| Project/Area Number |
14550338
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
電子デバイス・機器工学
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| Research Institution | Daido Institute of Technology |
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Principal Investigator |
FUJIMOTO Hiroshi Daido Institute of Technology, Dept. of Informatics, Associate Professor, 情報学部, 助教授 (90075911)
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| Co-Investigator(Kenkyū-buntansha) |
WADA Takao Nagoya Sangyou University, Dept. of Industrial Information, Professor, 産業情報学部, 教授 (60023040)
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| Project Period (FY) |
2002 – 2004
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| Project Status |
Completed (Fiscal Year 2004)
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| Budget Amount *help |
¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 2004: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2003: ¥1,300,000 (Direct Cost: ¥1,300,000)
Fiscal Year 2002: ¥1,500,000 (Direct Cost: ¥1,500,000)
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| Keywords | electron irradiation / electron beam doping / impurity doping / pn junction / SIMS / photoluminescence / electron beam doping / CVD法 / pn junction / SIMS法 / BCl_3 / PCl_3 / B doping / P doping / photoluminescence / kick-out machanism / GaAs / Si / diamond |
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| Research Abstract |
Impurity atoms can be doped into semiconductor substrates by electron irradiation with considerably low energy (750 keV energy was used for the investigation). This method is named electron beam doping (EBD). In this investigation Si, GaAs, SiC and diamond were used as semiconductor substrates, and Zn, Si B and B atoms were doped into the substrates. Distribution of impurity atoms in the substrate was observed by SIMS (Secondary Ion Mass Spectrometry) after EBD. Photoluminescence (PL) was also measured for typical samples.
Electron irradiation with energy of 750 keV was carried out on every three-layer structure of GaAs/Zn//Zn/GaAs, GaAs/Si//Si/GaAs, GaAs//Si//GaAs, Si//P//Si, Si/B_6Si//Si, Si//Ge//Si, where a mark [/] denotes that an element material is deposited on the substrate by evaporation and a mark [//] denotes that a surface is in contact with other one. SIMS results showed impurity atoms were doped into all substrates.
Formation of pn junctions was confirmed on samples : the Si substrate doped with P atoms by the electron irradiation on the Si/P//P/Si structure and the Si one doped with B atoms using two-layer structure of B_4C//Si, respectively.
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