Development of High resolution Image Processing System for Nano-scale Mesurement
| Project/Area Number |
14550682
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Structural/Functional materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
IWAMOTO Chihiro The University of Tokyo, School of Engineering, Engineering research Institute, Research Associate, 工学部附属総合試験所, 助手 (60311635)
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| Project Period (FY) |
2002 – 2003
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| Project Status |
Completed (Fiscal Year 2003)
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| Budget Amount *help |
¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 2003: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2002: ¥1,700,000 (Direct Cost: ¥1,700,000)
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| Keywords | High-resolution Transmission Electron Microscopy / in-situ observation / Gallium Nitride / Boron Nitride / Silicon Nitride / Reactive Wetting |
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| Research Abstract |
In this study, we developed anew digital image recording and processing system and applied this system to in-situ high-resolution transmission electron microscopy. In this system, observed images were recorded as continuous digitalized frames and each frame were analyzed by computer. This system enabled us to get degradation-free microscope images during processing or recording. We confirmed the validity of this system to obtain the atomic image of GaN, which have very weak contrast of N atoms and 0.113 nm of interatomic distance between Ga and N atoms. Thus, we applied this system to in-situ high-resolution transmission electron microscopy and studied on the mechanical behavior of t-BN, formation mechanism of the reaction product at the reactive wetting front and crack propagation behavior of silicon nitride on an atomic scale.
In the case of the mechanical properties of t-BN film grown by ICP-CVD, it was revealed that the film has remarkable flexibility and resiliency, such tha no permanent deformation occurred when it was bent repeatedly to the minimum radius of curvature f about 4nm. In the processes of reaction between Ti-containing molten alloy and SiC substrate, TiC grew in a layer by layer mode at the spreading front, and the morphology of the spreading front depend on the chemical composition of the dissociated substrate in the molten alloy. In the study on the crack propagation behavior and fractured surface in silicon nitride, the crack propagation took place just at the interface between silicon nitride grain and intergranular glassy film. The concentration of dangling bonds at this region is the origin for the crack propagation along the interface.
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Report
(3 results)
Research Products
(24 results)
