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A STUDY ON TUNNELING-SPECTROSCOPIC DEVICES WITH NANO-GAP STRUCTURE USING ULTRATHIN SILICON DIOXIDE FILM AS A SPACER

Research Project

Project/Area Number 14350166
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionOsaka University

Principal Investigator

MORITA Mizuho  Osaka University, Graduate School of Engineering, Professor, 大学院・工学研究科, 教授 (50157905)

Co-Investigator(Kenkyū-buntansha) ARIMA Kenta  Osaka University, Graduate School of Engineering, Assistant Professor, 大学院・工学研究科, 助手 (10324807)
Project Period (FY) 2002 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥14,600,000 (Direct Cost: ¥14,600,000)
Fiscal Year 2005: ¥5,200,000 (Direct Cost: ¥5,200,000)
Fiscal Year 2004: ¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2003: ¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 2002: ¥2,700,000 (Direct Cost: ¥2,700,000)
KeywordsNANO-GAP / SENSING / SILICON DIOXIDE / SILICON / ULTRAPURE WATER / CAPACITANCE / CONDUCTANCE / 電子応答 / ナノギャップ構造 / トンネル分光 / 極薄シリコン酸化膜
Research Abstract

Sensing devices with a silicon/nano-gap/silicon structure using a silicon dioxide film as a spacer have been fabricated, and ultrapure water introduced into the nano-gap of the sensing device has been found to be detected by the change of capacitance and conductance for the sensing device. The frequency dependence of capacitance and conductance changes by introducing ultrapure water into the nano-gap has been demonstrated. Scanning electron microscope observation of the cross section of the device structure has shown that a nano-gap structure with a silicon dioxide film as a spacer was fabricated. Fourier transform infrared absorption measurements for the device structure have shown that ultrapure water penetrates into the nano-gap. Near-infrared ray transmission measurements for the device structure have shown that ultrapure water penetrates through the nano-gap and that the nano-gap structure was fabricated as designed, because silicon is transparent to near-infrared ray. It has confirmed that ultrapure water penetrates into the nano-gap because sensing surface is hydrophobic. The effect of silicon dioxide of sensing surface on sensing ultrapure water in the nano-gap has been examined and the condition of high sensitively has been found. We have proposed a sensing model of electron response through states of water.

Report

(5 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • 2002 Annual Research Report
  • Research Products

    (27 results)

All 2005 2004 2003 Other

All Journal Article (16 results) Book (1 results) Publications (10 results)

  • [Journal Article] Development of Nano-Gap Device for Biosensor2005

    • Author(s)
      Satoru Morita, Takaaki Hirokane, Tatsuya Takegawa, Shinichi Urabe, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
    • Journal Title

      Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials

      Pages: 828-829

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] Reaction of Hydrogen-Terminated Si(100) Surfaces with Oxygen at Very Low Pressures during Heating2005

    • Author(s)
      Shinichi URABE, Kazuo NISHIMURA, Syuhei NISHIKAWA, Satoru MORITA, Mizuho MORITA
    • Journal Title

      Japanese Journal of Applied Physics 44・11

      Pages: 8091-8095

    • NAID

      10016871640

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Annual Research Report 2005 Final Research Report Summary
  • [Journal Article] Reaction of Hydrogen-Terminated Si(100) Surfaces with Oxygen at Very Low Pressures during Heating2005

    • Author(s)
      Shinichi URABE, Kazuo NISHIMURA, Syuhei NISHIKAWA, Satoru MORITA, Mizuho MORITA
    • Journal Title

      Japanese Journal of Applied Physics 44(11)

      Pages: 8091-8095

    • NAID

      10016871640

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Electrical Properties of SiC/p-Si(100) Structure2005

    • Author(s)
      Syuhei Nishikawa, Hideaki Hashimoto, Motonori Chikamoto, Minoru Aoki, Kenta Arima, Mizuho Morita
    • Journal Title

      Program and Abstracts, Fourth International Conference on Silicon Epitaxy and Heterostructures

      Pages: 148-149

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Photodetector Characteristics of Metal-Oxide-Semiconductor Tunneling Structures with Transparent Conductive Tin Oxide Gate2005

    • Author(s)
      Motonori Chikamoto, Hideaki Hashimoto, Kosuke Horikoshi, Akihito Shinozaki, Satoru Morita, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
    • Journal Title

      Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials

      Pages: 734-735

    • NAID

      10022543080

    • Related Report
      2005 Annual Research Report
  • [Journal Article] PHOTODETECTION CHARACTERISTICS OF SnO_2-ULTRATHIN SiO_2-Si STRUCTURES2005

    • Author(s)
      Motonori Chikamoto, Hideaki Hashimoto, Kosuke Horikoshi, Akihito Shinozaki, Satoru Morita, Kenta Arima, Junichi Uchikoshi, Mizuho Morita
    • Journal Title

      The Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface - 5, ECS Transactions, The Electrochemical Society 1・1

      Pages: 97-102

    • Related Report
      2005 Annual Research Report
  • [Journal Article] CHARACTERIZATIUN OF TUNNELING CURRENT THROUGH ULTRATHIN SILICON DIOXIDE FILMS BY DIFFERENT-METAL GATES MRTHOD2005

    • Author(s)
      Naoto Yoshii, Tatsuya Okazaki, Takaaki Hirokane, Shinichi Urabe, Kazuo Nishimura, Satoru Morita, Mizuho Morita
    • Journal Title

      The Physics and Chemistry of SiO_2 and the Si-SiO_2 Interface - 5, ECS Transactions, The Electrochemical Society 1・1

      Pages: 277-282

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Nano-Gap Device for Liquid Sensing2004

    • Author(s)
      Satoru MORITA, Tatsuya TAKEGAWA, Takaaki HIROKANE, Shinichi URABE, Kenta ARIMA, Junichi UCHIKOSHI, Mizuho MORITA
    • Journal Title

      Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials

      Pages: 704-705

    • NAID

      10022539806

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure2004

    • Author(s)
      Satoru MORITA, Akihito SHINOZAKI, Yuuki MORITA.Kazuo NISHIMURA, Tatsuya OKAZAKI, Shinichi URABE, Nizuho MORITA
    • Journal Title

      Japanese Journal of Applied Physics 43・11B

      Pages: 7857-7860

    • NAID

      10014215132

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Reaction of Hydrogen-Desorbed Si(100) Surfaces with Water during Heating and Cooling2004

    • Author(s)
      Shinichi URABE, Kazuo NISHIMURA, Satoru MORITA, Mizuho MORITA
    • Journal Title

      Japanese Journal of Applied Physics 43・12

      Pages: 8242-8247

    • NAID

      10014216654

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary 2004 Annual Research Report
  • [Journal Article] Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure2004

    • Author(s)
      Satoru MORITA, Akihito SHINOZAKI, Yuuki MORITA, Kazuo NISHIMURA, Tatsuya OKAZAKI, Shinichi URABE, Mizuho MORITA
    • Journal Title

      Japanese Journal of Applied Physics 43(11B)

      Pages: 7857-7860

    • NAID

      10014215132

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Reaction of Hydrogen-Desorbed Si(100) Surfaces with Water during Heating and Cooling2004

    • Author(s)
      Shinichi URABE, Kazuo NISHIMURA, Satoru MORITA, Mizuho MORITA
    • Journal Title

      Japanese Journal of Applied Physics 43(12)

      Pages: 8242-8247

    • NAID

      10014216654

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure2004

    • Author(s)
      Satoru MORITA, Akihito SHINOZAKI, Yuuki MORITA, Kazuo NISHIMURA, Tasuya OKAZAKI, Shinichi URABE, Mizuho MORITA
    • Journal Title

      Extended Abstracts of 2004 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ULSI DEVICES-SCIENCE AND TECHNOLOGY

      Pages: 77-78

    • NAID

      10014215132

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Nano-Gap Device for Liquid Sensing2004

    • Author(s)
      Satoru, MORITA, Tatsuya, TAKEGAWA, Takaaki HIROKANE, Shinichi URABE, Kenta ARIMA, Junichi UCHIKOSHI, Mizuho MORITA
    • Journal Title

      Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials

      Pages: 704-705

    • NAID

      10022539806

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Tunneling Current through Ultrathin Silicon Dioxide Films under Light Exposure2004

    • Author(s)
      Satoru MORITA, Akihito SHINOZAKI, Yuuki MORITA, Kazuo NISHIMURA, Tatsuya OKAZAKI, Shinichi URABE, Mizuho MORITA
    • Journal Title

      Japanese Journal of Applied Physics 43・11B

      Pages: 7857-7860

    • NAID

      10014215132

    • Related Report
      2004 Annual Research Report
  • [Journal Article] FTIR-ATR Evaluation of Organic Contaminant Cleaning Methods for SiO_2 Surfaces2003

    • Author(s)
      Akihito SHINOZAKI, Kenta ARIMA, Mizuho MORITA, Isao KOJIMA, Yasushi AZUMA
    • Journal Title

      ANALYTICAL SCIENCES 19

      Pages: 1557-1559

    • NAID

      10012534238

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Book] 赤外線加熱工学ハンドブック 極薄シリコン酸化膜形成への応用2003

    • Author(s)
      森田瑞穂
    • Publisher
      アグネ技術センター
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Publications] Yasushi Azuma, Ruiqin Tan, Toshiyuki Fujimoto, Isao Kojima, Akihito Shinozaki, Mizuho Morita: "Uncertainties Caused by Surface Adsorbates in Estimates of the Thickness of SiO_2 Ultrathin Films"Characterization and Metrology for ULSI Technology : 2003 International Conference. 337-342 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Akihito SHINOZAKI, Kenta ARIMA, Mizuho MORITA, Isao KOJIMA, Yasushi AZUMA: "FTIR-ATR Evaluation of Organic Contaminant Cleaning Methods for SiO_2 Surfaces"ANALYTICAL SCIENCES. 19. 1557-1559 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Naoto Yoshii, Satoru Morita, Akihito Shinozaki, Minoru Aoki, Mizuho Morita: "Energy Barrier Heights of Ultra-thin Silicon Dioxide Films with Different Metal Gates"Extended Abstracts of International Workshop on Gate Insulator 2003. 96-97 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Naoto Yoshii, Satoru Morita, Akihito Shinozaki, Minoru Aoki, Mizuho Morita: "Determination of Energy Barrier Heights in MOS Diodes with Different Metal Gates"Extended Abstracts of the 9th Workshop on FORMATION CHARACTERIZATION AND RELIABILITY OF ULTRATHIN SILICON OXIDES. 313-316 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Akihito Shinozaki, Yuuki Morita, Satoru Morita, Mizuho Morita: "Oxide Thickness Dependence of Photo Currents of MOS Tunneling Diodes"Extended Abstracts of the 9th Workshop on FORMATION CHARACTERIZATION AND RELIABILITY OF ULTRATHIN SILICON OXIDES. 317-320 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] 森田瑞穂: "赤外線加熱工学ハンドブック 極薄シリコン酸化膜形成への応用"アグネ技術センター. 118-126 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Minoru Aoki, Naoto Yoshii, Kenta Arima, Mizuho Morita: "Electrical Properties of SiC Films Formed on Si by Thermal Chemical Vapour Deposition Using Monomethylsilane"ABSTRACTS, Fourth International Symposium on Control of Semiconductor Interfaces. P4-8-P4-8 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Naoto Yoshii, Satoru Morita, Akihito Shinozaki, Minoru Aoki, Mizuho Morita: "Determination of Energy Barrier Heights of Ultra-thin Silicon Dioxide Films Using Different Metal Gates"ABSTRACTS, Fourth International Symposium on Control of Semiconductor Interfaces. LP3-5-LP3-5 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Akihito SHINOZAKI, Kenta ARIMA, Mizuho MORITA, Yasushi AZUMA, Isao KOJIMA: "The Influence of Organic Contamination on Ultrathin Silicon Dioxide Film Thickness Measured by Ellipsometry"Extended Abstracts of the 8th Workshop on FORMATION CHARACTERIZATION AND RELIABILITY OF ULTRATHIN SILICON OXIDES. 233-236 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] 森勇藏, 山内和人, 芳井熊安, 安武潔, 森田瑞穂, 片岡俊彦, 遠藤勝義, 青野正和, 桑原裕司, 広瀬喜久治, 後藤英和: "究極の物づくり-原子を操る-"大阪大学出版会. 87 (2002)

    • Related Report
      2002 Annual Research Report

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Published: 2002-04-01   Modified: 2016-04-21  

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