| Project/Area Number |
14550319
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Tokyo Institute of Technology |
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Principal Investigator |
SAKAGUCHI Takahiro Tokyo Institute of Technology, Precision & Intelligence laboratory, Research Associate, 精密工学研究所, 助手 (70215622)
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| Co-Investigator(Kenkyū-buntansha) |
HONDA Tohru Kogakuin University, Electrical Engineering, Associate Professor, 工学部, 助教授 (20251671)
MIYAMOTO Tomoyuki Tokyo Institute of Technology, Precision & Intelligence laboratory, Associate Professor, 精密工学研究所, 助教授 (70282861)
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| Project Period (FY) |
2002 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2003: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 2002: ¥2,100,000 (Direct Cost: ¥2,100,000)
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| Keywords | GaInN Semiconductor / Blue Semiconductor Lasers / VCSELs / Current Structure / Multilayer Reflector / Epitaxy Lateral Over Growth |
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| Research Abstract |
We present the design and fabrication of highly reflective and low loss multilayer dielectric mirrors (SiO_2/ZrO_2) for GaN based vertical cavity surface emitting lasers (VCSELs). We consider two types of VCSEL structures ; one consists of AlN/GaN vertical cavity structure with a cavity length of 1.9 μm has been demonstrated. The other consists of two dielectric mirrors (SiO_2/ZrO_2) with a polished thin sapphire substrate. A resonant emission forma photo-pumped GaInN/GaInN vertical cavity with a spectral line width of 3.8 nm has been demonstrated. Also, we propose a new structure using lateral growth on dielectric Mirrors as a bottom reflector. We have demonstrated and characterized the thin GaInN/GaN 10 MQWs fabricated by removing a sapphire substrate with UV light irradiation for making a micro-cavity structure. The PL properties of standing-alone QWs show no noticeable degradation of QWs after the removing process. We pointed out the importance of the flatness of removed interfaces.
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