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欠陥エンジニアリングによる非鉛強誘電・圧電材料の創製

Research Project

Project/Area Number 14703013
Research Category

Grant-in-Aid for Young Scientists (A)

Allocation TypeSingle-year Grants
Research Field Inorganic materials/Physical properties
Research InstitutionThe University of Tokyo

Principal Investigator

野口 祐二  東京大学, 先端科学技術研究センター, 講師 (60293255)

Project Period (FY) 2002 – 2004
Project Status Completed (Fiscal Year 2004)
Budget Amount *help
¥26,390,000 (Direct Cost: ¥20,300,000、Indirect Cost: ¥6,090,000)
Fiscal Year 2004: ¥5,980,000 (Direct Cost: ¥4,600,000、Indirect Cost: ¥1,380,000)
Fiscal Year 2003: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
Fiscal Year 2002: ¥11,440,000 (Direct Cost: ¥8,800,000、Indirect Cost: ¥2,640,000)
Keywords地球環境 / 電子材料 / 鉛 / 強誘電体 / 圧電体 / 格子欠陥 / 残留分極 / 材料設計 / 結晶構造 / 抗電界 / ビスマス層状構造強誘電体 / 空孔 / 第一原理電子状態計算 / 非鉛 / 残中分極 / 酸素空孔 / 陽イオン空孔
Research Abstract

近年,地球環境の悪化が急速に進行する中で、より高機能かつ環境負荷が小さい新材料の開発が急務であり,緊急な課題として認識されている.様々な電子機器に搭載されているチタン酸ジルコン酸鉛(PZT)は,有害な鉛を含んでいるにも関わらず,代替可能な強誘電体が無いという理由で,現在もなお使用され続けている.ドーピングや固溶体の形成など,既存の科学技術に立脚した材料設計の延長では限界があることから、電子・原子スケールでの局所構造や秩序性・次元性を考慮した新たな材料設計による非鉛強誘電体の創成が強く望まれている。本研究では,層状強誘電体に秩序構造をもつ格子欠陥を導入するという新規な材料設計指針「欠陥エンジニアリング」を提案し,残留分極値(P_r)の飛躍的な向上(従来の7倍のP_r=49μC/cm^2)と巨大な残留分極をもつ新規材料の開発(非鉛ペロブスカイトで世界最高値P_r=52μC/cm^2)に成功した.格子欠陥を、電子・原子レベルでの局所構造を考慮して積極的に導入・利用する欠陥エンジニアリング(本申請者が提案)により、非鉛系でPZTに匹敵する分極特性が初めて得られた。
従来,誘電体の格子欠陥は,弾性波の減衰や漏れ電流の増大をもたらすことがあるため,特性に悪影響を及ぼすイメージが強かった.本研究では、格子欠陥を積極的に導入・利用する独創的な欠陥エンジニアリングにより新規強誘電体をした。この成果により非鉛系強誘電体のブレークスルーがもたらされ,環境調和社会へ大きなインパクトを与えると思われる。本研究により開発された新規強誘電体は、PZTが用いられているかなりの部分を代替できる可能性を秘めており、地球環境向上のための世界的なニーズに大きく貢献するであろう。

Report

(3 results)
  • 2004 Annual Research Report
  • 2003 Annual Research Report
  • 2002 Annual Research Report
  • Research Products

    (19 results)

All 2005 2004 Other

All Journal Article (6 results) Book (1 results) Publications (12 results)

  • [Journal Article] Enhanced spontaneous polarization in superlattice-structured Bi_4Ti_3O_<12>-BaBi_4Ti_4O_<15> single crystals2005

    • Author(s)
      T.Kobayashi, Y.Noguchi, M.Miyayama
    • Journal Title

      Applied Physics Letters 86・1

      Pages: 12907-12907

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Correlation between displacive-type ferroelectricity and electronic density of states near the Fermi level in SrBi_2Ta_2O_92004

    • Author(s)
      M.Hidaka, M.Soejima, Y.Noguchi, M.Miyayama
    • Journal Title

      physica status solidi (b) 242・4

      Pages: 899-908

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Estimation of ionic and hole conductivity in bismuth titanate polycrystals at high temperatures2004

    • Author(s)
      M.Takahashi, Y.Noguchi, M.Miyayama
    • Journal Title

      Solid State Ionics 172・1-4

      Pages: 325-329

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Cation-vacancy-induced low coercive field in La-modified SrBi_2Ta_2O_92004

    • Author(s)
      Y.Noguchi, M.Miyayama, K.Oikawa, T.Kamiyama
    • Journal Title

      Journal of Applied Physics 95・8

      Pages: 4261-4266

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Chemical bonding and electronic states in α-PbO : Analysis by an ab initio band calculation2004

    • Author(s)
      Y.Noguchi, M.Takahashi, M.Miyayama
    • Journal Title

      Journal of the Ceramic Society of Japan 112・1

      Pages: 50-56

    • NAID

      110002288162

    • Related Report
      2004 Annual Research Report
  • [Journal Article] Domain structure and polarization properties of lanthanum-substituted bismuth titanate single crystals2004

    • Author(s)
      M.Soga, Y.Noguchi, M.Miyayama
    • Journal Title

      Applied Physics Letters 84・1

      Pages: 100-102

    • NAID

      130006968702

    • Related Report
      2004 Annual Research Report
  • [Book] 表面・界面工学大系、第四章第四節「原子配列と電子状態」2005

    • Author(s)
      野口 祐二
    • Publisher
      (株)フジテクノシステム(印刷中)
    • Related Report
      2004 Annual Research Report
  • [Publications] Atsushi Kitamura, Yuji Noguchiら: "Polarization Properties of Praseodymium-modified SrBi_2Ta_2O_9 Thin Film prepared by Sol-Gel Method"Materials Letters. 58・11. 1815-1818 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Yuji Noguchiら: "Chemical bonding and eletronic states in α-PbO : Analysis by an ab initio band calculation"Journal of the Ceramic Society of Japan. 112・1. 50-56 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Masayuki Soga, Yuji Noguchiら: "Domain structure and polarization properties of lanthanum-substituted bismuth titanate single crystals"Applied Physics Letters. 84・1. 100-102 (2004)

    • Related Report
      2003 Annual Research Report
  • [Publications] Yuji Noguchiら: "Praseodymium-Modified SrBi_2Ta_2O_9 with Improved Polarization Properties at Low Electric Field"Journal of Applied Physics. 94・10. 6749-6752 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Tohru Higuchi, Yoshiyuki Moriuchi, Yuji Noguchiら: "Electronic Stuctures of Bi_<4-x>La_xTi_3O_<12> and Bi_4Zr_xTi_<3-x>O_<12> Single Crystals Studied by soft-X-Ray Spectroscopy"Japanese Journal of Applied Physics. 42・9B. 6226-6229 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Masatake Takahshi, Yuji Noguchiら: "Effects V-Doping on Mixed Conduction Properties of Bismuth Titanate Single Crystals"Japanese Journal of Applied Physics. 42・9B. 6222-6225 (2003)

    • Related Report
      2003 Annual Research Report
  • [Publications] Yuji Noguchi: "Defect Engineering for Control of Polarization Properties in SrBi_2Ta_2O_9"Japanese Journal of Applied Physics. 41(11B). 7062-7075 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Yu Goshima: "Dielectric and Ferroelectric Anisotropy of Intergrowth Bi_4Ti_3O_<12>-PbBi_4Ti_4O_<15> Single Crystals"Applied Physics Letters. 81(12). 2226-2228 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Yuji Noguchi: "Effect of Pb Substitution on the Ferroelectric Properties of SrBi_2Ta_2O_9"Journal of the Ceramics Society of Japan. 110(11). 995-1000 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Masatake Takahashi: "Electrical Conduction Mechanism in Bi_4Ti_3O_<12> Single Crystal"Japanese Journal of Applied Physics. 41(11B). 7053-7056 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Takayuki Watanabe: "Effect of Co-substitution of La and V in Bi_4Ti_3O_<12> Thin Films on the Low Temperature Deposition"Applied Physics Letters. 80(1). 100-102 (2002)

    • Related Report
      2002 Annual Research Report
  • [Publications] Takayuki Watanabe: "Preparation and Characterization of a-and b-axis-oriented Epitaxially Grown Bi_4Ti_3O_<12>-based Thin Films with Long-range Lattice Matching"Applied Physics Letters. 81(9). 1660-1662 (2002)

    • Related Report
      2002 Annual Research Report

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Published: 2002-04-01   Modified: 2016-04-21  

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