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Study on Silicon Optical Modulator on Insulator

Research Project

Project/Area Number 14350189
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field 電子デバイス・機器工学
Research InstitutionHIROSHIMA UNIVERSITY

Principal Investigator

SUNAMI Hideo  Hiroshima University, Research Center for Nanodevices and Systems, Professor, ナノデバイス・システム研究センター, 教授 (10311804)

Co-Investigator(Kenkyū-buntansha) YOKOYAMA Shin  Hiroshima University, Research Center for Nanodevices and Systems, Professor, ナノデバイス・システム研究センター, 教授 (80144880)
Project Period (FY) 2002 – 2004
Project Status Completed (Fiscal Year 2004)
Budget Amount *help
¥14,500,000 (Direct Cost: ¥14,500,000)
Fiscal Year 2004: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2003: ¥3,000,000 (Direct Cost: ¥3,000,000)
Fiscal Year 2002: ¥9,300,000 (Direct Cost: ¥9,300,000)
KeywordsOptical modulator / SOI / Comb-shaped transistor / Free carrier / Infrared light absorption / Optical waveguide / 透明電極 / 赤外吸収 / 自由電子赤外光吸収
Research Abstract

This research is aiming to realize a silicon optical modulator based on free-carrier absorption. One of the most important key factors to realize the modulator is how much free carriers can be provided for interaction between carriers and infrared light. Thus, comb-shaped MOS transistors were developed and evaluated.
In a first trial, the optical modulation for a silicon optical modulator on SOI (silicon-on-insulator) of 1 μm in height and 1 mm in length could not be observed because that incident infrared light (wavelength, λ=1.55μm) slipped out into silicon substrate and heavily-doped polysilicon gate absorbed the light. However, multi-channel MOS transistors were successfully developed and academically proposed.
The second trial planning to solve the above issues has not brought about a successful modulation. The main cause is that the strength of noise light running through silicon substrate is more than 1000 times greater than that of signal light coming through inside silicon waveguide causing fatally bad signal-to-noise ratio.
Analyzing the experimental, it is estimated that the noise light has to be reduced to great extent. Thus, a device structure with infrared light absorption region in silicon substrate has been proposed. A trench in the substrate filled with carbon black has reduced the noise light efficiently. Another trial to realize the silicon optical modulator with improved structure has been carried out to date.

Report

(4 results)
  • 2004 Annual Research Report   Final Research Report Summary
  • 2003 Annual Research Report
  • 2002 Annual Research Report
  • Research Products

    (28 results)

All 2006 2005 2004 2003 Other

All Journal Article (20 results) Book (1 results) Publications (7 results)

  • [Journal Article] High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors2006

    • Author(s)
      H.Sunami S.Matsumura, K.Yoshikawa, K.Okuyama
    • Journal Title

      Microelectronic Engineering (in press)

    • NAID

      120000882661

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitors2006

    • Author(s)
      T.Tabei, K.Maeda, S.Yokoyama, H.Sunami
    • Journal Title

      Jpn.J.Appl.Phys., April issue (in press)

    • NAID

      10022541844

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation2005

    • Author(s)
      K.Kobayashi, T.Eto, K.Okuyama, K.Shibahara, H.Sunami
    • Journal Title

      Jpn.J.Appl.Phys. Vol.44

      Pages: 2273-2278

    • NAID

      10015703895

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitors2005

    • Author(s)
      T.Tabei, K.Maeda, S.Yokoyama, H.Sunami
    • Journal Title

      Ext.Abs.of International Symp.on Solid State Devices and Materials

      Pages: 332-333

    • NAID

      10022541844

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] High-Aspect-Ratio Structure Formation Techniques for Three-Dimensional Metal-Oxide-Semiconductor Transistors2005

    • Author(s)
      H.Sunami, K.Okuyama
    • Journal Title

      Abs.of 31^<st> Internat.Conf.on Micro-Nano-Engineering No.11 B_03

    • NAID

      120000882661

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] A Three-Dimensional MOS Transistor Formation Technique with Crystallographic Orientation-Dependent TMAH Etchant2004

    • Author(s)
      H.Sunami, T.Furukawa, T.Masuda
    • Journal Title

      SENSORS and ACTUATORS A : PHYSICAL A111

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] A High-Aspect Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation2004

    • Author(s)
      A.Katakami, K.Kobayashi, H.Sunami
    • Journal Title

      Jpn.J.Appl.Phys. Vol.43

      Pages: 2145-2150

    • NAID

      10012949618

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] An Impurity-Enhanced Oxidation Assisted Doping Profile Evaluation for Three-Dimensional and Vertical-Channel Transistors Extended2004

    • Author(s)
      K.Kobayashi, T.Eto, K.Okuyama, K.Shibahara, H.Sunami
    • Journal Title

      Ext.Abs.of International Symp.on Solid State Devices and Materials

      Pages: 208-209

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] An Experimental Analysis of 1.55-mm Infrared Light Propagation in Integrated SOI Structure2004

    • Author(s)
      M.Kawai, K.Endo, T.Tabei, H.Sunami
    • Journal Title

      Ext.Abs.of International Symp.on Solid State Devices and Materials

      Pages: 556-557

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Integrated Power Transistor Application of Three-Dimensional Sidewall-Channel MOS Transistor2004

    • Author(s)
      H.Sunami, K.Kobayashi, S.Matsumura
    • Journal Title

      Proc.the 7th Internat.Conf.on Solid-State and Integrated-Circuit Technology (ICSICT) (invited)

      Pages: 336-339

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] A Three-Dimensional MOS Transistor Formation Technique with Crystallographic Orientation-Dependent TMAH Etchant2004

    • Author(s)
      H.Sunami
    • Journal Title

      SENSORS and ACTUATORS A : PHYSICAL A111

      Pages: 310-316

    • Related Report
      2004 Annual Research Report
  • [Journal Article] A High-Aspect Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation2004

    • Author(s)
      A.Katakami
    • Journal Title

      Jpn.J.Appl.Phys. 43-4B

      Pages: 2145-2150

    • Related Report
      2004 Annual Research Report
  • [Journal Article] An Experimental Analysis of 1.55-μm Infrared Light Propagation in Integrated SOI Structure2004

    • Author(s)
      M.Kawai
    • Journal Title

      Extended Abstracts of International Symp.on Solid State Devices and Materials No.P7-1

      Pages: 556-557

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Integrated Power Transistor Application of Three-Dimensional Sidewall-Channel MOS Transistor (invited)2004

    • Author(s)
      H.Sunami
    • Journal Title

      Proc.the 7th International Conference on Solid-State and Integrated-Circuit Technology A7.3

      Pages: 336-339

    • Related Report
      2004 Annual Research Report
  • [Journal Article] A High-Aspect Ratio Silicon Gate Formation Technique for Beam-Channel MOS Transistor with Impurity-Enhanced Oxidation2003

    • Author(s)
      A.Katakami, K.Kobayashi, H.Sunami
    • Journal Title

      Jpn. J. Appl. Phys. 43

    • NAID

      10012949618

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications2003

    • Author(s)
      T.Furukawa, H.Yamashita, H.Sunami
    • Journal Title

      Jpn.J.Appl.Phys. Vol.42, Part 1

      Pages: 2067-2072

    • NAID

      80015977605

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications

    • Author(s)
      T.Furukawa, H.Yamashita, H.Sunami
    • Journal Title

      Jpn. J. Appl. Phys. 42

      Pages: 2067-2072

    • NAID

      80015977605

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Application of Arsenic Plasma Doping in Three-Dimensional MOS Transistors and the Doping Profile Evaluation

    • Author(s)
      K.Kobayashi, T.Eto, K.Okuyama, K.Shibahara, H.Sunami
    • Journal Title

      Jpn. J. Appl. Phys. 44

      Pages: 2273-2278

    • NAID

      10015703895

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors

    • Author(s)
      H.Sunami, S.Matsumura, K.Yoshikawa, K.Okuyama
    • Journal Title

      Microelectronic Engineering 2006 issue(in press)

    • NAID

      120000882661

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Journal Article] Fabrication of spin-coat optical waveguides for optically interconnected LSI and influence of fabrication process on lower layer MOS capacitors

    • Author(s)
      T.Tabei, K.Maeda, S.Yokoyama, H.Sunami
    • Journal Title

      Jpn. J. Appl. Phys. 45(in press)

    • NAID

      10022541844

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Book] VLSI工学 : 製造プロセス編2006

    • Author(s)
      角南英夫
    • Total Pages
      210
    • Publisher
      電子情報通信学会
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2004 Final Research Report Summary
  • [Publications] T Furukawa: "A Proposal of Corrugated-Channel Transistor (CCT) with Vertically-Formed Channels for Area-Conscious Applications"Jpn.J.Appl.Phys.. 42. 2067-2072 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H Sunami: "A three-dimensional MOS transistor formation technique with crystal-lographyc orientation-dependent TMAH etchant"Sensors and Actuators. A111. 310-316 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] 田部井哲夫: "SOIウェハに適した導波路構造の解析"第64回応用物理学会学術講演会講演予稿集. 30p-ZE-16. 1299-1299 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.Sunami: "Orientation-Dependent Anisotropic TMAH Etchant Applied to 3-D Silicon Nanostructure Formation"Proc. Pacific Rim Workshop on Transducers and Micro/nano Technologies. 367-372 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Furukawa: "Corrugated-Channel Transistor(CCT) for Area-Conscious Applications"Ext. Abs. of the Int. Conf. on Solid State Devices and Materials. 138-139 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.Sunami: "Fundamental Characteristics of Crystallographic Orientation-Dependent TMAH Etching and Its Application To Three-Dimensional Silicon"Sensors and Actuators A : Physical. (印刷中). (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] T.Furukawa: "A Corrugated-Channel Transistor(CCT) with Vertically-Formed Channels for Area-Conscious Applications"Jap. J. Appl. Physics. 42,4-B. 1-6 (2003)

    • Related Report
      2002 Annual Research Report

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Published: 2002-04-01   Modified: 2016-04-21  

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