Theoretical nnaalysis on control of polarization field in GaN-based quantum dot structures and improvement of lasing performance
| Project/Area Number |
14550003
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | The University of Tokyo |
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Principal Investigator |
SAITO Toshio The University of Tokyo, Center for Collaborative Research, Research Associate, 国際・産学共同研究センター, 助手 (90170513)
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| Co-Investigator(Kenkyū-buntansha) |
ARAKAWA Yasuhiko The University of Tokyo, Center for Advanced Science and Thechnology, Professor, 先端科学技術研究センター, 教授 (30134638)
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| Project Period (FY) |
2002 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥2,100,000 (Direct Cost: ¥2,100,000)
Fiscal Year 2003: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 2002: ¥1,500,000 (Direct Cost: ¥1,500,000)
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| Keywords | GaN / quantum dot / spontaneous polarization / piezoelectric polarization / strain distribution / electronic structures / semiconductor laser / oscillation performance / 半導体レーザー |
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| Research Abstract |
We have calculated electronic states of GaN quantum dots (QDs) in AIN using a polarization-potential-dependent sp^3 tight-binding method. We used a Keating-type Valence-Force-Field method for the strain distribution, and a finite-difference method for potential and electric field induced by polarization. The spontaneous and piezoelectric components of polarization are included in the present calculation. We examined a truncated-pyramidal GAN QDs with the base diameter 10.14 nm and the height 2.07nm. This dot size corresponds to that grown in our experiments. It is found that the strong electric field (max.7.14MV/cm) is induced in the QDs due to the polarization. The ground transition energy is calculated to be 3.653 eV which lies in the photon energy rage of the photoluminescence. Owing to the strong electric field, the electron wave function is pushed up toward the top, and the hole wave function is pushed down toward the bottom of the QD. The overlap between the electron and hole wave functions is decreased, and thereby the electron-hole recombination rate is reduced. (the squared overlap is 7.97x10^<-2>.) we developed programs of a l-band effective-mass model and a 8-band k・p model in order to calculate electronic states of QDs with larger sizes. Using these programs, we calculated electronic states in vertically stacked InAs QDs. Here the elastic continuum model is used for the strain distribution. We found a weak coupling between the electronic states in the stacked QDs with the dot spacing 6nm. The programs can be used for calculating electronic states in stacked GaN QDs.
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Report
(3 results)
Research Products
(22 results)
