半導体表面上ナノ構造のフェルミオロジー

• Project/Area Number: 14702008
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: 固体物性Ⅰ(光物性・半導体・誘電体)
• Research Institution: The University of Tokyo
• Principal Investigator: 松田 巌 東京大学, 大学院・理学系研究科, 助手 (00343103)
• Project Period (FY): 2002 – 2004
• Project Status: Completed (Fiscal Year 2004)
• Budget Amount: ¥30,160,000 (Direct Cost: ¥23,200,000、Indirect Cost: ¥6,960,000); Fiscal Year 2004: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000); Fiscal Year 2003: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000); Fiscal Year 2002: ¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000)
• Keywords: フェルミオロジー / 表面 / 低次元物性 / 輸送現象 / 半導体表面 / 光電子分光 / ステップ

Research Abstract

本研究では、光電子分光によるフェルミ面マッピングの結果を元に、固体表面の低次元物性及びその電子輸送現象を調べている。本年度は、本プロジェクトで立ち上げた光電子分光装置を使用し、Si表面上Pb超薄膜やAu単原子層など様々な系のバンド及びフェルミ面のマッピングを行った。その中で自由電子的バンドを有するSi(111)/3x/3-Ag表面への一価金属(アルカリ金属、貴金属)吸着系を特に注目した。これら吸着原子は表面バンドに電子をドーピングし、またある吸着量で/21x/21周期で配列する。その結果表面電子のBragg反射により、/3x/3相では電子的だったキャリアの振る舞いが/21x/21相ではホール的になることがフェルミ面測定で分かった。このことは表面状態のホール係数が大きくなることを意味し、それを実証するために新しい磁気抵抗測定装置を立ち上げた。この測定システムは従来のマクロスコピックな表面4端子法を基に構築され、表面サンプルへ最高で6Tの磁場を印加することができる。そして測定により/3x/3から/21x/21への相転移に伴う表面ホール係数の増大を確認した。尚、表面伝導測定で同時に計測される空間電荷層は相転移に伴いホール係数は減少する。このことは本測定において、表面のホール測定を直接測定できたことを意味する。このように明確な表面状態のホール効果の測定が実現したのは、私の知る限り世界で初めてのことである。最後に、本年度をもって本プロジェクトの達成目標の一つであったサンプルの2軸回転自動制御システムが完成したことも報告する。本研究者は上記以外の系にも研究を従事し、別紙論文リストに示すように報告した。

Research Products

• [Journal Article] STM observation at initial stage of Cs adsorption on Si(111) -√3×√3-Ag surface (2005)
  • Author(s): C.Liu, I.Matsuda, S.Hasegawa
  • Journal Title: Surface and Interface Analysis 37 Pages: 101-101
• [Journal Article] Two-Dimensional Liquid-Solid Phase Transition Observed on Atomic Scale (2005)
  • Author(s): C.Liu, S.Yamazaki, R.Hobara, I.Matsuda, S.Hasegawa
  • Journal Title: Physical Review B 71
• [Journal Article] Electrical Resistance of a Monatomic Step on a Crystal Surface (2004)
  • Author(s): I.Matsuda, M.Ueno, T.Hirahara, R.Hobara, H.Morikawa, S.Hasegawa
  • Journal Title: Physical Review Letters 93 Pages: 236801-236801
• [Journal Article] Surface-state electrical conductivity at a metal-insulator transition on silicon (2004)
  • Author(s): T.Tanikawa, I.Matsuda, T.Kanagawa, S.Hasegawa
  • Journal Title: Physical Review Letters 93 Pages: 16801-16801
• [Journal Article] Non-metallic transport of a quasi-one-dimensional metallic Si(557)-Au surface (2004)
  • Author(s): H.Okino, R.Hobara, I.Matsuda, T.Kanagawa, S.Hasegawa
  • Journal Title: Physical Review B 70 Pages: 113404-113404
• [Journal Article] Direct observation of soliton dynamics in charge density waves on a quasi-one-dimensional metallic surface (2004)
  • Author(s): H.Morikawa, I.Matsuda, S.Hasegawa
  • Journal Title: Physical Review B 70 Pages: 85412-85412
• [Journal Article] The effective mass of a free-electron-like surface state of the Si(111)√3×√3-Ag investigated by photoemission and scanning tunneling spectroscopies (2004)
  • Author(s): T.Hirahara, I.Matsuda, M.Ueno, S.Hasegawa
  • Journal Title: Surface Science 563 Pages: 191-191
• [Journal Article] Electronic Transport in Multiwalled Carbon Nanotubes Contacted with Patterned Electrodes (2004)
  • Author(s): R.Hobara, S.Yoshimoto, T.Ikuno, M.Katayama, N.Yamauchi, W.Wongwiriyapan, S.Honda, I.Matsuda, S.Hasegawa
  • Journal Title: Japanese Journal of Applied Physics 43
  • NAID: 10013469149
• [Journal Article] Photoemission Structure Factor Effect for Fermi Rings of the Si(111)√3 × √3-Ag Surface (2004)
  • Author(s): T.Hirahara, I.Matsuda, S.Hasegawa
  • Journal Title: e-Journal of Surface Science and Nanotechnology 2 Pages: 141-141
  • NAID: 130004438912
• [Journal Article] Successive Phase Transitions Induced by Ca and Sr Adsorptions on a Si(111) surface (2004)
  • Author(s): F.Shimokoshi, I.Matsuda, S.Hasegawa, S.Ino
  • Journal Title: e-Journal of Surface Science and Nanotechnology 2 Pages: 178-178
  • NAID: 130004933857
• [Journal Article] Quantum-Well States in Ultra-Thin Metal Films on Semiconductor Surfaces (2004)
  • Author(s): I.Matsuda, T.Tanikawa, S.Hasegawa, H.W.Yeom, K.Tono, T.Ohta
  • Journal Title: e-Journal of Surface Science and Nanotechnology 2 Pages: 169-169
  • NAID: 130004933856
• [Journal Article] シリコン表面上での電荷密度波の格子整合効果とソリトンダイナミクス (2004)
  • Author(s): 守川春雲, 松田巌, 長谷川修司
  • Journal Title: 表面科学 25 Pages: 407-407
  • NAID: 10013275262
• [Journal Article] Long-periodic modulations in the linear chains of TI atoms on Si(100)
  • Author(s): A.A.Saranin, A.V.Zotov, I.A.Kuyanov, V.G.Kotlyar, M.Kishida, Y.Murata, H.Okada, I.Matsuda, H.Morikawa, N.Miyata, S.Hasegawa, M.Katayama, K.Oura
  • Journal Title: Physical Review B (In press)
• [Journal Article] Evolution of Fermi surface by electron doping into a free-electron-like surface state
  • Author(s): I.Matsuda, T.Hirahara, M.Konishi, C.Liu, H.Morikawa, M.D'angelo, S.Hasegawa
  • Journal Title: Physical Review B (accepted)
• [Publications] I.Matsuda, H.Morikawa, C.Liu, S.Ohuchi, S.Hasegawa, T.Okuda, T.Kinoshita, C.Ottaviani, A.Cricenti, M.D'angelo, P.Soukiassian, G.L.Lay: "An electronic evidence of asymmetry in the Si(111)√3x√3-Ag structure"Physical Review B. 68. 085407 (2003)
• [Publications] I.Matsuda, M.Hengsberger, F.Baumberger, T.Greber, H.W.Yeom, J.Osterwalder: "Reinvestigation of the band structure of the Si(111)5x2 Au surface"Physical Review B. 68. 195319 (2003)
• [Publications] M.Ueno, I.Matsuda, C.Liu, S.Hasegawa: "Step edges as reservoirs of adatom gas on a surface"Japanese Journal of Applied Physics. 42. 4894 (2003)
• [Publications] 上野将司, 松田巌, 劉燦華, 原沢あゆみ, 奥田太一, 木下豊彦, 長谷川修司: "表面上の2次元吸着原子ガス相と内殻光電子分光"表面科学(Journal of the surface science society of Japan). 24. 556 (2003)
• [Publications] T.Tanikawa, I.Matsuda, R.Hobara, S.Hasegawa: "Variable-temperature micro-four-point probe method for surface electrical conductivity measurements in ultrahigh vacuum"e-Journal of Surface Science and Nanotechnology. 1. 50 (2003)
• [Publications] T.Kanagawa, R.Hobara, I.Matsuda, T.Tanikawa, A.Natori, S.Hasegawa: "Anisotropy in conductance of a quasi-one-dimensional metallic surface state measured by square micro-four-point probe method"Physical Review Letters. 91. 036805 (2003)
• [Publications] T.Tanikawa, K.Yoo, I.Matsuda, S.Hasegawa, Y.Hasegawa: "Non-Metallic Transport Property of the Si(111) 7×7 Surface"Physical Review B. 68. 113303 (2003)
• [Publications] H.W.Yeom, J.W.Kim, K.Tono, I.Matsuda, T.Ohta: "Electronic structure of the monolayer and double-layer Ge on Si(001)"Physical Review B. 67. 085310 (2003)
• [Publications] C.Liu, I.Matsuda, H.Morikawa, T.Okuda, T.Kinoshita, S.Hasegawa: "Si(111)√21√21-(Ag,Cs) surface studied by Scanning Tunneling Microscopy and angle-resolved photoemission spectroscopy"Japanese Journal of Applied Physics. 42. 4659 (2003)
• [Publications] H.Okino, I.Matsuda, T.Tanikawa, S.Hasegawa: "Formation of Facet Structures by Au Adsorption on Vicinal Si(111) Surfaces"e-Journal of Surface Science and Nanotechnology. 1. 84 (2003)
• [Publications] S.Hasegawa, I.Shiraki, F.Tanabe, R.Hobara, T.Kanagawa, T.Tanikawa, I.Matsuda, C.L.Petersen, T.M.Hansen, P.Boggild, F.Grey: "Electrical conduction through surface superstructures measured by microscopic four-point probes"Surface Review and Letters. 10. 963 (2003)
• [Publications] 長谷川修司, 白木一郎, 田邊輔仁, 保原麗, 金川泰三, 松田巌: "4探針STMの開発と表面電子輸送の測定"電子顕微鏡. 38. 36 (2002)
• [Publications] I.Matsuda, T.Ohta, H.W.Yeom: "In-plane dispersion of the quantum-well states of the epitaxial silver films on silicon"Physical Review B. 65. 085327 (2002)
• [Publications] I.Matsuda, H.W.Yeom: "The study of the quantum-well states in the ultra-thin silver film on the Si surface"Journal of Electron Spectroscopy and Related Phenomena. 126. 101 (2002)
• [Publications] 松田巌, H.W.Yeom, 谷川雄洋, 登野健介, 長谷川修司, 太田俊明: "半導体表面上金属超薄膜の量子井戸状態の研究"表面科学. 23. 43 (2002)
• [Publications] H.Morikawa, I.Matsuda, S.Hasegawa: "STM observation of Si(111)-α-√3×√3-Sn at low temperature"Physical Review B. 65. 201308(R) (2002)
• [Publications] G.LeLay, A.Cricenti, C.Ottaviani, P.Perfetti, T.Tanikawa, I.Matsuda, S.Hasegawa: "Evidence of asymmetric dimers down to 40 K at the clean Si(100) surface"Physical Review B. 66. 153317 (2002)
• [Publications] 長谷川修司, 白木一郎, 田辺輔仁, 保原麗, 金川泰三, 谷川雄洋, 松田巌, C.L.Petersen, T.M.Hanssen, P.Boggild, Francois Grey: "ミクロな4端子プローブによる表面電気伝導の測定"表面科学. 23. 740 (2002)
• [Publications] S.Hasegawa, I.Shiraki, F.Tanabe, R.Hobara, T.Kanagawa, T.Tanikawa, I.Matsuda, C.L.Petersen, T.M.Hansen, P.Boggild, F.Grey: "Electrical conduction through surface superstructures measured by microscopic four-point probes"Surface Review and Letters. (in printing)(発表予定). (2003)
• [Publications] C.Liu, I.Matsuda, H.Morikawa, T.Okuda, T.Kinoshita, S.Hasegawa: "Si(111) √21×√21-(Ag,Cs) surface studied by Scanning Tunneling Microscopy and angle-resolved photoemission spectroscopy"Japanese Journal of Applied Physics. (accepted)(発表予定). (2003)
• [Publications] H.W.Yeom, J.W.Kim, K.Tono, I.Matsuda, T.Ohta: "Electronic structure of the monolayer and double-layer Ge on Si(001)"Physical Review B. (accepted)(発表予定). (2003)
• [Publications] 長谷川修司, 白木一郎, 田邊輔仁, 保原麗, 金川泰三, 松田巌: "4探針STMの開発と表面電子輸送の測定"電子顕微鏡. 65(in printing). 201308(R) (2002)
• [Publications] M.Ueno, I.Matsuda, C.Liu, S.Hasegawa: "Step edges as reservoirs of adatom gas on a surface"Japanese Journal of Applied Physics. (accepted)(発表予定). 153317 (2003)