| Budget Amount *help |
¥49,660,000 (Direct Cost: ¥38,200,000、Indirect Cost: ¥11,460,000)
Fiscal Year 2005: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Fiscal Year 2004: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2003: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2002: ¥40,430,000 (Direct Cost: ¥31,100,000、Indirect Cost: ¥9,330,000)
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| Research Abstract |
(1)Syntheses of super lattice thin films of Pb(Sc1/2Nb1/2)O3/PbTiO3 and dielectric properties
Highly oriented Pb(Sc_<1/2>Nb_<1/2>)O_3 (PSN) and PbTiO_3 (PT) super-lattice thin films are synthesized on single-stepped SrTiO_3 (001) substrates by pulsed laser deposition (PLD) technique. SrRuO_3 is deposited on the substrate as a bottom electrode layer for dielectric measurements. The orientation and structure of the films are checked by X-ray diffraction (XRD) method. Clear super-lattice reflections are observed by XRD and the period of super-lattice, the correlation length and the mosaicity are calculated from XRD profiles of the super-lattice. Real part of the dielectric constant is about 350 at room temperature in the frequency range of 102〜105 Hz.
(2)Electric-field-induced resistance switching observed in transition-metal-oxide thin films
We show that polarity-dependent, nonvolatile resistance switching by electric field occurs in the thin film of various transition-metal oxides in almost the same manner. This result indicates that contrary to the general acceptance, perovskite manganite is by no means a special compound for this phenomenon. It is also suggested that the resistance switching is not dominated by a detailed electronic structure of each sample, but dominated by a more general origin, e.g., crystalline defect.
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