et al.
    • Journal Title

      Jpn.J.Appl.Phys. 41

      Pages: 245-249

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Fluorine etching on the Si(111)-7x7 surfaces using fluorinated fullerene2002

    • Author(s)
      Y.Fujikawa et al.
    • Journal Title

      Surf.Sci. 521

      Pages: 43-48

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Rebonded SB step model of Ge/Si(105)1x2 : A first-principles theoretical study2002

    • Author(s)
      T.Hashimoto et al.
    • Journal Title

      Surf.Sci. 513

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Nanofaceting of unit cells and temperature dependence of the surface reconstruction and morphology of Si(105) and (103)2002

    • Author(s)
      R.G.Zhao et al.
    • Journal Title

      Surf.Sci. 517

      Pages: 98-114

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Modification of electron density in surface states : standing wave observation on Pd overlayers by STM2002

    • Author(s)
      Y.Hasegawa et al.
    • Journal Title

      Surf.Sci. 514

      Pages: 84-88

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Effect of nitridation on the growth of GaN on ZrB_2(0001)/Si(111) by molecular beam epitaxy

    • Author(s)
      Zhi-Tao Wang et al.
    • Journal Title

      Journal of Applied Physics (in press)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] シリコン基板への単一極性 GaN 成長を可能にするエピタキシャルZrB_2薄膜

    • Author(s)
      高村(山田)由起子 et al.
    • Journal Title

      日本物理学会誌 (印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Charge transfer in the atomic structure of Ge(105)

    • Author(s)
      Y.Fujikawa et al.
    • Journal Title

      Applied Surface Science (in press)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Effect of nitridation on the growth of GaN on ZrB_2(0001)/Si(111) by molecular beam epitaxy

    • Author(s)
      Zhi-Tao Wang et al.
    • Journal Title

      J.Appl.Phys (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Growth of mono-polar GaN on Si(111) via epitaxial ZrB_2 buffer layer

    • Author(s)
      Yukiko Yamada-Takamura et al.
    • Journal Title

      BUTSURI (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Charge transfer in the atomic structure of Ge(105)

    • Author(s)
      Y.Fujikawa et al.
    • Journal Title

      Appl.Surf.Sci. (in press)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Publications] Kehui Wu, Y.Fujilawa, T.Nagao, Y.Hasegawa, K.S.Nakayama, Q.K.Xue, E.G.Wang, T.Briere, V.Kumar, Y.Kawazoe, S.B.Zhang, T.Sakurai: "Na Adsorption on The Si(111)-(7x7) Surface : From Two Dimensional G as to Nanocluster Array"Physical Review Letters. 91. 12601 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] J.T.Sadowski, T.Nagao, M.Saito, S.Yaginuma, F.Fujikawa, T.Ohno, T.Sakurai: "STM/STS studies of the structural phase transition in the growth of ultra-thin Bi films on Si(111)"Acta Physica Polonica A. 104. 381-387 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Kehui Wu, Q, Z, Xue, R.Z.Bakhtizin, Y.Fujikawa, X.Li, T.Nagao, Q.K.Xue, T.Sakurai: "Layer-by-layer growth of Ag on GaN(0001) surface"Appl.Phys.Lett.. 82. 1389-1391 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] R.Z.Bakhtizin, K.H.Wu, Q.Z.Xue, Q.K.Xue, T.Nagao, T.Sakurai: "STM study of Ag film initial stages growth on a GaN(0001) surface grown by MBE"Phys.Low-Dimensional Structures. 3-4. 21-29 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] S.Yaginuma, T.Nagao, J.Sadowski, A.Pucci, F.Fujiwara, T.Sakurai: "Surface pre-melting and surface flattening of Bi nanofilm on Si(111)-7x7"Surface Science Letters. 547. L877-L881 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] R.Z.Bakhtizin, Q.-Zh.Xue, Q.-K.Xue, Y.Hasegawa, I.S.T.Tsong, T.Sakurai: "Atomic Structure of Heteroepitaxial GaN Films"Microsystems Engineering 2002. 1. 30-36 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Fujikawa, K.Akiyama, T.Nagao, T.Sakurai, M.G.Lagally, T.Hashimoto, Y.Morikawa, K.Terakura: "Origin of the Stability of Ge(105)on Si : A New Structure Model and Surface Strain Relaxation"Physical Review Letters. 88. 176101-1-176101-4 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Y.Fujikawa, J.T.Sadowski, K.F.Kelly, K.S.Nakayama, E.T.Mickelson, R.H.Hauge, J.L.Margrave, T.Sakurai: "Adsorption of Fluorinated C60 on the Si(111)-(7x7)Surface Studied by Scanning Tunneling Microscopy and High-Resolution Electron Energy Loss Spectroscopy"Jpn. J. Appl. Phys.. 41. 245-259 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] J.T.Sadowski, Y.Fujikawa, K.F.Kelly, K.Nakayama, T.Sakurai, E.T.Mickelson, R.H.Hauge, J.L.Margrave: "Fluorinated fullerene thin films on Si(111)-7x7 surface"Materials Characterization. 48. 127-132 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] R.G.Zhao, Zheng Gai, Wenjie Li, Jinlong Jiang, Y.Fujikawa, T.Sakurai, W.S.Yang: "Nanofaceting of unit cells and temperature dependence of the surface reconstruction and morphology of Si(105)and(103)"Surf. Sci.. 517. 98-114 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 長尾忠昭: "高波数分解EELS・LEED法によるナノ物性計測"電子顕微鏡. 37. 103-108 (2002)

    • Related Report
      2002 Annual Research Report

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Published: 2002-04-01   Modified: 2016-04-21  

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