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Development of High resolution Image Processing System for Nano-scale Mesurement

Research Project

Project/Area Number 14550682
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Structural/Functional materials
Research InstitutionThe University of Tokyo

Principal Investigator

IWAMOTO Chihiro  The University of Tokyo, School of Engineering, Engineering research Institute, Research Associate, 工学部附属総合試験所, 助手 (60311635)

Project Period (FY) 2002 – 2003
Project Status Completed (Fiscal Year 2003)
Budget Amount *help
¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 2003: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2002: ¥1,700,000 (Direct Cost: ¥1,700,000)
KeywordsHigh-resolution Transmission Electron Microscopy / in-situ observation / Gallium Nitride / Boron Nitride / Silicon Nitride / Reactive Wetting
Research Abstract

In this study, we developed anew digital image recording and processing system and applied this system to in-situ high-resolution transmission electron microscopy. In this system, observed images were recorded as continuous digitalized frames and each frame were analyzed by computer. This system enabled us to get degradation-free microscope images during processing or recording. We confirmed the validity of this system to obtain the atomic image of GaN, which have very weak contrast of N atoms and 0.113 nm of interatomic distance between Ga and N atoms. Thus, we applied this system to in-situ high-resolution transmission electron microscopy and studied on the mechanical behavior of t-BN, formation mechanism of the reaction product at the reactive wetting front and crack propagation behavior of silicon nitride on an atomic scale.
In the case of the mechanical properties of t-BN film grown by ICP-CVD, it was revealed that the film has remarkable flexibility and resiliency, such tha no permanent deformation occurred when it was bent repeatedly to the minimum radius of curvature f about 4nm. In the processes of reaction between Ti-containing molten alloy and SiC substrate, TiC grew in a layer by layer mode at the spreading front, and the morphology of the spreading front depend on the chemical composition of the dissociated substrate in the molten alloy. In the study on the crack propagation behavior and fractured surface in silicon nitride, the crack propagation took place just at the interface between silicon nitride grain and intergranular glassy film. The concentration of dangling bonds at this region is the origin for the crack propagation along the interface.

Report

(3 results)
  • 2003 Annual Research Report   Final Research Report Summary
  • 2002 Annual Research Report
  • Research Products

    (24 results)

All Other

All Publications (24 results)

  • [Publications] C.Iwamoto: "Dynamic and atomistic deformation of sp^2-bonded boron nitirde nano-array"Applied Physics Letters. 83. 4402-4404 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Saito: "Multifunctional Alloys Obtained via a Dislocation-Free Plastic Deformation Mechanism"Science. 300. 464-467 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.S.Yang: "Interface engineering of cBN films deposited on silicon substrates"Journal of Applied Physics. 94. 1248-1251 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] X.H.Wang: "Ultrafast thermal plasma physical vapor deposition of thick SiC films"Science and Technology of Advanced Materials. 4. 159-165 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Saito: "Multi functional titanium alloy "GUM METAL""Materials Science Forum. 426. 681-688 (2003)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.S.Yang: "High-resolution transmission electron microscopy of as-deposited boron nitride on the edge of ultrathin Si flake"Journal of Applied Physics. 95. 2337-2341 (2004)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] C.Iwamoto, et al.: "dynamic and atomistic deformation of sp^2-bonded boron nitirde nano-array"Applied Physics Letters. Vol.83. 4402-4404 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Saito, et al.: "Multifunctional Alloys Obtained via a Dislocation-Free Plastic Deformation Mechanism"Science. Vol.300. 464-467 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.S.Yang, et al.: "Interface engineering of cBN films deposited on silicon substrates"Journal of Applied Physics. Vol.94. 1248-1251 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] Ax.h.wANG, et al.: "Ultrafast thermal plasma physical vapor deposition of thick SiC films"Science and Technology of Advanced Materials. Vol.4. 159-165 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] T.Saito, et al.: "Multi functional titanium alloy "GUM METAL""Materials Science Forum. Vol426. 681-688 (2003)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] H.S.Yang, et al.: "High-resolution transmission electron microscopy of as-depposited boronnitride on the edge of ultrathin Si flake"Journal of Applied Physics. Vol.95. 2337-2341 (2004)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2003 Final Research Report Summary
  • [Publications] C.Iwamoto: "Dynamic and atomistic deformation of sp^2-bonded boron nitride nano-array"Applied Physics Letters. 83. 4402-4404 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Saito: "Multifunctional Alloys Obtained via a Dislocation-Free Plastic Deformation Mechanism"Science. 300. 464-467 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.S.Yang: "Interface engineering of cBN films deposited on silicon substrates"Journal of Applied Physics. 94. 1248-1251 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] X.H.Wang: "Ultrafast thermal plasma physical vapor deposition of thick SiC films"Science and Technology of Advanced Materials. 4. 159-165 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] T.Saito: "Multi functional titanium alloy "GUM METAL""MATERIALS SCIENCE FORUM. 426. 681-688 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] H.S.Yang: "High-resolution transmission electron microscopy of as-deposited boron nitride on the edge of ultrathin Si flake"Journal of Applied Physics. 95. 2337-2341 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] C.Iwamoto: "Atomic structure of the GaN film grown by MBE with intermittent Indium exposure during film growth"Journal of Applied Physics. 93. 3264-3269 (2003)

    • Related Report
      2002 Annual Research Report
  • [Publications] C.Iwamoto: "Direct growth of c-BN on a mono-structured transition layer by plasma-enhanced chemical vapor deposition"Diamond and Related Materials. 11. 1854-1857 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] C.Iwamoto: "Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy"Materials Transactions. 43. 1542-1546 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.S.Yang: "High-quality cBN thin films prepared by plasma chemical vapor deposition with time-dependent biasing technique"Thin solid film. 407. 67-71 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] H.S.Yang: "Direct growth of c-BN on a mono-structured transition layer by plasma-enchanced chemical vapor deposition"Journal of Applied Physics. 91. 6695-6699 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] X.H.Wang: "High-rate deposition of nanostructured SiC films by thermal plasma PVD"Science and Technology of Advanced Materials. 3. 313-317 (2002)

    • Related Report
      2002 Annual Research Report

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Published: 2002-04-01   Modified: 2016-04-21  

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