| Project/Area Number |
14550298
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Toyohashi University of Technology |
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Principal Investigator |
PAK Kangsa Toyohashi University of Technology, Fuculty of Engineering, Associate Professor, 工学部, 助教授 (10124736)
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| Project Period (FY) |
2002 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥3,600,000 (Direct Cost: ¥3,600,000)
Fiscal Year 2003: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 2002: ¥3,000,000 (Direct Cost: ¥3,000,000)
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| Keywords | Focused ion beam / Semiconducting gallium arsenide / Selective epitaxy / Doping / Molecular beam epitaxy / Gallium compounds / FIB / GaAs / 選択成長 / マスクレス / 化合物半導体 |
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| Research Abstract |
We introduced new growth/doping method foe selective micro-area and demonstrated in-situ maskless selective doping of compound semiconductor films using low-energy focused ion beam. This in-situ growth and doping method is thought to be essential in maskless selective device fabrication.
In this study, maskless selective growth of Sn and Be-doped GaAs films were performed using a low energy (30-200 eV)Sn and Be-Ga focused ion beam (FIB), with simultaneous irradiation of As_4 molecular beam. Selective n-type and p-type films of GaAs were grown successfully. Moreover, it was found that irradiation damages could be minimized and the surface morphology was improved using the low-energy FIB. A p-n junction was formed on n^+-typeGaAs substrate by maskless selective growth for the first time. The I-V characteristics of the sample confirmed the p-n structure. These results indicate this method would be sutable for making maskless selective micro--device fabrication.
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