| Budget Amount *help |
¥1,200,000 (Direct Cost: ¥1,200,000)
Fiscal Year 2015: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2014: ¥700,000 (Direct Cost: ¥700,000)
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| Outline of Annual Research Achievements |
The main purpose of this research is to study the photovoltaic effect of InGaN/GaN-based nanowire solar cells. To grow GaN core nanostructures, selective area growth was used, thereby resulting in GaN nanowires with high aspect ratio and high quality. Afterwards, the research has been focused on the growth of InGaN shell structures acting as an light absorption layer. To characterize the emission properties of grown core-shell InGaN nanowires, several kinds of spacial high-resolution methods have been used such as TEM and CL. Based-on these results, we have reported five joural papers and six international conferences. These publications cover the advanced growth technology to obtain high quality of GaN nanorods not only with MOCVD but also with other epitaxy tools such as MBE and HVPE. Indeed, extensive trials have been made to find the appropriate growth condition for growing uniform GaN nanowire. To find the feasiblity of the growth on novel materials, several kinds of substancs were attempted such as sapphire, silicon, and silica substrates. The emission characteristics of InGaN shells indirectly reflected the absorption properties of InGaN core-shell nanowires. Furthermore, a simulation based on the experimental resutls showed more promise potential of InGaN core-shell nanowwire solar cells. Thus, we believe that this study will really contribute to the development of high effiecicy nanowire solar cell in the near future.
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