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Establishment of new method of crystal growth with well-controlled convection by electro-magnetic force

Research Project

Project/Area Number 14350010
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionKYUSHU UNIVERSITY

Principal Investigator

KAKIMOTO Koichi  Kyushu University, RIAM, Professor, 応用力学研究所, 教授 (90291509)

Co-Investigator(Kenkyū-buntansha) HOSHIKAWA Keigo  Shinshu University, Faculty of Education, Professor, 教育学部, 教授 (10231573)
ISHII Hideo  Kyushu University, RIAM, Research Associate, 応用力学研究所, 助手 (50038551)
LIU Lijun  Kyushu University, RIAM, Research Associate, 応用力学研究所, 助手 (00380535)
橋本 良夫  九州大学, 応用力学研究所, 助教授 (80180842)
Project Period (FY) 2002 – 2004
Project Status Completed (Fiscal Year 2004)
Budget Amount *help
¥15,100,000 (Direct Cost: ¥15,100,000)
Fiscal Year 2004: ¥2,400,000 (Direct Cost: ¥2,400,000)
Fiscal Year 2003: ¥3,100,000 (Direct Cost: ¥3,100,000)
Fiscal Year 2002: ¥9,600,000 (Direct Cost: ¥9,600,000)
KeywordsSilicon / Crystal growth / Electromagnetic force / Convection / バルク結晶成長 / 電磁場印加結晶成長 / シミュレーション
Research Abstract

Application of magnetic fields in silicon Czochralski (CZ) crystal growth is an effective method for controlling the shape of the melt-crystal interface and for controlling melt convection in a crucible and therefore for improving crystal quality. Such a method is more effective for crystals with large diameter, since flow in a crucible becomes unstable due to large mass of the melt in a crucible.
A transverse magnetic field applied to silicon CZ growth processes (TMCZ) has great potential for controlling melt flow. The melt flow in a crucible and, hence, the global thermal field within the furnace are principally three-dimensional (3D) under the influence of a transverse magnetic field. Although there are many excellent published works on numerical modeling of TMCZ growth, these models are limited to the melt or to the melt and the crystal due to the requirement of large computer memory and the requirement of a long time for computation. However, since a TMCZ growth furnace is a highly … More nonlinear and conjugated system, 3D global modeling is obviously necessary. Liu and Kakimoto recently proposed a partial 3D global model that makes partial 3D global modeling feasible with moderate requirements of computer resources and computation time. We applied the newly developed code to the analysis of temperature distribution near the melt-crystal interface to clarify the temperature gradient in a crystal, which determines distribution of point defects and voids in a crystal.
A partly three-dimensional (3D) global analysis was carried out numerically for a small silicon Czochralski furnace in a transverse magnetic field to clarify temperature distribution near a melt-crystal interface. The melt-crystal interface shape and the axial temperature gradients in solid and liquid near the interface were calculated as functions of the magnetic field intensity and the pulling rate of a crystal. It was found that the axial temperature gradient in the crystal increases with increase in the crystal-pulling rate and that in the melt decreases near the interface. With increase in intensity of the magnetic field, the axial temperature gradients in both crystal and melt increase. The influence of melt convection becomes smaller with increase in either the magnetic field intensity or the crystal-pulling rate. The melt-crystal interface moves upward with increase in either the ratio between crystal pulling rate and temperature gradient in the crystal or the intensity of the applied magnetic field. Less

Report

(4 results)
  • 2004 Annual Research Report   Final Research Report Summary
  • 2003 Annual Research Report
  • 2002 Annual Research Report
  • Research Products

    (20 results)

All 2005 2004 2003 Other

All Journal Article (11 results) Book (1 results) Patent(Industrial Property Rights) (1 results) Publications (7 results)

  • [Journal Article] Numerical study of the effects of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth2005

    • Author(s)
      Koichi Kakimoto, Lijun Liu
    • Journal Title

      Crystal Research and Technology 38, No.7-8

      Pages: 716-725

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Silicon crystal growth from the melt : Analysis from atomic and macro scales2005

    • Author(s)
      Koichi Kakimoto, Lijun Liu, Tomonori Kitashima, et al.
    • Journal Title

      Crystal Research and Technology 40, No.4-5

      Pages: 307-312

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system with transverse magnetic fields2005

    • Author(s)
      Koichi Kakimoto, Takashige Shinozaki, Yoshio Hashimoto
    • Journal Title

      International Journal of Materials and Product Technology 22・1/2/3

      Pages: 84-94

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system with transverse magnetic fields2005

    • Author(s)
      Koichi Kakimoto, Takashige Shinozaki, Yoshio Hashimoto
    • Journal Title

      Int.J.of Materials and Product Technology 22・1/2/3

      Pages: 84-94

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Fundamentals for chemical experiment2005

    • Author(s)
      Koichi Kakimoto
    • Journal Title

      Jikken Kagaku Koza 5

      Pages: 259-270

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Numerical study of the effect of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth2005

    • Author(s)
      Koichi Kakimoto, Lijun Liu
    • Journal Title

      Crystal Research and Technology 38,No.7-8

      Pages: 716-725

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Silicon crystal growth from the melt : Analysis from atomic and macro scales2005

    • Author(s)
      Koichi Kakimoto, Lijun Liu, Tomonori Kitashima, et al.
    • Journal Title

      Crystal Research and Technology 40,No.4-5

      Pages: 307-312

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Computational study of formation mechanism of impurity distribution in a silicon crystal during solidification2004

    • Author(s)
      Lijun Liu, Koichi Kakimoto, Toshinori Taishi, Keigo Hoshikawa
    • Journal Title

      Journal of Crystal Growth 265

      Pages: 399-409

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Numerical analysis of continuous charge of lithium niobate in a double-crucible Czochralski system using the accelerated crucible rotation technique2004

    • Author(s)
      Tomonori Kitashima, Lijun Liu, Kenji Kitamura, Koichi Kakimoto
    • Journal Title

      Journal of Crystal Growth 266

      Pages: 109-116

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Effects of shape of an inner crucible on convection of lithium niobate melt in a double-crucible Czochralski process using the accelerated crucible rotation technique2004

    • Author(s)
      Tomonori Kitashima, Lijun Liu, Kenji Kitamura, Koichi Kakimoto
    • Journal Title

      Journal of Crystal Growth 267・3-4

      Pages: 574-582

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Effects of shape of an inner crucible on convection of lithium niobate melt in a double-crucible Czochralski process using the accelerated crucible rotation2004

    • Author(s)
      Tomonori Kitashima, Lijun Liu, Kenji Kitamura, Koichi Kakimoto
    • Journal Title

      Journal of Crystal Growth 267・3-4

      Pages: 574-582

    • Related Report
      2004 Annual Research Report
  • [Book] 実験化学講座5 化学実験のための基礎技術2005

    • Author(s)
      柿本浩一
    • Publisher
      (株)丸善
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Patent(Industrial Property Rights)] ハイブリッドEBセル2003

    • Inventor(s)
      柿本 浩一, 高橋 弘
    • Industrial Property Rights Holder
      エイコーエンジニアリング
    • Industrial Property Number
      平15-265437
    • Filing Date
      2003-11-15
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Publications] Kakimoto K, Liu LJ: "Numerical study of the effects of cusp-shaped magnetic fields and thermal conductivity on the melt-crystal interface in CZ crystal growth"Crystal Growth Technology. 38. 716-725 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Kakimoto K, Konishi H, Tashiro A, et al.: "Stabilization of melt convection of lithium niobate using accelerated crucible rotation technique"J. Electrochem. Society. 150(5). J17-J22 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Kakimoto K, Tashiro A, Shinozaki T, et al.: "Mechanisms of heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system"J.Crystal Growth. 243(1). 55-65 (2002)

    • Related Report
      2003 Annual Research Report
  • [Publications] Kakimoto K: "Effects of rotating magnetic fields on temperature and oxygen distributions in silicon melt"J.Crystal Growth. 237. 1785-1790 (2002)

    • Related Report
      2003 Annual Research Report
  • [Publications] Kakimoto K, Tashiro A, Ishii H, et al.: "Active control of melt convection of silicon by electromagnetic force under cusp-shaped magnetic fields"Material Science Semiconductor Processing. 5(4-5). 341-345 (2002)

    • Related Report
      2003 Annual Research Report
  • [Publications] Kamimoto K, Tashiro A, Shinozaki T, Ishii H, Hashimoto Y: "Mechanisms of heat and oxygen transfer in silicon melt in an electromagnetic Czochralski system"JOURNAL OF CRYSTAL GROWTH. 243(1). 55-65 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Kamimoto K, Tashiro A, Ishii H, Shinozaki T: "Active control of melt convection of silicon by electromagnetic force under cusp-shaped magnetic fields"Materials Science in Semiconductor Processing. (In press). (2002)

    • Related Report
      2002 Annual Research Report

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Published: 2002-04-01   Modified: 2016-04-21  

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