| Project/Area Number |
14550025
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
表面界面物性
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| Research Institution | KYOTO UNIVERSITY |
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Principal Investigator |
MATSUO Jiro KYOTO UNIVERSITY, Quantum Science and Engineering Center, Assistant Professor, 工学研究科・附属量子理工学研究実験センター, 助教授 (40263123)
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| Co-Investigator(Kenkyū-buntansha) |
TAKAOKA Gikan KYOTO UNIVERSITY, Faculty of Engineering, Professor, 工学研究科・附属イオン工学実験施設, 教授 (90135525)
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| Project Period (FY) |
2002 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 2003: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 2002: ¥2,200,000 (Direct Cost: ¥2,200,000)
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| Keywords | ion / cluster / secondary ion / SIMS / simulation / many-body collision / oxygen / sputtering |
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| Research Abstract |
Secondary Ion Mass Spectrometry (SIMS) with Gas Cluster Ion Beams (GCIB) was investigated with experiments and molecular dynamics (MD) simulations. A new cluster SIMS system with high-intensity cluster ion source has been developed. Ar cluster ion beam with the average size of 2000 was utilized as a primary ion beam. The beam diameter is less than 1mm at the target position, and a current density of 10uA/cm^2 is obtained. The etch rate of Si with this current density is more than 20nm/min., which is far beyond the etch rate in recent low energy SIMS system. The secondary ion intensity linearly increases with the acceleration voltage. a threshold voltage of a few keV for secondary ion emission was found. These results are consistent with previous sputtering exveriments.
Due to the dense energy deposition in a local area with cluster ion impacts, the ion-mixing effect is heavier than the same energy per atom of Ar monomer ion. The calculated sputtering yields with Ar_<10>^+ with a kinetic energy of 100eV/atom is about 1atoms/ion, which is one order of magnitude higher than those with Ar^+ at the same energy/atom. This indicates that cluster ion beam has a great capability to be utilized as a primary ion beam in high depth resolution SIMS with short analysis time.
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