phase-field mode for facet crystal growth and measurement of its interface kinetics

• Project/Area Number: 14205106
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Material processing/treatments
• Research Institution: The University of Tokyo
• Principal Investigator: SUZUKI Toshio The University of Tokyo, Department of Materials Engineering, Professor, 大学院・工学系研究科, 教授 (70115111)
• Co-Investigator(Kenkyū-buntansha): IKEDA Minoru The University of Tokyo, Department of Materials Engineering, Assistant, 大学院・工学系研究科, 助手 (50167243)
• Project Period (FY): 2002 – 2004
• Project Status: Completed (Fiscal Year 2004)
• Budget Amount: ¥48,490,000 (Direct Cost: ¥37,300,000、Indirect Cost: ¥11,190,000); Fiscal Year 2004: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000); Fiscal Year 2003: ¥27,300,000 (Direct Cost: ¥21,000,000、Indirect Cost: ¥6,300,000); Fiscal Year 2002: ¥14,170,000 (Direct Cost: ¥10,900,000、Indirect Cost: ¥3,270,000)
• Keywords: phase-field model / silicon / dendrite / undercooling

Research Abstract

A phase-field model for faceted dendrite growth of silicon from the undercooled melts of silicon-nickel alloys has been developed by using the phase-field model which is derived last year. and two-dimensional dendrite growth experiments. Phase-field parameters are derived at a thin interface limit and used in the simulations. For increasing computational efficiency an adaptive mesh algorism is used and it is shown that the interfacial Peclet number should be sufficiently small so as to obtain the correct growth velocity. The results show that faceted dendrite growth velocity follows a power law relationship to undercooling and there is a scaling law between the tip size of a dendrite and the growth velocity as sown for silicon. Phase-field simulations have been applied to the subsequent experiments on two-dimensional faceted silicon dendrite growth from the undercooled melt of Si-6wt%Ni alloy, in which the molten alloy film was undercooled up to 115K and dendrites growing in a thin film of the molten alloy were in-situ observed using a high-speed video camera. Both the in-situ observation of dendrite growth morphology and the EBSP crystallographic analysis for solidified samples show that both a <211> twin dendrite and a <100> twin-free dendrite grow in the range of the undercooling from 50 to 110K. At small undercooling less than 60K rod-like crystals grow with <211> growth direction. Growth velocity of dendrites was also measured at different undercooling. Growth velocity of <211> dendrites is slightly larger than that of <100> dendrites though the data are widely scattered. The upper envelope of the data is regarded to give the correct dendrite growth velocity and it is compared with phase-field simulations. Growth velocity in both follows power relationships to undercooling and the value of linear kinetic coefficient is estimated to be 0.01 m/sK.

Research Products

• [Journal Article] Phase-field modeling for faceted dendrite growth of silicon (2004)
  • Author(s): H.Kasajima, T.Suzuki, S.G.Kim, W.T.Kim
  • Journal Title: Transactions of the Material Research Society of Japan Vol.29 Pages: 3779-3782
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Phase-field model with a reduced interface diffuseness (2004)
  • Author(s): S.G.Kim, W.T.Kim, T.Suzuki
  • Journal Title: Journal of Crystal Growth Vol.263 Pages: 620-626
  • Description: 「研究成果報告書概要(和文)」より
• [Journal Article] Phase-field modeling for faceted dendrite growth of silicon (2004)
  • Author(s): S.G.Kim, W.T.Kim, T.Suzuki
  • Journal Title: Journal of Crystal Growth Vol.263 Pages: 620-620
• [Publications] H.Kasajima, E.Naganob, T.Suzuki, S.G.Kim, W.T.Kim: "Phase-field Modeling for Facet Dendrite Growth of Silicon"Science and Technology of Advanced Materials. Vol.5・No.1(印刷中). (2004)
• [Publications] H.Kasajima, T.Suzuki, S.G.Kim, W.T.Kim: "Phase-field Modeling for Faceted Dendrite Growth of Silicon"Transactions of the MRS-J. (掲載決定). (2004)