| Project/Area Number |
14550288
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Gunma university |
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Principal Investigator |
MIYAZAKI Takayuki Gunma university, Faculty of engineering, Associate Professor, 工学部, 助教授 (80110401)
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| Co-Investigator(Kenkyū-buntansha) |
OZAKI Shunji Gunma university, Faculty of engineering, Research Associate, 工学部, 助手 (80302454)
ADACHI Sadao Gunma university, Faculty of engineering, Professor, 工学部, 教授 (10202631)
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| Project Period (FY) |
2002 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥1,900,000 (Direct Cost: ¥1,900,000)
Fiscal Year 2003: ¥400,000 (Direct Cost: ¥400,000)
Fiscal Year 2002: ¥1,500,000 (Direct Cost: ¥1,500,000)
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| Keywords | reactive sputtering / nitride semiconductors / InN / GaN / optical properties / dielectric function / optical energy gap / PL spectra / 光学的性質 / 誘電率 / 分光エリプソメータ |
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| Research Abstract |
Recently, blue LED and LD were successfully achieved in the GaN based materials. The group III nitrides are today the most promising system for new photo-electronics devices. However, many points which must be clarified were remained in the material sciences and crystal growth of the group III nitrides. In fact, very recently, several researchers have reported that the bandgap of InN is not usual 1.9 eV, but may be less than 1 eV. Therefore, the usual band gap energy of 1.9 eV is doubtful. Strong photoluminescence emission (PL) was recently observed for the polycrystalline GaN layer grown on fused silica glass. Such PL property of GaN is quite different from conventional III-V semiconductors like GaAs. The same unusual properties were expected to observe in the other nitride semiconductors like InN. This work was studied about the film properties of the deposited GaN and InN by rf reactive sputtering. The results are follows.
1.Strong PL was observed for the amorphous GaN : H films in room temperature. The peak energy value is 3.27 eV.
2.The origin and luminescence mechanism of PL are not clear yet. We considered that the PL peak originate from small size crystalline GaN in the almost amorphous film.
3.The bandgap energy of InN depends on sputtering conditions. The optical properties near the bandgap energy of sputter deposited InN films should be still further studying.
4.The crystalline, electric and optical properties of InN : Si films deposited by reactive sputtering from In and Si composite targets vary largely with dependence on Si contents.
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