| Project/Area Number |
14F04777
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 外国 |
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| Research Field |
Device related chemistry
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| Research Institution | The University of Tokyo |
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Principal Investigator |
竹谷 純一 東京大学, 新領域創成科学研究科, 教授 (20371289)
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| Co-Investigator(Kenkyū-buntansha) |
HAEUSERMANN ROGER 東京大学, 新領域創成科学研究科, 外国人特別研究員
HAEUSERMANN Roger 東京大学, 新領域創成科学研究科, 外国人特別研究員
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| Project Period (FY) |
2014-04-25 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2015: ¥800,000 (Direct Cost: ¥800,000)
Fiscal Year 2014: ¥300,000 (Direct Cost: ¥300,000)
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| Keywords | 有機エレクトロニクス / 半導体 / フレキシブルエレクトロニクス / 集積回路 / 電界効果トランジスタ / 接触抵抗 / 電荷注入 / 電気特性変動シミュレーション |
|---|
| Outline of Annual Research Achievements |
Charge injection from the metal into the semiconductor is a crucial step in every device using organic semiconductors. Understanding this process is necessary to further improve device performance. In the last year, we analyzed a about 20 transistors with a very distinct charge injection problem. By combining these results with a self developed drift diffusion solver we have been able to explain some of these results. Further implementation of physical processes, allowed us to explain the observed injection behavior.
Starting from these models, we have developed a simplified version, which can be solved analytically. This model has been implemented into a SPICE simulation package. The first Investigations have been very promising.
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| Research Progress Status |
27年度が最終年度であるため、記入しない。
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| Strategy for Future Research Activity |
27年度が最終年度であるため、記入しない。
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