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A study on estimation of localized states and its reduction in microcrystalline silicon films 〜An application of resonant photothenmal bending spectroscopy to hetero-structured films〜

Research Project

Project/Area Number 14350163
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionGifu University

Principal Investigator

NONOMURA Shuichi  Gifu University, Graduate School of Engineering, Environmental and Renewable Energy Systems Division, professor, 大学院・工学研究科, 教授 (80164721)

Co-Investigator(Kenkyū-buntansha) YOSHIDA Norimitsu  Gifu University, Graduate School of Engineering, Environmental and Renewable Energy Systems Division, associate professor, 大学院・工学研究科, 助教授 (70293545)
Project Period (FY) 2002 – 2004
Project Status Completed (Fiscal Year 2004)
Budget Amount *help
¥9,900,000 (Direct Cost: ¥9,900,000)
Fiscal Year 2004: ¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 2003: ¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2002: ¥3,700,000 (Direct Cost: ¥3,700,000)
Keywordsmicrocrystalline silicon / microcrystalline silicon carbide / photothermal bending spectroscopy / low energy absorption / 微結晶シリコン系薄膜 / 温度可変光熱ベンディング分光法 / 低エネルギー光吸収 / 微結晶シリコン薄膜 / 微結晶シリコンカーバイト薄膜
Research Abstract

In this study, optical absorption spectra of hydrogenated microcrystalline silicon (μc-Si : H) films have been measured by resonant photothermal bending spectroscopy (R-PBS) to elucidate the origin of extra low energy absorption at photon energy of 0.7〜1.2 eV. The samples were prepared by plasma enhanced chemical vapor deposition method with source gases of SiH_4 and H_2.
First, we found that the low energy absorption was observed for the film prepared with a back pressure 〜10^<-3> Torr of a chamber before the deposition of the film. The absorption coefficient a at a photon energy of 1 eV was 〜10^2 cm^<-1>. On the other hand, the extra absorption was not observed for the film prepared with a back pressure 〜10^<-6> Torr of the chamber. The absorption coefficient a at a photon energy of 1 eV was 〜10^1 cm^<-1>. Furthermore, the extra absorption was not observed in the spectra measured by constant photocurrent method. From these results, it is suggested that the origin of the extra absorption at photon energy of 0.7〜1.2 eV in μc-Si : H films is localized states related to oxygen impurities existing at grain boundaries.
The R-PBS technique was applied to measuring optical absorption spectra of microcrystalline 3C-SiC : H (μc-3C-SiC : H) films. The sample was prepared by hot-wire CVD (catalytic CVD) method. We found that the spectra ranged above photon energy of 2.2 eV reflect the indirect transition due to 3C-SiC crystallites in the film. On the other hand, the absorption below 2.2 eV seems to originate from optical transition at localized states due to impurities.

Report

(4 results)
  • 2004 Annual Research Report   Final Research Report Summary
  • 2003 Annual Research Report
  • 2002 Annual Research Report
  • Research Products

    (22 results)

All 2005 2004 Other

All Journal Article (17 results) Publications (5 results)

  • [Journal Article] Suppression of photo-induced dilation in cyanide treated hydrogenated amorphous silicon films2005

    • Author(s)
      Y.Sobajima, K.Mori, M.Tsukamoto, N.Yoshida, M.Takahashi, H.Kobayashi, S.Nonomura
    • Journal Title

      Solar Energy Materials & Solar Cells 85

      Pages: 177-187

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Annual Research Report 2004 Final Research Report Summary
  • [Journal Article] Suppression of photo-induced dilation in cyanide treated hydrogenated amorphous silicon films2005

    • Author(s)
      Y.Sobajima, K.Mori, M.Tsukamoto, N.Yoshida, M.Takahashi, H.Kobayashi, S.Nonomura
    • Journal Title

      Solar Energy Materials & Solar Cells Vol.85

      Pages: 177-187

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] A Study of the localized state at 0.7〜1.2 eV in the Mc-Si:H film by resonant-PBS and CPM2004

    • Author(s)
      T.Kunii, H.Shibagaki, T.Kiriyama, N.Yoshida, S.Nonomura
    • Journal Title

      Proceedings of 19^<th> European Photovoltaic Solar Energy Conference and Exhibition

      Pages: 1629-1632

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] A Study of the localized state at 0.7〜1.2 eV in the μc-Si : H film by resonant-PBS and CPM2004

    • Author(s)
      T.Kunii, H.Shibagaki, T.Kiriyama, N.Yoshida, S.Nonomura
    • Journal Title

      Proceedings of 19^<th> European Photovoltaic Solar Energy Conference and Exhibition

      Pages: 1629-1632

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] A change of photoinduced dilation of a-Si:H by cyanide treatment2004

    • Author(s)
      Y.Sobajima, K.Mori, M.Tsukamoto.H.Kamiguchi, N.Yoshida, H.Kobayashi, S.Nonomura
    • Journal Title

      Journal of Non-Crystalline Solids 338-340

      Pages: 365-368

    • Related Report
      2004 Annual Research Report
  • [Journal Article] A study of the localized state at 0.7〜1.2 eV in the μc-Si:H by resonant-PBS and CPM2004

    • Author(s)
      T.Kunii, H.Shibagaki, T.Kiriyama, N.Yoshida, S.Nonomura
    • Journal Title

      Proceedings of 19^<th> European Photovoltaic Solar Energy Conference

      Pages: 1629-1632

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Amorphous SiC_x : H films prepared by Cat-CVD method using C_4H_<10> as a C source gas and its application to window layer for Si thin film solar cell

    • Author(s)
      N.Yoshida, K.Takemoto, Y.Yamaguchi, M.Tsukamoto, K.Chikusa, A.Fukuta, T.Itoh, S.Nonomura
    • Journal Title

      Solar Energy Materials & Solar Cells (発表予定)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Preparation of N-doped TiO_2 thin films protecting transparent conducting oxide films for Si thin film solar cells

    • Author(s)
      H.Natsuhara, K.Matsumoto, N.Yoshida, T.Itoh, S.Nonomura, M.Fukawa, K.Sato
    • Journal Title

      Solar Energy Materials & Solar Cells (発表予定)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Formation of the heterojunctions using carbon alloys by the hot-wire CVD method

    • Author(s)
      S.Nonomura, N.Yoshida, T.Itoh
    • Journal Title

      Thin Solid Films (発表予定)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] TiO_2 thin films as protective material for transparent conducting oxides used in Si thin film solar cells

    • Author(s)
      H.Natsuhara, K.Matsumoto, N.Yoshida, T.Itoh, S.Nonomura, M.Fukawa, K.Sato
    • Journal Title

      Solar Energy Materials & Solar Cells (発表予定)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Amorphous SiC_x : H films prepared by Cat-CVD method using C_4H_<10> as a C source gas and its application to window layer for Si thin film solar cells

    • Author(s)
      N.Yoshida, K.Takemoto, Y.Yamaguchi, M.Tsukamoto, K.Chikusa, A.Fukuta, T.Itoh, S.Nonomura
    • Journal Title

      Solar Energy Materials & Solar Cells (in print)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Preparation of N-doped TiO_2 thin films protecting transparent conducting oxide films for Si thin film solar cells

    • Author(s)
      H.Natsuhara, K.Matsumoto, N.Yoshida, T.Itoh, S.Nonoomura, M.Fukawa, K.Sato
    • Journal Title

      Solar Energy Materials & Solar Cells (in print)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Formation of the heterojunctions using carbon alloys by the hot-wire CVD method

    • Author(s)
      S.Nonomura, N.Yoshida, T.Itoh
    • Journal Title

      Thin Solid Films (in print)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] TiO_2 thin films as protective material for transparent conducting oxides used in Si thin film solar cells

    • Author(s)
      H.Natsuhara, K.Matsumoto, N.Yoshida, T.Itoh, S.Nonomura, M.Fukawa, K.Sato
    • Journal Title

      Solar Energy Materials & Solar Cells (in print)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Formation of the heterojunctions using carbon alloys by the hot-wire CVD method

    • Author(s)
      S.Nonomura, N.Yoshida, T.Itoh
    • Journal Title

      Thin Solid Films (印刷中)

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Amorphous SiC_X:H films prepared by Cat-CVD method using C_4H_<10> as a C source gas and its application to window layer for Si thin film solar cell

    • Author(s)
      N.Yoshida, K.Takemoto, Y.Yamaguchi, M.Tsukamoto, K.Chikusa, A.Fukuta, T.Itoh, S.Nonomura
    • Journal Title

      Solar Energy Materials & Solar Cells (印刷中)

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Preparation of N-doped TiO_2 shin films protecting transparent conducting oxide films for Si thin film solar cells

    • Author(s)
      H.Natsuhara, K.Matsumoto, N.Yoshida, T.Itoh, S.Nonomura, M.Fukawa, K.Sato
    • Journal Title

      Solar Energy Materials & Solar Cells (印刷中)

    • Related Report
      2004 Annual Research Report
  • [Publications] K.Chikusa, K.Takemoto, T.Itoh, N.Yoshida: "Preparation of B-doped a-Sil-xCx:H films and heterojunction p-i-n solar cells by Cat-CVD method"Thin Solid Film. 430. 245-248 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Natsuhara, T.Ohashi, S.Ogawa, N.Yoshida: "Hydrogen-radical durability of TiO2 thin films for protecting transparent conducting oxide"Thin Solid Film. 430. 253-256 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] S.NONOMURA: "Chapter 14 in "Photo-Induced metastability in Amorphous semiconductors" edited by Alexander V.kolobov"WILEY-VCH. 16(412) (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Kunii, K.Mori, T.Kiriyama, J.Kitao, N.Yoshida, S.Nonomum: "Resonant phototheermal bending spectroscopy at variable temperature 25-150℃ and its application to hydrogenated microcrystalline silicon films"Review of Scientific Instruments. 74・1. 881-883 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] S.Ogawa, K.Mori, H.Natsuhara, T.Ohashi, R.Sakakiyama, T.Itoh, N.Yoshida, S.Nonomura: "Optical properties of TiO_2 thin films estimated by photothermal deflection spectroscopy"Review of Scientific Instruments. 74・1. 863-865 (2003)

    • Related Report
      2002 Annual Research Report

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Published: 2002-04-01   Modified: 2016-04-21  

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