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Ultra-High-Speed and High-Precision Integration Circuit Using Si(110) Surface Metal Substrate SOI Balanced-CMOS

Research Project

Project/Area Number 14205052
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionTOHOKU UNIVERSITY

Principal Investigator

OHMI Tadahiro  TOHOKU UNIVERSITY, New Industry Creation Hatchery Center, Professor, 未来科学技術共同研究センター, 教授 (20016463)

Co-Investigator(Kenkyū-buntansha) HIRAYAMA Masaki  TOHOKU UNIVERSITY, New Industry Creation Hatchery Center, Associate Professor, 未来科学技術共同研究センター, 助教授 (70250701)
KOTANI Koji  TOHOKU UNIVERSITY, Graduate School of Engineering, Associate Professor, 大学院・工学研究科, 助教授 (20250699)
SUGAWA Shigetoshi  TOHOKU UNIVERSITY, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (70321974)
Project Period (FY) 2002 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥55,380,000 (Direct Cost: ¥42,600,000、Indirect Cost: ¥12,780,000)
Fiscal Year 2003: ¥15,860,000 (Direct Cost: ¥12,200,000、Indirect Cost: ¥3,660,000)
Fiscal Year 2002: ¥39,520,000 (Direct Cost: ¥30,400,000、Indirect Cost: ¥9,120,000)
KeywordsSi(110)surface / Si_3N_4 gate insulator / Balanced-CMOS / 1 / f noise / Room Temperature 5 step Cleaning / System LSI / Channel mobility / Microwave-excited high-density plasma / Si(110) / SOI / CMOS / 陽極化成
Research Abstract

In order to improve the quality of Si_3N_4 gate insulator used as the gate insulator in MISFET, microwave-excited Xe plasma gas was used instead of conventional Ar plasma. Xe plasma can realize damage-free processes because the electron temperature is very low (0.5 eV). As a result, life time of the insulator (Qbd) became 10^4 times as long as that of the conventional one. In addition, the room temperature 5 steps cleaning were introduced instead of the conventional RCA cleaning. This cleaning can realize flat Si(110) surface (Ra:=0.08nm). Therefore, 1/f noise was suppressed 10^2 times as low as the conventional level and hole mobility was 2.5 times improved and balanced as compared with electron mobility.
Appling those technologies balanced-CMOS in which the areas of nMOS and pMOS are the same was fabricated. Theoretically predicted properties of the balanced-CMOS were confirmed experimentally. Particularly, the 101 steps CMOS ring oscillation was successfully observed and the merits of the usage of Si(110)surface as compared with Si(100)surface was confirmed. As a result, the technology for the fabrications of system-LSI with operating frequency range above 10 GHz was established for network home information appliances in the next generation.

Report

(3 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • Research Products

    (19 results)

All Other

All Publications (19 results)

  • [Publications] K.Tanaka, K.Watanabe, H.Ishino, S.Sugawa, A.Teramoto, M.Hirayama, T.Ohmi: "A Technology for Reducing Flicker Noise for ULSI Applications"Jpn.J.Appl.Phys.. Vol.42 No.4B. 2106-2109 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Goto, M.Hirayama, H.Yamauchi, M.Moriguchi, S.Sugawa, T.Ohmi: "A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region"Jpn.J.Appl.Phys.. Vol.42 No.4B. 1887-1891 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Takahashi, H.Sakurai, A.Yamada, K.Funaiwa, K.Hirai, S.Urabe, T.Goto, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi: "Oxygen radical treatment applied to ferroelectric thin films"Applied Surface Science. Vol.216. 239-245 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I.Takahashi, H.Sakurai, A.Yamada, K.Funaiwa, K.Hirai, S.Urabe, T.Goto, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi: "Ferroelectric Sr_2(Ta_<1-x>,nb_x)_2O_7 with a lowDielectric Constant by Plasma Physical vapor Deposition and Oxygen Radical Treatment"Jpn.J.Appl.Phys.. Vol.42 No.4B. 2050-2054 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.TANAKA, K.WATANABE, H.ISHINO, S.SUGAWA, A.TERAMOTO, M.HIRAYAMA, T.OHMI: "Technology for Reducing Flicker Noise for ULSI Applications"Jpn.J.Appl.Phys.. Vol.42 No.4B. 2106-2109 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.GOTO, M.HIRAYAMA, H.YAMAUCHI, M.MORIGUCHI, S.SUGAWA, T.OHMI: "A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region"Jpn.J.Appl.Phys.. Vol.42 No.4B. 1887-1891 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I Takahashi, H.Sakurai, A.Yamada, K.Funaiwa, K.Hirai, S.Urabe, T.Goto, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi: "Oxygen radical treatment applied to ferroelectric thin films"Applied Surface Science. Vol.216. 239-245 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] I TAKAHASHI, H.SAKURAI, A.YAMADA, K.FUNAIWA, K.HIRAI, S.URABE, T.GOTO, M.HIRAYAMA, A.TERAMOTO, S.SUGAWA, T.OHMI: "Ferroelectric Sr_2 (Ta_<1-x>,Nb_x) _2O_7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment"Jpn.J.Appl.Phys.. Vol.42 No.4B. 2050-2054 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] K.TANAKA, K.WATANABE, H.ISHINO, S.SUGAWA, A.TERAMOTO, M.HIRAYAMA, T.OHMI: "A Technology for Reducing Flicker Noise for ULSI Applications"Jpn.J.Appl.Phys.. Vol.42 No.4B. 2106-2109 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.TANAKA, Z.CHUANJIE, Y.HAYAKAWA, M.HIRAYAMA, A.TERAMOTO, S.SUGAWA, T.OHMI: "High-Quality Silicon Oxide Film Formed by Diffusion Region Plasma Enhanced Chemical Vapor Deposition and Oxygen Radical Treatment Using Microwave-Excited High-Density Plasma"Jpn.J.Appl.Phys.. Vol.42 No.4B. 1911-1915 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.GOTO, M.HIRAYAMA, H.YAMAUCHI, M.MORIGUCHI, S.SUGAWA, T.OHMI: "A New Microwave-Excited Plasma Etching Equipment for Separating Plasma Excited Region from Etching Process Region"Jpn.J.Appl.Phys.. Vol.42 No.4B. 1887-1891 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] I.Takahashi, H.Sakurai, A.Yamada, K.Funaiwa, K.Hirai, S.Urabe, T.Goto, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi: "Oxygen radical treatment applied to ferroelectric thin films"Applied Surface Science. Vol.216. 239-245 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] I.TAKAHASHI, H.SAKURAI, A.YAMADA, K.FUNAIWA, K.HIRAI, S.URABE, T.GOTO, M.HIRAYAMA, A.TERAMOTO, S.SUGAWA, T.OHMI: "Ferroelectric Sr_2 (Ta_<1-x>, Nb_x)_2O_7 with a Low Dielectric Constant by Plasma Physical Vapor Deposition and Oxygen Radical Treatment"Jpn.J.Appl.Phys.. Vol.42 No.4B. 2050-2054 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] A.Morimoto, K.Kotani, K.Takahashi, S.Sugawa, T.Ohmi: "Analysis of High-Speed Signal Behavior in a Miniaturized Interconnect"IEICE Transactions on Electronics. E85-C・5. 1111-1118 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] N.Inoue, S.Sugawa, T.Ohmi: "Experimental Examination of Formation Mechanism of Nano-size Periodic Porous Silicon"201st Electrochemical Society Meeting. 2002・1. 62 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] K.Tanaka, K.Watanabe, H.Ishino, S.Sugawa, A.Teramoto, T.Ohmi: Extended Abstracts of the 2002 international Conference on Solid State Devices and Materials. (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 樋口正顕, 諏訪智之, 大嶋一郎, Cheng Weitao, 寺本章伸, 平山昌樹他: "プラズマ酸化、酸窒化、窒化によるゲート絶縁膜中に含まれる希ガス原子が電気的特性に与える影響"電子情報通信学会技術報告. 102・415. 19-26 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] 田中康太郎, 渡辺一史, 石野英明, 須川成利, 寺本章伸, 平山昌樹, 大見忠弘: "シリコン(100)面の原子オーダー平坦化における1/fノイズ低減効果"電子情報通信学会技術報告. 102・415. 33-37 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] I.Ohshima, W.Cheng, M.Hirayama, A.Teramoto, S.Sugawa, T.Ohmi et al.: "Highly Reliable Silicon Nitride Gate Dielectrics Grown at Low Temperature by Microwave-Excited High-Density Plasma"Fouth international Symposium on Control of Semiconductor Interfaces. A5-2 (2002)

    • Related Report
      2002 Annual Research Report

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Published: 2002-04-01   Modified: 2016-04-21  

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