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Research on hetero-structure growth by a supersonic source beams and an atomic layer epitaxy.

Research Project

Project/Area Number 14350012
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionUniversity of Miyazaki

Principal Investigator

OZEKI Masashi  University of Miyazaki, Faculty of Eng., Prof., 工学部, 教授 (70336288)

Co-Investigator(Kenkyū-buntansha) IKAR Tetuo  University of Miyazaki, Faculty of Eng., Prof., 工学部, 教授 (70113214)
YOSHINO Kenji  University of Miyazaki, Faculty of Eng., Assistant Prof., 工学部, 助教授 (80284826)
MAEDA Kouji  University of Miyazaki, Faculty of Eng., Assistant Prof., 工学部, 助教授 (50219268)
Project Period (FY) 2002 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥12,900,000 (Direct Cost: ¥12,900,000)
Fiscal Year 2005: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2004: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2003: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2002: ¥6,300,000 (Direct Cost: ¥6,300,000)
Keywordscrystal growth / semiconductor / metal junction / epitaxial / atomic layer growth / compound semiconductor / 成長核 / 原子層エピタキシー / GaAs / ヘテロ接合 / 超音速分子ビーム / 界面 / 歪エネルギー / 自動停止機構 / Si / 異種材料接合 / 原始層成長 / GaP / InAs / 自己停止機構 / 超音速分子線 / エピタキシー
Research Abstract

Basic research on the hetero-structure growth was carried out for various materials including semiconductors, insulating materials, and metals. It is important for the growth of a high quality hetero-interface to precisely control the surface migration of the precursors and the nucleus in the first stage of the hetero-growth. It was found that the control of these parameters was difficult for the conventional growth method such as molecular beam epitaxy (MBE) or metal-organic chemical vapor deposition (MOCVD). Therefore, a new growth method using "a supersonic source beam method" and "an atomic layer epitaxy" was developed for the precise growth control. This new method made it possible to independently control the surface migration of precursors from other growth parameters such as growth temperature. By using this growth method, we could produce an extremely high density of nuclei (three order higher than the conventional growth) in the first stage of the hetero-growth.
We could select the kind of nuclei useful for the hetero-growth and control its density in the first stage of the growth. After this process, we grew the hetero-structures including semiconductor/semiconductor hetero-structures and semiconductor/metal hetero-structures by the atomic layer epitaxy (Pulsed-Jet-Epitaxy). The atomic layer epitaxy enabled us to control the layer-by-layer growth at an atomic level, which was found for growing a high quality hetero-structure. Furthermore, we could control the dislocation and the relaxation of the interface strain by the atomic layer epitaxy. From these basic research, we could grow high quality hetero-structures for various material systems.

Report

(5 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • 2002 Annual Research Report
  • Research Products

    (38 results)

All 2006 2005 2004 2003 2002 Other

All Journal Article (32 results) Publications (6 results)

  • [Journal Article] Atomic layer epitaxy of GaMnAs2006

    • Author(s)
      M.Ozeki
    • Journal Title

      phys. stat. sol.(a) 203(印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] A piezoelectric photothermal study on InGaAs/GaAs quantum well heterostructures2006

    • Author(s)
      P.Wang
    • Journal Title

      Materials Science and Engineering C 26・11(印刷中)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Atomic layer epitaxy of GaMnAs2006

    • Author(s)
      M.Ozeki, T.Haraguchi, A.Fujita
    • Journal Title

      phys.Stat.sol.(a) (to be published.)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] A piezoelectric photothermal study on InGaAs/GaAs quantum well heterostructures2006

    • Author(s)
      P.Wang, T.Nakagawa, A.Fukuyama, K.Maeda, Y.Iwasa, M.Ozeki, Y.Akashi, T.Ikari
    • Journal Title

      Materials Science and Engineering C (to be published.)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] A comparative study of the growth mechanism of InAs/GaAs and GaP/GaAs heterostructures and strained layered superlattices by atomic layer epitaxy2005

    • Author(s)
      M.Ozeki
    • Journal Title

      Journal of Crystal Growth 276・2

      Pages: 374-374

    • NAID

      110001868541

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Simulation analysis of dynamical properties of Cl2 on GaAs(001)2005

    • Author(s)
      M.Ozeki
    • Journal Title

      phys. stat. sol.(a) 202

      Pages: 686-686

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] 原子層エピタキシーによるInAs/GaAsとGaP/GaAsヘテロ構造、超格子の成長機構の研究2005

    • Author(s)
      原口智宏
    • Journal Title

      宮崎大学工学部紀要 34

      Pages: 31-31

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Analysis of dynamical properties of Cl_2 on GaAs(001) by trajectory simulation2005

    • Author(s)
      Y.Shimizu
    • Journal Title

      宮崎大学工学部紀要 34

      Pages: 37-37

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] A comparative study of the growth mechanism of InAs/GaAs and Gap/GaAs heterostructures and strained layered superlattices by atomic layer epitaxy2005

    • Author(s)
      M.Ozeki, T.Haraguchi, T.Takeuchi, K.Maeda
    • Journal Title

      J.Crystal Growth 276

      Pages: 374-374

    • NAID

      110001868541

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Simulation analysis of dynamical properties of C12 on GaAs(001)2005

    • Author(s)
      M.Ozeki, Y.Shimizu
    • Journal Title

      phys.stat.sol.(a) 202

      Pages: 686-686

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Analysis of dynamical properties of Cl_2 on GaAs(001) by trajectory simulation2005

    • Author(s)
      Y.Shimizu, M.Ozeki
    • Journal Title

      MEMORIES of the Faculty of Engineering, University of Miyazaki 34

      Pages: 37-37

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Growth mechanism of InAs/GaAs and Gap/GaAs heterostructures and SLS by atomic layer epitaxy2005

    • Author(s)
      M.Ozeki, T.Haraguchi, T.Takeuchi
    • Journal Title

      MEMORIES of the Faculty of Engineering, University of Miyazaki 34

      Pages: 31-31

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Growth mechanism of InAs/GaAs and GaP/GaAs heterostructures by ALE2005

    • Author(s)
      M.Ozeki, T.Haraguchi
    • Journal Title

      Journal of Crystal Growth 276

      Pages: 374-380

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Analysis of dynamical properties on GaAs(001) by trajectory simulation2005

    • Author(s)
      Y.Shimizu, M.Ozeki
    • Journal Title

      Memoirs of the Faculty of Engineering, University of Miyazaki 34

      Pages: 37-42

    • Related Report
      2005 Annual Research Report
  • [Journal Article] 原子層エピタキシーによるInAs/GaAsとGaP/GaAsヘテロ構造、歪超格子の成長機構の研究2005

    • Author(s)
      原口智宏, 尾関雅志
    • Journal Title

      宮崎大学工学部紀要 34

      Pages: 31-36

    • NAID

      110001868541

    • Related Report
      2005 Annual Research Report
  • [Journal Article] A comparative study of the growth mechanism of InAs/GaAs and GaP/GaAs heteristructures and strained layered SLS by ALE2005

    • Author(s)
      M.Ozeki
    • Journal Title

      J.Crystal Growth 272・1

      Pages: 321-321

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Simulation analysis of dynamical properties of Cl_2 on GaAs (001)2005

    • Author(s)
      M.Ozeki
    • Journal Title

      physica status solidi (a) 202・4

      Pages: 691-691

    • Related Report
      2004 Annual Research Report
  • [Journal Article] InAs and GaAs quantum dots grown by hyperthermal source beams2004

    • Author(s)
      M.Ozeki
    • Journal Title

      Journal of Crystal Growth 262

      Pages: 139-139

    • NAID

      110001150771

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] InAs and GaAs quantum dots grown by hyperthermal source beams2004

    • Author(s)
      M.Ozeki, Y.Shimizu
    • Journal Title

      J.Crystal Growth 262

      Pages: 139-139

    • NAID

      110001150771

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] GaAs and InAs quatum dots grown by hyperthermal source molecules2004

    • Author(s)
      M.Ozeki
    • Journal Title

      J.Crystal Growth 262・1

      Pages: 139-139

    • Related Report
      2004 Annual Research Report
  • [Journal Article] 固体表面上の分子動的過程にたいするシミミュレーション技術の開発2003

    • Author(s)
      尾関雅志
    • Journal Title

      宮崎大学工学部紀要 32

      Pages: 91-91

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] GaAs(001)表面における塩素分子の動的振舞いの解析2003

    • Author(s)
      尾関雅志
    • Journal Title

      宮崎大学工学部紀要 32

      Pages: 99-99

    • NAID

      110001149979

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Adsorption dynamics of GaCl on GaAs(001)2x4 β2 relaxation of molecules by collision on a highly corrugated surface2003

    • Author(s)
      M.Ohashi
    • Journal Title

      Chemical Physics letters 370

      Pages: 112-112

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] 半導体ナノ構造の自己組織化2003

    • Author(s)
      尾関雅志
    • Journal Title

      応用物理 72・10

      Pages: 1248-1248

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] MOVPE growth and characterization of ZnTe epilayers on (100)ZnTe : P substrates2003

    • Author(s)
      N.Lovergine
    • Journal Title

      Journal of Crystal Growth 248

      Pages: 37-37

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Simulation of dynamical behaviors of molecules on solid surface2003

    • Author(s)
      M.Ozeki, Y.Shimizu
    • Journal Title

      MEMORIES of the Faculty of Engineering, University of Miyazaki 32

      Pages: 91-91

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Analysis of the dynamical behaviors of chlorine molecules on GaAs(001)2003

    • Author(s)
      M.Ozeki, Y.Shimizu
    • Journal Title

      MEMORIES of the Faculty of Engineering, University of Miyazaki 32

      Pages: 99-99

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Adsorption dynamics of GaCl on GaAs(001)2x4 β2 relaxation of molecules by collision on a highly corrugated surface2003

    • Author(s)
      M.Ohashi, M.Ozeki
    • Journal Title

      Chemical Physics Letters 370

      Pages: 112-112

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Self-organization in semiconductor nano-structures2003

    • Author(s)
      M.Ozeki, Y.Shimizu
    • Journal Title

      OYO BUTURI 72

      Pages: 1248-1248

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] MOVPE growth and characterization of ZnTe epilayers on (100)ZnTe : P substrates2003

    • Author(s)
      N.Lovergine, M.Traversa, P.Prete, K.Yoshino, M.Ozeki, A.M.Mancini
    • Journal Title

      J.Crystal Growth 248

      Pages: 37-37

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Dynamical properties of tertary butylarsine on GaAs(001) surface2002

    • Author(s)
      M.Ozeki
    • Journal Title

      Physical Research B B139

      Pages: 485-485

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Dynamical properties of tertary butylarsine on GaAs(001) surface2002

    • Author(s)
      M.Ozeki, M.Ohashi, Y.Yanaka
    • Journal Title

      Physical Research B 193

      Pages: 485-485

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Publications] 尾関 雅志: "IuAs and GeAs quantum dots grown by hyperthermal source beams"Journal of Crystal Growth. 262・1. 139-144 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] 尾関 雅志: "Adsorption dynamics of GaCl on GaAs(001)2×4 β_2"Chemical Physics Letters. 370・1. 112-117 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 尾関 雅志: "半導体のナノ構造の自己組織化"応用物理. 72・10. 1278-1259 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 尾関 雅志: "固体表面上の分子動的過程にたいするシミュレーション技術の開発"宮崎大学工学部紀要. 32. 91-98 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 尾関 雅志: "GaAs(001)表面における塩素分子の動的振舞いの解析"宮崎大学工学部紀要. 32. 99-106 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] 尾関雅志: "Dynamical properties of tertiarybutylarsine on GaAs(001) surface"Nuclear Instruments and Methods in Physics Research B. 193・1. 485-489 (2002)

    • Related Report
      2002 Annual Research Report

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Published: 2002-04-01   Modified: 2016-04-21  

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