| Project/Area Number |
14F04357
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 外国 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Tohoku University |
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Principal Investigator |
吹留 博一 東北大学, 電気通信研究所, 准教授 (10342841)
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| Co-Investigator(Kenkyū-buntansha) |
VENUGOPAL GUNASEKARAN 東北大学, 電気通信研究所, 外国人特別研究員
VENUGOPAL Gunasekaran 東北大学, 電気通信研究所, 外国人特別研究員
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| Project Period (FY) |
2014-04-25 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2016: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2015: ¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2014: ¥300,000 (Direct Cost: ¥300,000)
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| Keywords | graphene / spintronics / グラフェン / スピントロニクス / 磁気デバイス |
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| Outline of Annual Research Achievements |
Spintronics is one of the most exciting and challenging areas in nanotechnology, important to both fundamental scientific research and industrial applications. Nowadays, microelectronic devices continue to diminish in size to achieve higher speeds. As this shrinkage occurs, design parameters are impacted in such a way that the materials in current use are pushed to their limits. To keep the rate of device shrinkage and still maintain overall performance goals, the data storage capacity will eventually reach a natural performance limit even with some technical innovations. With the limits of microelectronic miniaturization in sight there has been an enormous drive to innovate radically new materials and technologies in order to match the continued expansion of the world economy and to meet the insatiable demands of the world microprocessor market. This project therefore aims at development of novel Giant Magneto-Resistive (GMR) devices with GMR ratio exceeding by few orders of magnitudes of spintronic materials;
2D materials, such as MoS2 and WSe2 are expected to be promising as good candidates to transfer spin. Therefore,I have stuided these materials. I have successfully fabricated few-layer MoS2 transistors. Furthermore, to acquire detailed information on the device physics of these transistor, I have performed operando soft x-ray spectromicroscopy. As a result, the electronic states were found to be modulated through many-body effects.
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| Research Progress Status |
28年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
28年度が最終年度であるため、記入しない。
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